|
US4617246A
(en)
*
|
1982-11-04 |
1986-10-14 |
Canon Kabushiki Kaisha |
Photoconductive member of a Ge-Si layer and Si layer
|
|
US4569894A
(en)
*
|
1983-01-14 |
1986-02-11 |
Canon Kabushiki Kaisha |
Photoconductive member comprising germanium atoms
|
|
JPS59193463A
(ja)
*
|
1983-04-18 |
1984-11-02 |
Canon Inc |
電子写真用光導電部材
|
|
US4532198A
(en)
*
|
1983-05-09 |
1985-07-30 |
Canon Kabushiki Kaisha |
Photoconductive member
|
|
DE3420741C2
(de)
*
|
1983-06-02 |
1996-03-28 |
Minolta Camera Kk |
Elektrophotographisches Aufzeichnungsmaterial
|
|
US4609604A
(en)
*
|
1983-08-26 |
1986-09-02 |
Canon Kabushiki Kaisha |
Photoconductive member having a germanium silicon photoconductor
|
|
US4585719A
(en)
*
|
1983-09-05 |
1986-04-29 |
Canon Kabushiki Kaisha |
Photoconductive member comprising (SI-GE)-SI and N
|
|
US4592983A
(en)
*
|
1983-09-08 |
1986-06-03 |
Canon Kabushiki Kaisha |
Photoconductive member having amorphous germanium and amorphous silicon regions with nitrogen
|
|
US4592979A
(en)
*
|
1983-09-09 |
1986-06-03 |
Canon Kabushiki Kaisha |
Photoconductive member of amorphous germanium and silicon with nitrogen
|
|
US4600671A
(en)
*
|
1983-09-12 |
1986-07-15 |
Canon Kabushiki Kaisha |
Photoconductive member having light receiving layer of A-(Si-Ge) and N
|
|
US4595644A
(en)
*
|
1983-09-12 |
1986-06-17 |
Canon Kabushiki Kaisha |
Photoconductive member of A-Si(Ge) with nonuniformly distributed nitrogen
|
|
US4592981A
(en)
*
|
1983-09-13 |
1986-06-03 |
Canon Kabushiki Kaisha |
Photoconductive member of amorphous germanium and silicon with carbon
|
|
US4579797A
(en)
*
|
1983-10-25 |
1986-04-01 |
Canon Kabushiki Kaisha |
Photoconductive member with amorphous germanium and silicon regions, nitrogen and dopant
|
|
US4595645A
(en)
*
|
1983-10-31 |
1986-06-17 |
Canon Kabushiki Kaisha |
Photoconductive member having a-Ge and a-Si layers with nonuniformly distributed oxygen
|
|
US4592982A
(en)
*
|
1983-11-04 |
1986-06-03 |
Canon Kabushiki Kaisha |
Photoconductive member of layer of A-Ge, A-Si increasing (O) and layer of A-Si(C) or (N)
|
|
US4601964A
(en)
*
|
1983-12-29 |
1986-07-22 |
Canon Kabushiki Kaisha |
Photoconductive member comprising layer of A-Si/A-Si(Ge)/A-Si(O)
|
|
DE3447671A1
(de)
*
|
1983-12-29 |
1985-07-11 |
Canon K.K., Tokio/Tokyo |
Fotoleitfaehiges aufzeichnungsmaterial
|
|
CA1254434A
(en)
*
|
1984-04-06 |
1989-05-23 |
Keishi Saitoh |
Light receiving member
|
|
JPS6126053A
(ja)
*
|
1984-07-16 |
1986-02-05 |
Minolta Camera Co Ltd |
電子写真感光体
|
|
JPS6126054A
(ja)
*
|
1984-07-16 |
1986-02-05 |
Minolta Camera Co Ltd |
電子写真感光体
|
|
JPS6126055A
(ja)
*
|
1984-07-16 |
1986-02-05 |
Minolta Camera Co Ltd |
電子写真感光体
|
|
JPS6129847A
(ja)
*
|
1984-07-20 |
1986-02-10 |
Minolta Camera Co Ltd |
電子写真感光体
|
|
US4703996A
(en)
*
|
1984-08-24 |
1987-11-03 |
American Telephone And Telegraph Company, At&T Bell Laboratories |
Integrated optical device having integral photodetector
|
|
JPS6191665A
(ja)
*
|
1984-10-11 |
1986-05-09 |
Kyocera Corp |
電子写真感光体
|
|
JPS61110152A
(ja)
*
|
1984-11-05 |
1986-05-28 |
Minolta Camera Co Ltd |
感光体
|
|
JPS61184584A
(ja)
*
|
1985-02-12 |
1986-08-18 |
Minolta Camera Co Ltd |
複写方法
|
|
FR2579825B1
(fr)
*
|
1985-03-28 |
1991-05-24 |
Sumitomo Electric Industries |
Element semi-conducteur, procede pour le realiser et articles dans lesquels cet element est utilise
|
|
US4738912A
(en)
*
|
1985-09-13 |
1988-04-19 |
Minolta Camera Kabushiki Kaisha |
Photosensitive member having an amorphous carbon transport layer
|
|
US4749636A
(en)
*
|
1985-09-13 |
1988-06-07 |
Minolta Camera Kabushiki Kaisha |
Photosensitive member with hydrogen-containing carbon layer
|
|
US4741982A
(en)
*
|
1985-09-13 |
1988-05-03 |
Minolta Camera Kabushiki Kaisha |
Photosensitive member having undercoat layer of amorphous carbon
|
|
US5166018A
(en)
*
|
1985-09-13 |
1992-11-24 |
Minolta Camera Kabushiki Kaisha |
Photosensitive member with hydrogen-containing carbon layer
|
|
US4743522A
(en)
*
|
1985-09-13 |
1988-05-10 |
Minolta Camera Kabushiki Kaisha |
Photosensitive member with hydrogen-containing carbon layer
|
|
JPH0752305B2
(ja)
*
|
1985-12-11 |
1995-06-05 |
キヤノン株式会社 |
電子写真感光体の製造方法
|
|
US4698288A
(en)
*
|
1985-12-19 |
1987-10-06 |
Xerox Corporation |
Electrophotographic imaging members having a ground plane of hydrogenated amorphous silicon
|
|
US4690830A
(en)
*
|
1986-02-18 |
1987-09-01 |
Solarex Corporation |
Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
|
|
US4910153A
(en)
*
|
1986-02-18 |
1990-03-20 |
Solarex Corporation |
Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
|
|
JPH0670717B2
(ja)
*
|
1986-04-18 |
1994-09-07 |
株式会社日立製作所 |
電子写真感光体
|
|
JPH0677158B2
(ja)
*
|
1986-09-03 |
1994-09-28 |
株式会社日立製作所 |
電子写真感光体
|
|
EP0261653A3
(en)
*
|
1986-09-26 |
1989-11-23 |
Minolta Camera Kabushiki Kaisha |
Photosensitive member comprising charge generating layer and charge transporting layer
|
|
EP0262570A3
(en)
*
|
1986-09-26 |
1989-11-23 |
Minolta Camera Kabushiki Kaisha |
Photosensitive member comprising charge generating layer and charge transporting layer
|
|
EP0261651A1
(en)
*
|
1986-09-26 |
1988-03-30 |
Minolta Camera Kabushiki Kaisha |
Photosensitive member comprising charge generating layer and charge transporting layer
|
|
US4711831A
(en)
*
|
1987-01-27 |
1987-12-08 |
Eastman Kodak Company |
Spectral sensitization of amorphous silicon photoconductive elements with phthalocyanine and arylamine layers
|
|
US5000831A
(en)
*
|
1987-03-09 |
1991-03-19 |
Minolta Camera Kabushiki Kaisha |
Method of production of amorphous hydrogenated carbon layer
|
|
US5264710A
(en)
*
|
1989-03-21 |
1993-11-23 |
Kanegafuchi Kagaku Kogyo Kabushiki Kaisha |
Amorphous semiconductor, amorphous semiconductor device using hydrogen radicals
|