DE3332481A1 - Halbleiterspeicher - Google Patents

Halbleiterspeicher

Info

Publication number
DE3332481A1
DE3332481A1 DE19833332481 DE3332481A DE3332481A1 DE 3332481 A1 DE3332481 A1 DE 3332481A1 DE 19833332481 DE19833332481 DE 19833332481 DE 3332481 A DE3332481 A DE 3332481A DE 3332481 A1 DE3332481 A1 DE 3332481A1
Authority
DE
Germany
Prior art keywords
circuit
selection
semiconductor memory
output terminals
sense amplifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19833332481
Other languages
German (de)
English (en)
Inventor
Yasunori Tachikawa Tokyo Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3332481A1 publication Critical patent/DE3332481A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
DE19833332481 1982-09-10 1983-09-08 Halbleiterspeicher Withdrawn DE3332481A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57156662A JPS5948889A (ja) 1982-09-10 1982-09-10 Ｍｏｓ記憶装置

Publications (1)

Publication Number Publication Date
DE3332481A1 true DE3332481A1 (de) 1984-03-15

Family

ID=15632554

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833332481 Withdrawn DE3332481A1 (de) 1982-09-10 1983-09-08 Halbleiterspeicher

Country Status (6)

Country Link
JP (1) JPS5948889A (ja)
KR (1) KR840005884A (ja)
DE (1) DE3332481A1 (ja)
FR (1) FR2533061A1 (ja)
GB (1) GB2127246B (ja)
IT (1) IT1167386B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4018979A1 (de) * 1989-06-13 1991-01-03 Toshiba Kawasaki Kk Dynamischer randomspeicher mit verbesserter leseverstaerkerschaltung

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61104395A (ja) * 1984-10-22 1986-05-22 Nec Ic Microcomput Syst Ltd ダイナミック型半導体記憶装置
JPS6364695A (ja) * 1986-09-04 1988-03-23 Fujitsu Ltd 半導体集積回路
JPH07118193B2 (ja) * 1986-09-18 1995-12-18 富士通株式会社 半導体記憶装置
JPH07107797B2 (ja) * 1987-02-10 1995-11-15 三菱電機株式会社 ダイナミツクランダムアクセスメモリ
KR910009551B1 (ko) * 1988-06-07 1991-11-21 삼성전자 주식회사 메모리장치의 센스앰프 분할 제어회로
KR940007639B1 (ko) * 1991-07-23 1994-08-22 삼성전자 주식회사 분할된 입출력 라인을 갖는 데이타 전송회로
KR0179097B1 (ko) * 1995-04-07 1999-04-15 김주용 데이타 리드/라이트 방법 및 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4061954A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
DE2743662A1 (de) * 1977-09-28 1979-04-05 Siemens Ag Ein-transistor-speicherelement und verfahren zu seiner herstellung
DE3219379A1 (de) * 1981-05-26 1982-12-23 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4241425A (en) * 1979-02-09 1980-12-23 Bell Telephone Laboratories, Incorporated Organization for dynamic random access memory
JPS5616992A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Signal readout circuit
JPS6027119B2 (ja) * 1980-04-22 1985-06-27 株式会社東芝 半導体メモリ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4061954A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
DE2743662A1 (de) * 1977-09-28 1979-04-05 Siemens Ag Ein-transistor-speicherelement und verfahren zu seiner herstellung
DE3219379A1 (de) * 1981-05-26 1982-12-23 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Halbleitervorrichtung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4018979A1 (de) * 1989-06-13 1991-01-03 Toshiba Kawasaki Kk Dynamischer randomspeicher mit verbesserter leseverstaerkerschaltung
DE4018979C2 (de) * 1989-06-13 1998-05-14 Toshiba Kawasaki Kk Halbleiter-Speichervorrichtung mit verbesserter Leseverstärkerschaltung

Also Published As

Publication number Publication date
GB2127246B (en) 1985-12-11
IT1167386B (it) 1987-05-13
IT8322792A1 (it) 1985-03-06
IT8322792A0 (it) 1983-09-06
GB2127246A (en) 1984-04-04
GB8317749D0 (en) 1983-08-03
KR840005884A (ko) 1984-11-19
FR2533061A1 (fr) 1984-03-16
JPS5948889A (ja) 1984-03-21

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Legal Events

Date Code Title Description
OR8 Request for search as to paragraph 43 lit. 1 sentence 1 patent law
8105 Search report available
8128 New person/name/address of the agent

Representative=s name: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBE

8141 Disposal/no request for examination