DE3174600D1 - Fault tolerant memory system - Google Patents

Fault tolerant memory system

Info

Publication number
DE3174600D1
DE3174600D1 DE8181300562T DE3174600T DE3174600D1 DE 3174600 D1 DE3174600 D1 DE 3174600D1 DE 8181300562 T DE8181300562 T DE 8181300562T DE 3174600 T DE3174600 T DE 3174600T DE 3174600 D1 DE3174600 D1 DE 3174600D1
Authority
DE
Germany
Prior art keywords
redundant
block
memory
data buffer
sense amp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181300562T
Other languages
English (en)
Inventor
Vernon George Mckenny
David L Taylor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mostek Corp filed Critical Mostek Corp
Application granted granted Critical
Publication of DE3174600D1 publication Critical patent/DE3174600D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
DE8181300562T 1980-02-12 1981-02-11 Fault tolerant memory system Expired DE3174600D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/120,929 US4281398A (en) 1980-02-12 1980-02-12 Block redundancy for memory array

Publications (1)

Publication Number Publication Date
DE3174600D1 true DE3174600D1 (en) 1986-06-19

Family

ID=22393312

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181300562T Expired DE3174600D1 (en) 1980-02-12 1981-02-11 Fault tolerant memory system

Country Status (7)

Country Link
US (1) US4281398A (de)
EP (1) EP0034070B1 (de)
JP (1) JPH0320840B2 (de)
CA (1) CA1163374A (de)
DE (1) DE3174600D1 (de)
GB (1) GB2082005B (de)
WO (1) WO1981002360A1 (de)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441170A (en) * 1980-09-30 1984-04-03 Intel Corporation Memory redundancy apparatus for single chip memories
US4358833A (en) * 1980-09-30 1982-11-09 Intel Corporation Memory redundancy apparatus for single chip memories
JPS57105897A (en) * 1980-12-23 1982-07-01 Fujitsu Ltd Semiconductor storage device
EP0070823A1 (de) * 1981-02-02 1983-02-09 Mostek Corporation Identifizierungsschaltung für ein redundantes element eines halbleiterspeichers
US4489402A (en) * 1981-04-25 1984-12-18 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device
US4532607A (en) * 1981-07-22 1985-07-30 Tokyo Shibaura Denki Kabushiki Kaisha Programmable circuit including a latch to store a fuse's state
US4546455A (en) * 1981-12-17 1985-10-08 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device
JPS58115828A (ja) * 1981-12-29 1983-07-09 Fujitsu Ltd 半導体集積回路
JPS58137192A (ja) * 1981-12-29 1983-08-15 Fujitsu Ltd 半導体記憶装置
EP0090331B1 (de) * 1982-03-25 1991-04-17 Kabushiki Kaisha Toshiba Halbleiterspeicheranordnung
JPH0670880B2 (ja) * 1983-01-21 1994-09-07 株式会社日立マイコンシステム 半導体記憶装置
JPS59144098A (ja) * 1983-02-08 1984-08-17 Fujitsu Ltd 半導体記憶装置
US4510581A (en) * 1983-02-14 1985-04-09 Prime Computer, Inc. High speed buffer allocation apparatus
JPS59151398A (ja) * 1983-02-17 1984-08-29 Mitsubishi Electric Corp 半導体記憶装置
US4587639A (en) * 1983-03-28 1986-05-06 Fujitsu Limited Static semiconductor memory device incorporating redundancy memory cells
JPS60501878A (ja) * 1983-07-14 1985-10-31 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド 列冗長性回路を有するバイト幅メモリ回路
GB2154032B (en) * 1984-02-08 1988-04-20 Inmos Ltd A repairable memory array
US4870302A (en) * 1984-03-12 1989-09-26 Xilinx, Inc. Configurable electrical circuit having configurable logic elements and configurable interconnects
USRE34363E (en) * 1984-03-12 1993-08-31 Xilinx, Inc. Configurable electrical circuit having configurable logic elements and configurable interconnects
US4621201A (en) * 1984-03-30 1986-11-04 Trilogy Systems Corporation Integrated circuit redundancy and method for achieving high-yield production
US4646269A (en) * 1984-09-18 1987-02-24 Monolithic Memories, Inc. Multiple programmable initialize words in a programmable read only memory
US4654830A (en) * 1984-11-27 1987-03-31 Monolithic Memories, Inc. Method and structure for disabling and replacing defective memory in a PROM
US4633220A (en) * 1984-11-29 1986-12-30 American Microsystems, Inc. Decoder using pass-transistor networks
US4731759A (en) * 1985-03-18 1988-03-15 Nec Corporation Integrated circuit with built-in indicator of internal repair
US4802117A (en) * 1985-12-16 1989-01-31 Pitney Bowes Inc. Method of preserving data storage in a postal meter
US4757474A (en) * 1986-01-28 1988-07-12 Fujitsu Limited Semiconductor memory device having redundancy circuit portion
SE453228B (sv) * 1986-04-18 1988-01-18 Ericsson Telefon Ab L M Sett och anordning for att overvaka ett feltolerant datorminne
KR890003691B1 (ko) * 1986-08-22 1989-09-30 삼성전자 주식회사 블럭 열 리던던씨 회로
JPH061840B2 (ja) * 1987-07-08 1994-01-05 日本電気株式会社 光遮へい型ｕｐｒｏｍ
GB2212978A (en) * 1987-11-30 1989-08-02 Plessey Co Plc An integrated circuit having a patch array
EP0333207B1 (de) * 1988-03-18 1997-06-11 Kabushiki Kaisha Toshiba Masken-rom mit Ersatzspeicherzellen
US4814283A (en) * 1988-04-08 1989-03-21 General Electric Company Simple automated discretionary bonding of multiple parallel elements
US5426607A (en) * 1988-04-27 1995-06-20 Sharp Kabushiki Kaisha Redundant circuit for memory having redundant block operatively connected to special one of normal blocks
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
JPH0289299A (ja) * 1988-09-27 1990-03-29 Nec Corp 半導体記憶装置
US5031180A (en) * 1989-04-11 1991-07-09 Trw Inc. Triple redundant fault-tolerant register
DE69034191T2 (de) 1989-04-13 2005-11-24 Sandisk Corp., Sunnyvale EEPROM-System mit aus mehreren Chips bestehender Blocklöschung
US7190617B1 (en) 1989-04-13 2007-03-13 Sandisk Corporation Flash EEprom system
US5535328A (en) * 1989-04-13 1996-07-09 Sandisk Corporation Non-volatile memory system card with flash erasable sectors of EEprom cells including a mechanism for substituting defective cells
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
KR910005601B1 (ko) * 1989-05-24 1991-07-31 삼성전자주식회사 리던던트 블럭을 가지는 반도체 메모리장치
US4996670A (en) * 1989-09-28 1991-02-26 International Business Machines Corporation Zero standby power, radiation hardened, memory redundancy circuit
US5321510A (en) * 1989-11-13 1994-06-14 Texas Instruments Incorporated Serial video processor
US5200922A (en) * 1990-10-24 1993-04-06 Rao Kameswara K Redundancy circuit for high speed EPROM and flash memory devices
KR940008208B1 (ko) * 1990-12-22 1994-09-08 삼성전자주식회사 반도체 메모리장치의 리던던트 장치 및 방법
US5528600A (en) * 1991-01-28 1996-06-18 Actel Corporation Testability circuits for logic arrays
US5233559A (en) * 1991-02-11 1993-08-03 Intel Corporation Row redundancy for flash memories
KR940008211B1 (ko) * 1991-08-21 1994-09-08 삼성전자 주식회사 반도체메모리장치의 리던던트 셀 어레이 배열방법
US5262994A (en) * 1992-01-31 1993-11-16 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with a multiplexer for selecting an output for a redundant memory access
US5257229A (en) * 1992-01-31 1993-10-26 Sgs-Thomson Microelectronics, Inc. Column redundancy architecture for a read/write memory
KR0138208B1 (ko) * 1994-12-08 1998-04-28 문정환 반도체 메모리 소자
AUPN232595A0 (en) * 1995-04-12 1995-05-04 Eastman Kodak Company Block fault tolerance in integrated printing heads
US5815179A (en) * 1995-04-12 1998-09-29 Eastman Kodak Company Block fault tolerance in integrated printing heads
US5621690A (en) * 1995-04-28 1997-04-15 Intel Corporation Nonvolatile memory blocking architecture and redundancy
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6081878A (en) 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
GB2312974A (en) * 1996-05-10 1997-11-12 Memory Corp Plc Memory replacement
US6008538A (en) * 1996-10-08 1999-12-28 Micron Technology, Inc. Method and apparatus providing redundancy for fabricating highly reliable memory modules
JPH10162585A (ja) * 1996-12-03 1998-06-19 Sony Corp トリミング機能付きセンスアンプを備えた半導体メモリ素子
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
CA2223222C (en) * 1997-11-28 2006-05-02 Mosaid Technologies Incorporated Data-bit redundancy for semiconductor memories
US6144591A (en) * 1997-12-30 2000-11-07 Mosaid Technologies Incorporated Redundancy selection circuit for semiconductor memories
US6021064A (en) * 1998-02-04 2000-02-01 Vlsi Technology, Inc. Layout for data storage circuit using shared bit line and method therefor
US6072713A (en) * 1998-02-04 2000-06-06 Vlsi Technology, Inc. Data storage circuit using shared bit line and method therefor
AU1729100A (en) 1998-11-17 2000-06-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6201729B1 (en) 1999-02-01 2001-03-13 Cisco Technology Inc. DRAM hidden row access method and apparatus
US6732229B1 (en) 1999-02-24 2004-05-04 Monolithic System Technology, Inc. Method and apparatus for memory redundancy with no critical delay-path
DE10026993B4 (de) * 1999-06-03 2014-04-03 Samsung Electronics Co., Ltd. Flash-Speicherbauelement mit einer neuen Redundanzansteuerschaltung
US6249464B1 (en) 1999-12-15 2001-06-19 Cypress Semiconductor Corp. Block redundancy in ultra low power memory circuits
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
TW546664B (en) * 2001-01-17 2003-08-11 Toshiba Corp Semiconductor storage device formed to optimize test technique and redundancy technology
US6587936B1 (en) 2001-02-21 2003-07-01 Cisco Technology, Inc. Multi-bank memory access method and apparatus
US7321518B1 (en) 2004-01-15 2008-01-22 Altera Corporation Apparatus and methods for providing redundancy in integrated circuits
US7277346B1 (en) * 2004-12-14 2007-10-02 Altera Corporation Method and system for hard failure repairs in the field
US7394690B2 (en) * 2006-03-24 2008-07-01 Sandisk Corporation Method for column redundancy using data latches in solid-state memories
US7324389B2 (en) * 2006-03-24 2008-01-29 Sandisk Corporation Non-volatile memory with redundancy data buffered in remote buffer circuits
US7352635B2 (en) * 2006-03-24 2008-04-01 Sandisk Corporation Method for remote redundancy for non-volatile memory
AT509285B1 (de) 2009-12-17 2016-01-15 Sms Siemag Process Technologies Gmbh Verfahren und vorrichtung zur herstellung einer eisen(iii)chloridlösung
US9858220B2 (en) * 2014-03-17 2018-01-02 Purdue Research Foundation Computing architecture with concurrent programmable data co-processor
KR20210017481A (ko) * 2019-08-08 2021-02-17 에스케이하이닉스 주식회사 컨트롤러 및 컨트롤러의 동작방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3897626A (en) * 1971-06-25 1975-08-05 Ibm Method of manufacturing a full capacity monolithic memory utilizing defective storage cells
US3753235A (en) * 1971-08-18 1973-08-14 Ibm Monolithic memory module redundancy scheme using prewired substrates
US3753244A (en) * 1971-08-18 1973-08-14 Ibm Yield enhancement redundancy technique
FR2164498B1 (de) * 1971-12-23 1975-06-13 Thomson Csf
US3755791A (en) * 1972-06-01 1973-08-28 Ibm Memory system with temporary or permanent substitution of cells for defective cells
US3940740A (en) * 1973-06-27 1976-02-24 Actron Industries, Inc. Method for providing reconfigurable microelectronic circuit devices and products produced thereby
JPS5528160B2 (de) * 1974-12-16 1980-07-25
JPS5721799B2 (de) * 1975-02-01 1982-05-10
US3995261A (en) * 1975-02-24 1976-11-30 Stanford Research Institute Reconfigurable memory
JPS51128235A (en) * 1975-04-30 1976-11-09 Toshiba Corp A semi-conductor integration circuit memory
JPS51138344A (en) * 1975-05-26 1976-11-29 Hitachi Ltd Memory device
US4032765A (en) * 1976-02-23 1977-06-28 Burroughs Corporation Memory modification system
JPS52124826A (en) * 1976-04-12 1977-10-20 Fujitsu Ltd Memory unit
US4183095A (en) * 1978-09-01 1980-01-08 Ncr Corporation High density memory device

Also Published As

Publication number Publication date
GB2082005B (en) 1984-03-07
EP0034070A3 (en) 1982-06-09
JPH0320840B2 (de) 1991-03-20
JPS57500128A (de) 1982-01-21
US4281398A (en) 1981-07-28
GB2082005A (en) 1982-02-24
EP0034070A2 (de) 1981-08-19
WO1981002360A1 (en) 1981-08-20
EP0034070B1 (de) 1986-05-14
CA1163374A (en) 1984-03-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SGS-THOMSON MICROELECTRONICS, INC. (N.D.GES.DES ST

8328 Change in the person/name/address of the agent

Free format text: DERZEIT KEIN VERTRETER BESTELLT

8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE REICHEL UND REICHEL, 60322 FRANKFURT

8339 Ceased/non-payment of the annual fee