DE3141056A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE3141056A1
DE3141056A1 DE19813141056 DE3141056A DE3141056A1 DE 3141056 A1 DE3141056 A1 DE 3141056A1 DE 19813141056 DE19813141056 DE 19813141056 DE 3141056 A DE3141056 A DE 3141056A DE 3141056 A1 DE3141056 A1 DE 3141056A1
Authority
DE
Germany
Prior art keywords
substrate
layer
capacitor
semiconductor device
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19813141056
Other languages
German (de)
English (en)
Other versions
DE3141056C2 (ja
Inventor
Masanobu Osaka Kohara
Hidefumi Kawanishi Hyogo Nakata
Hiroshi Hyogo Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3141056A1 publication Critical patent/DE3141056A1/de
Application granted granted Critical
Publication of DE3141056C2 publication Critical patent/DE3141056C2/de
Granted legal-status Critical Current

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    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19813141056 1980-10-20 1981-10-15 Halbleitervorrichtung Granted DE3141056A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147165A JPS609349B2 (ja) 1980-10-20 1980-10-20 ダイナミック・ランダム・アクセス半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE3141056A1 true DE3141056A1 (de) 1982-05-13
DE3141056C2 DE3141056C2 (ja) 1988-01-14

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0144887A2 (de) * 1983-11-30 1985-06-19 Siemens Aktiengesellschaft Halbleiterbauelement mit höckerartigen, metallischen Anschlusskontakten und Mehrlagenverdrahtung
EP0152557A1 (de) * 1983-11-30 1985-08-28 Siemens Aktiengesellschaft Halbleiterbauelement mit höckerartigen, metallischen Anschlusskontakten und Mehrlagenverdrahtung

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US3292240A (en) * 1963-08-08 1966-12-20 Ibm Method of fabricating microminiature functional components
DE1933547B2 (de) * 1968-07-05 1972-03-02 Traeger fuer halbleiterbauelemente
DE2337325A1 (de) * 1973-07-23 1975-02-13 Siemens Ag Mit kunststoff umhuellter elektrischer kondensator
DE2548563A1 (de) * 1975-10-30 1977-05-05 Licentia Gmbh Verfahren zum herstellen eines kondensators
DE2658302A1 (de) * 1975-12-26 1977-07-07 Suwa Seikosha Kk Verfahren zum bonden von integrierten schaltungen
DE2839110A1 (de) * 1977-09-12 1979-03-22 Philips Nv Verfahren zum anbringen von metallkugeln auf einem mit oeffnungen versehenen substrat und mit metallkugeln versehenes substrat

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US3292240A (en) * 1963-08-08 1966-12-20 Ibm Method of fabricating microminiature functional components
DE1933547B2 (de) * 1968-07-05 1972-03-02 Traeger fuer halbleiterbauelemente
DE2337325A1 (de) * 1973-07-23 1975-02-13 Siemens Ag Mit kunststoff umhuellter elektrischer kondensator
DE2548563A1 (de) * 1975-10-30 1977-05-05 Licentia Gmbh Verfahren zum herstellen eines kondensators
DE2658302A1 (de) * 1975-12-26 1977-07-07 Suwa Seikosha Kk Verfahren zum bonden von integrierten schaltungen
DE2839110A1 (de) * 1977-09-12 1979-03-22 Philips Nv Verfahren zum anbringen von metallkugeln auf einem mit oeffnungen versehenen substrat und mit metallkugeln versehenes substrat

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US-Z.: "IBM Techn. Discl. Bull.", Vol. 15, No. 2, Juli 1972, S. 656-657 *
US-Z.: "IEEE Transactions on Electron Devices" Vol. ED-26, No. 6, Juni 1979, S. 853-860 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0144887A2 (de) * 1983-11-30 1985-06-19 Siemens Aktiengesellschaft Halbleiterbauelement mit höckerartigen, metallischen Anschlusskontakten und Mehrlagenverdrahtung
EP0144887A3 (de) * 1983-11-30 1985-07-17 Siemens Aktiengesellschaft Halbleiterbauelement mit höckerartigen, metallischen Anschlusskontakten und Mehrlagenverdrahtung
EP0152557A1 (de) * 1983-11-30 1985-08-28 Siemens Aktiengesellschaft Halbleiterbauelement mit höckerartigen, metallischen Anschlusskontakten und Mehrlagenverdrahtung

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JPS609349B2 (ja) 1985-03-09
DE3141056C2 (ja) 1988-01-14
JPS5771171A (en) 1982-05-01

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