DE3234925A1 - Duennschichtvorrichtung und verfahren zu deren herstellung - Google Patents

Duennschichtvorrichtung und verfahren zu deren herstellung

Info

Publication number
DE3234925A1
DE3234925A1 DE19823234925 DE3234925A DE3234925A1 DE 3234925 A1 DE3234925 A1 DE 3234925A1 DE 19823234925 DE19823234925 DE 19823234925 DE 3234925 A DE3234925 A DE 3234925A DE 3234925 A1 DE3234925 A1 DE 3234925A1
Authority
DE
Germany
Prior art keywords
electrode
electrodes
thin
diffused
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19823234925
Other languages
German (de)
English (en)
Other versions
DE3234925C2 (https=
Inventor
Takashi Moriguchi Hirao
Shinichiro Hirakata Ishihara
Masatoshi Hirakata Kitagawa
Koshiro Osaka Mori
Masaharu Higashiosaka Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56152751A external-priority patent/JPS5853870A/ja
Priority claimed from JP56152734A external-priority patent/JPS5853859A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE3234925A1 publication Critical patent/DE3234925A1/de
Application granted granted Critical
Publication of DE3234925C2 publication Critical patent/DE3234925C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
DE19823234925 1981-09-26 1982-09-21 Duennschichtvorrichtung und verfahren zu deren herstellung Granted DE3234925A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56152751A JPS5853870A (ja) 1981-09-26 1981-09-26 薄膜太陽電池
JP56152734A JPS5853859A (ja) 1981-09-26 1981-09-26 集積型薄膜素子の製造方法

Publications (2)

Publication Number Publication Date
DE3234925A1 true DE3234925A1 (de) 1983-04-21
DE3234925C2 DE3234925C2 (https=) 1989-06-01

Family

ID=26481577

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823234925 Granted DE3234925A1 (de) 1981-09-26 1982-09-21 Duennschichtvorrichtung und verfahren zu deren herstellung

Country Status (2)

Country Link
DE (1) DE3234925A1 (https=)
GB (1) GB2108755B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3712589A1 (de) * 1987-04-14 1988-11-03 Nukem Gmbh Verfahren zur herstellung von in reihe verschalteten duennschicht-solarzellen
DE4000089A1 (de) * 1989-01-06 1990-07-12 Mitsubishi Electric Corp Solarzelle und verfahren zu deren herstellung

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593152A (en) * 1982-11-24 1986-06-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US4724011A (en) * 1983-05-16 1988-02-09 Atlantic Richfield Company Solar cell interconnection by discrete conductive regions
EP0189976A3 (en) * 1985-01-30 1987-12-02 Energy Conversion Devices, Inc. Extremely lightweight, flexible semiconductor device arrays and method of making same
FR2582446B1 (fr) * 1985-05-24 1987-07-17 Thomson Csf Dispositif semi-conducteur photosensible et procede de fabrication d'un tel procede
JPS6265480A (ja) * 1985-09-18 1987-03-24 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池装置
DE4340402C2 (de) * 1993-11-26 1996-01-11 Siemens Solar Gmbh Verfahren zur Kontaktierung von Dünnschichtsolarmodulen

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042418A (en) * 1976-08-02 1977-08-16 Westinghouse Electric Corporation Photovoltaic device and method of making same
DE2902300A1 (de) * 1978-02-07 1979-08-09 Beam Eng Kk Elektronischer kleinrechner

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042418A (en) * 1976-08-02 1977-08-16 Westinghouse Electric Corporation Photovoltaic device and method of making same
DE2902300A1 (de) * 1978-02-07 1979-08-09 Beam Eng Kk Elektronischer kleinrechner

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Conf. Record, 12th IEEE Photovaltaic Specialists Conf., 1976, S. 466-470 *
Electronics, Febr. 1980, S. 137-142 *
Solar Energy, Bd. 23, 1979, S. 145-147 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3712589A1 (de) * 1987-04-14 1988-11-03 Nukem Gmbh Verfahren zur herstellung von in reihe verschalteten duennschicht-solarzellen
DE4000089A1 (de) * 1989-01-06 1990-07-12 Mitsubishi Electric Corp Solarzelle und verfahren zu deren herstellung
US5017243A (en) * 1989-01-06 1991-05-21 Mitsubishi Denki Kabushiki Kaisha Solar cell and a production method therefor

Also Published As

Publication number Publication date
GB2108755A (en) 1983-05-18
GB2108755B (en) 1985-07-10
DE3234925C2 (https=) 1989-06-01

Similar Documents

Publication Publication Date Title
DE4000089C2 (https=)
DE69031575T2 (de) Halbleiteranordnung mit einer trichterförmigen Verbindung zwischen Leiter-Ebenen und Verfahren zu ihrer Herstellung
DE102013217356B4 (de) Verfahren zum Herstellen eines Solarzellensegments und Verfahren zum Herstellen einer Solarzelle
DE3780817T2 (de) Sonnenzelle mit verbesserten elektrischen kontakten.
DE2749607C3 (de) Halbleiteranordnung und Verfahren zu deren Herstellung
DE10113782A1 (de) Solarzelle und Verfahren zu ihrer Herstellung
DE1614872A1 (de) Vielschichtiges Leitungssystem mit ohmischen Kontakten fuer integrierte Schaltkreise
DE2554398A1 (de) Lichtemissionsdiodenelement und -anordnung
DE2410786A1 (de) Integrierte halbleitervorrichtung und verfahren zur herstellung
DE2033532C3 (de) Halbleiteranordnung mit einer Passivierungsschicht aus Siliziumdioxid
DE1564191B2 (de) Verfahren zum herstellen einer integrierten halbleiterschaltung mit verschiedenen, gegeneinander und gegen ein gemeinsames siliziumsubstrat elektrisch isolierten schaltungselementen
DE2265257C2 (de) Verfahren zur Herstellung einer integrierten Halbleiterschaltung
DE1764378C3 (de) Integrierte Randschichtdiodenmatrix und Verfahren zu ihrer Herstellung
DE2823973A1 (de) Verfahren zur herstellung eines halbleiters und nach diesem verfahren hergestellter halbleiter
DE69401243T2 (de) Feldemissionsvorrichtung mit Kleinradiuskathode und Herstellungsverfahren dieser Vorrichtung
DE2523221A1 (de) Aufbau einer planaren integrierten schaltung und verfahren zu deren herstellung
DE3234925C2 (https=)
DE2746335C2 (https=)
DE1614391A1 (de) Mehrfach-Halbleiteranordnung
DE69215608T2 (de) Dünnschichttransistor und dessen Herstellungsmethode
DE3317108C2 (https=)
DE2147447B2 (de) Halbleiterbauelement
DE1589076B2 (de) Verfahren zum Herstellen von Halbleiteranordnungen
DE2916732C2 (de) Verfahren zum Herstellen von integrierten Halbleiterschaltungsanordnungen, bei dem Widerstandselemente gebildet werden
DE2031831A1 (de) Halbleiterdiode und Verfahren zu ihrer Herstellung

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: JUNG, E., DIPL.-CHEM. DR.PHIL. SCHIRDEWAHN, J., DI

D2 Grant after examination
8363 Opposition against the patent
8331 Complete revocation