DE3141056C2 - - Google Patents

Info

Publication number
DE3141056C2
DE3141056C2 DE3141056A DE3141056A DE3141056C2 DE 3141056 C2 DE3141056 C2 DE 3141056C2 DE 3141056 A DE3141056 A DE 3141056A DE 3141056 A DE3141056 A DE 3141056A DE 3141056 C2 DE3141056 C2 DE 3141056C2
Authority
DE
Germany
Prior art keywords
capacitors
layer
substrate
semiconductor substrate
individual
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3141056A
Other languages
German (de)
English (en)
Other versions
DE3141056A1 (de
Inventor
Hiroshi Hyogo Jp Shibata
Masanobu Osaka Jp Kohara
Hidefumi Kawanishi Hyogo Jp Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3141056A1 publication Critical patent/DE3141056A1/de
Application granted granted Critical
Publication of DE3141056C2 publication Critical patent/DE3141056C2/de
Granted legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15Ceramic or glass substrates
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    • H01L27/0605Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19813141056 1980-10-20 1981-10-15 Halbleitervorrichtung Granted DE3141056A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147165A JPS609349B2 (ja) 1980-10-20 1980-10-20 ダイナミック・ランダム・アクセス半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE3141056A1 DE3141056A1 (de) 1982-05-13
DE3141056C2 true DE3141056C2 (ja) 1988-01-14

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813141056 Granted DE3141056A1 (de) 1980-10-20 1981-10-15 Halbleitervorrichtung

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JP (1) JPS609349B2 (ja)
DE (1) DE3141056A1 (ja)

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Publication number Priority date Publication date Assignee Title
DE3343351A1 (de) * 1983-11-30 1985-06-05 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit hoeckerartig, metallischen anschlusskontakten und mehrlagenverdrahtung
DE3343367A1 (de) * 1983-11-30 1985-06-05 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit hoeckerartigen, metallischen anschlusskontakten und mehrlagenverdrahtung

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* Cited by examiner, † Cited by third party
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US3577037A (en) * 1968-07-05 1971-05-04 Ibm Diffused electrical connector apparatus and method of making same
DE2337325A1 (de) * 1973-07-23 1975-02-13 Siemens Ag Mit kunststoff umhuellter elektrischer kondensator
DE2548563A1 (de) * 1975-10-30 1977-05-05 Licentia Gmbh Verfahren zum herstellen eines kondensators
JPS5279773A (en) * 1975-12-26 1977-07-05 Seiko Epson Corp Bonding method of ic
FR2402996A1 (fr) * 1977-09-12 1979-04-06 Labo Electronique Physique Procede de realisation de bulles metalliques sur un substrat perce, substrat ainsi traite et utilisation

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