DE3400197C2 - - Google Patents
Info
- Publication number
- DE3400197C2 DE3400197C2 DE19843400197 DE3400197A DE3400197C2 DE 3400197 C2 DE3400197 C2 DE 3400197C2 DE 19843400197 DE19843400197 DE 19843400197 DE 3400197 A DE3400197 A DE 3400197A DE 3400197 C2 DE3400197 C2 DE 3400197C2
- Authority
- DE
- Germany
- Prior art keywords
- conductor
- semiconductor device
- cathode
- electrode
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 30
- 238000005452 bending Methods 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 description 10
- 238000003825 pressing Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
- Y10T29/49208—Contact or terminal manufacturing by assembling plural parts
- Y10T29/49218—Contact or terminal manufacturing by assembling plural parts with deforming
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Thyristors (AREA)
- Die Bonding (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58009129A JPS59134876A (ja) | 1983-01-20 | 1983-01-20 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3400197A1 DE3400197A1 (de) | 1984-07-26 |
| DE3400197C2 true DE3400197C2 (en:Method) | 1991-04-25 |
Family
ID=11712013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3400197A Granted DE3400197A1 (de) | 1983-01-20 | 1984-01-04 | Halbleitereinrichtung |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4556898A (en:Method) |
| JP (1) | JPS59134876A (en:Method) |
| DE (1) | DE3400197A1 (en:Method) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6223167A (ja) * | 1985-07-24 | 1987-01-31 | Hitachi Ltd | 半導体装置 |
| JPS6279669A (ja) * | 1985-10-03 | 1987-04-13 | Mitsubishi Electric Corp | 半導体装置 |
| JP2594278B2 (ja) * | 1986-07-30 | 1997-03-26 | ビービーシー ブラウン ボヴェリ アクチェンゲゼルシャフト | 加圧接続型ｇｔｏサイリスタ |
| EP0366916B1 (en) * | 1988-10-04 | 1995-06-14 | Kabushiki Kaisha Toshiba | Shorted-anode semiconductor device and methods of making the same |
| DE102004025082B4 (de) * | 2004-05-21 | 2006-12-28 | Infineon Technologies Ag | Elektrisch und durch Strahlung zündbarer Thyristor und Verfahren zu dessen Kontaktierung |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1087706B (de) * | 1956-09-24 | 1960-08-25 | Siemens Ag | Flaechengleichrichteranordnung und Verfahren zu ihrer Herstellung |
| AT234842B (de) * | 1961-07-12 | 1964-07-27 | Siemens Ag | In ein Gehäuse eingeschlossene Halbleiteranordnung |
| US3396316A (en) * | 1966-02-15 | 1968-08-06 | Int Rectifier Corp | Compression bonded semiconductor device with hermetically sealed subassembly |
| DE2039806C3 (de) * | 1970-08-11 | 1975-05-07 | Brown, Boveri & Cie Ag, 6800 Mannheim | Halbleiterbauelement mit Druckkontakten |
| US4127863A (en) * | 1975-10-01 | 1978-11-28 | Tokyo Shibaura Electric Co., Ltd. | Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast |
| DE2556749A1 (de) * | 1975-12-17 | 1977-06-23 | Bbc Brown Boveri & Cie | Leistungshalbleiterbauelement in scheibenzellenbauweise |
| FR2378354A1 (fr) * | 1977-01-19 | 1978-08-18 | Alsthom Atlantique | Procede de fabrication de semiconducteurs de puissance a contacts presses |
| JPS5929143B2 (ja) * | 1978-01-07 | 1984-07-18 | 株式会社東芝 | 電力用半導体装置 |
| DE2821268C2 (de) * | 1978-05-16 | 1986-10-16 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement mit Druckkontakt |
| JPS55121654A (en) * | 1979-03-13 | 1980-09-18 | Toshiba Corp | Compression bonded semiconductor device |
| DE2936780C2 (de) * | 1979-09-12 | 1985-02-07 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterbauelement |
| US4394678A (en) * | 1979-09-19 | 1983-07-19 | Motorola, Inc. | Elevated edge-protected bonding pedestals for semiconductor devices |
| JPS57181131A (en) * | 1981-04-30 | 1982-11-08 | Toshiba Corp | Pressure-contact type semiconductor device |
-
1983
- 1983-01-20 JP JP58009129A patent/JPS59134876A/ja active Pending
- 1983-12-27 US US06/565,740 patent/US4556898A/en not_active Expired - Lifetime
-
1984
- 1984-01-04 DE DE3400197A patent/DE3400197A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3400197A1 (de) | 1984-07-26 |
| US4556898A (en) | 1985-12-03 |
| JPS59134876A (ja) | 1984-08-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |