DE3072013D1 - Method of manufacturing a semiconductor device having a patterned multi-layer structure - Google Patents
Method of manufacturing a semiconductor device having a patterned multi-layer structureInfo
- Publication number
- DE3072013D1 DE3072013D1 DE8080304232T DE3072013T DE3072013D1 DE 3072013 D1 DE3072013 D1 DE 3072013D1 DE 8080304232 T DE8080304232 T DE 8080304232T DE 3072013 T DE3072013 T DE 3072013T DE 3072013 D1 DE3072013 D1 DE 3072013D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- layer structure
- patterned multi
- patterned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0335—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15400379A JPS5690525A (en) | 1979-11-28 | 1979-11-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3072013D1 true DE3072013D1 (en) | 1987-09-24 |
Family
ID=15574782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080304232T Expired DE3072013D1 (en) | 1979-11-28 | 1980-11-26 | Method of manufacturing a semiconductor device having a patterned multi-layer structure |
Country Status (6)
Country | Link |
---|---|
US (1) | US4352724B1 (de) |
EP (1) | EP0030116B2 (de) |
JP (1) | JPS5690525A (de) |
CA (1) | CA1155973A (de) |
DE (1) | DE3072013D1 (de) |
IE (1) | IE52972B1 (de) |
Families Citing this family (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56157025A (en) * | 1980-05-07 | 1981-12-04 | Nec Corp | Manufacture of semiconductor device |
US4380488A (en) * | 1980-10-14 | 1983-04-19 | Branson International Plasma Corporation | Process and gas mixture for etching aluminum |
JPS57124440A (en) * | 1981-01-27 | 1982-08-03 | Nec Corp | Compound etching method |
US4472237A (en) * | 1981-05-22 | 1984-09-18 | At&T Bell Laboratories | Reactive ion etching of tantalum and silicon |
JPS57199223A (en) * | 1981-06-01 | 1982-12-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS5817619A (ja) * | 1981-07-23 | 1983-02-01 | Toshiba Corp | パタ−ン形成方法 |
US4457820A (en) * | 1981-12-24 | 1984-07-03 | International Business Machines Corporation | Two step plasma etching |
JPS58125829A (ja) * | 1982-01-22 | 1983-07-27 | Hitachi Ltd | ドライエツチング方法 |
JPS58143535A (ja) * | 1982-02-22 | 1983-08-26 | Hitachi Ltd | 半導体装置の製造方法 |
US4450042A (en) * | 1982-07-06 | 1984-05-22 | Texas Instruments Incorporated | Plasma etch chemistry for anisotropic etching of silicon |
US4417947A (en) * | 1982-07-16 | 1983-11-29 | Signetics Corporation | Edge profile control during patterning of silicon by dry etching with CCl4 -O2 mixtures |
JPS5916978A (ja) * | 1982-07-20 | 1984-01-28 | Tokyo Denshi Kagaku Kabushiki | 金属被膜の選択的エツチング方法 |
JPS5923876A (ja) * | 1982-07-28 | 1984-02-07 | Hitachi Ltd | エツチング方法 |
JPS5972138A (ja) * | 1982-10-19 | 1984-04-24 | Toshiba Corp | 半導体装置の製造方法 |
US4412885A (en) * | 1982-11-03 | 1983-11-01 | Applied Materials, Inc. | Materials and methods for plasma etching of aluminum and aluminum alloys |
US4414057A (en) * | 1982-12-03 | 1983-11-08 | Inmos Corporation | Anisotropic silicide etching process |
US4444618A (en) * | 1983-03-03 | 1984-04-24 | General Electric Company | Processes and gas mixtures for the reactive ion etching of aluminum and aluminum alloys |
JPS59169135A (ja) * | 1983-03-16 | 1984-09-25 | Fujitsu Ltd | 半導体装置の製造方法 |
US4505782A (en) * | 1983-03-25 | 1985-03-19 | Lfe Corporation | Plasma reactive ion etching of aluminum and aluminum alloys |
JPS59200420A (ja) * | 1983-04-28 | 1984-11-13 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
US4617193A (en) * | 1983-06-16 | 1986-10-14 | Digital Equipment Corporation | Planar interconnect for integrated circuits |
JPS6053030A (ja) * | 1983-09-02 | 1985-03-26 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US4484978A (en) * | 1983-09-23 | 1984-11-27 | Fairchild Camera & Instrument Corp. | Etching method |
US4460435A (en) * | 1983-12-19 | 1984-07-17 | Rca Corporation | Patterning of submicrometer metal silicide structures |
US4456501A (en) * | 1983-12-22 | 1984-06-26 | Advanced Micro Devices, Inc. | Process for dislocation-free slot isolations in device fabrication |
JPS60223153A (ja) * | 1984-04-19 | 1985-11-07 | Nippon Telegr & Teleph Corp <Ntt> | Mis型キャパシタを有する半導体装置の製法 |
US4624739A (en) * | 1985-08-09 | 1986-11-25 | International Business Machines Corporation | Process using dry etchant to avoid mask-and-etch cycle |
US4734157A (en) * | 1985-08-27 | 1988-03-29 | International Business Machines Corporation | Selective and anisotropic dry etching |
EP0282820A1 (de) * | 1987-03-13 | 1988-09-21 | Siemens Aktiengesellschaft | Verfahren zum Erzeugen von Kontaktlöchern mit abgeschrägten Flanken in Zwischenoxidschichten |
JPS63258021A (ja) * | 1987-04-16 | 1988-10-25 | Toshiba Corp | 接続孔の形成方法 |
US4778583A (en) * | 1987-05-11 | 1988-10-18 | Eastman Kodak Company | Semiconductor etching process which produces oriented sloped walls |
JPS6432633A (en) * | 1987-07-29 | 1989-02-02 | Hitachi Ltd | Taper etching method |
US5316616A (en) * | 1988-02-09 | 1994-05-31 | Fujitsu Limited | Dry etching with hydrogen bromide or bromine |
US4832787A (en) * | 1988-02-19 | 1989-05-23 | International Business Machines Corporation | Gas mixture and method for anisotropic selective etch of nitride |
GB2220298A (en) * | 1988-06-29 | 1990-01-04 | Philips Nv | A method of manufacturing a semiconductor device |
US4902377A (en) * | 1989-05-23 | 1990-02-20 | Motorola, Inc. | Sloped contact etch process |
EP0410635A1 (de) * | 1989-07-28 | 1991-01-30 | AT&T Corp. | Verfahren zum Aetzen von Oeffnungen mit abgeschrägten Flanken bei der Herstellung von Integrierten Halbleiterschaltungsbauelementen |
JP2673380B2 (ja) * | 1990-02-20 | 1997-11-05 | 三菱電機株式会社 | プラズマエッチングの方法 |
JPH04225525A (ja) * | 1990-12-27 | 1992-08-14 | Sony Corp | ドライエッチング方法 |
JPH05152293A (ja) * | 1991-04-30 | 1993-06-18 | Sgs Thomson Microelectron Inc | 段差付き壁相互接続体及びゲートの製造方法 |
EP0541160A1 (de) * | 1991-11-07 | 1993-05-12 | Koninklijke Philips Electronics N.V. | Verfahren zur Herstellung einer Halbleiteranordnung, wobei in einer Siliciumnitrid enthaltenden isolierenden Schichtkontaktfenster mit zwei Ätzschritten angebracht werden |
US5759869A (en) * | 1991-12-31 | 1998-06-02 | Sgs-Thomson Microelectronics, Inc. | Method to imporve metal step coverage by contact reflow |
US5880036A (en) * | 1992-06-15 | 1999-03-09 | Micron Technology, Inc. | Method for enhancing oxide to nitride selectivity through the use of independent heat control |
US5505816A (en) * | 1993-12-16 | 1996-04-09 | International Business Machines Corporation | Etching of silicon dioxide selectively to silicon nitride and polysilicon |
EP0660392A1 (de) | 1993-12-17 | 1995-06-28 | STMicroelectronics, Inc. | Verfahren und Struktur der dielektrischen Zwischenschicht zur verbesserten metallischen Stufenbeschichtung |
US5780343A (en) * | 1995-12-20 | 1998-07-14 | National Semiconductor Corporation | Method of producing high quality silicon surface for selective epitaxial growth of silicon |
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JP3252780B2 (ja) * | 1998-01-16 | 2002-02-04 | 日本電気株式会社 | シリコン層のエッチング方法 |
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KR100292616B1 (ko) * | 1998-10-09 | 2001-07-12 | 윤종용 | 트렌치격리의제조방법 |
JP3287322B2 (ja) * | 1998-12-28 | 2002-06-04 | 日本電気株式会社 | 半導体装置の製造方法 |
DE19910886B4 (de) * | 1999-03-11 | 2008-08-14 | Infineon Technologies Ag | Verfahren zur Herstellung einer flachen Grabenisolation für elektrisch aktive Bauelemente |
US6271141B2 (en) * | 1999-03-23 | 2001-08-07 | Micron Technology, Inc. | Methods of forming materials over uneven surface topologies, and methods of forming insulative materials over and between conductive lines |
US6444588B1 (en) | 1999-04-26 | 2002-09-03 | Micron Technology, Inc. | Anti-reflective coatings and methods regarding same |
JP4627843B2 (ja) | 1999-07-22 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US6372151B1 (en) | 1999-07-27 | 2002-04-16 | Applied Materials, Inc. | Storage poly process without carbon contamination |
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KR100335495B1 (ko) * | 1999-11-12 | 2002-05-08 | 윤종용 | 디봇 발생을 방지하며 공정이 간단한 소자분리막의 제조방법 |
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Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5240978A (en) * | 1975-09-27 | 1977-03-30 | Fujitsu Ltd | Process for production of semiconductor device |
-
1979
- 1979-11-28 JP JP15400379A patent/JPS5690525A/ja active Granted
-
1980
- 1980-11-19 US US06208391 patent/US4352724B1/en not_active Expired - Lifetime
- 1980-11-26 IE IE2457/80A patent/IE52972B1/en not_active IP Right Cessation
- 1980-11-26 DE DE8080304232T patent/DE3072013D1/de not_active Expired
- 1980-11-26 EP EP80304232A patent/EP0030116B2/de not_active Expired - Lifetime
- 1980-11-27 CA CA000365656A patent/CA1155973A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IE52972B1 (en) | 1988-04-27 |
CA1155973A (en) | 1983-10-25 |
JPS5690525A (en) | 1981-07-22 |
IE802457L (en) | 1981-05-28 |
EP0030116A2 (de) | 1981-06-10 |
EP0030116A3 (en) | 1985-05-15 |
EP0030116B2 (de) | 1992-04-22 |
JPH0135495B2 (de) | 1989-07-25 |
US4352724B1 (en) | 1997-06-10 |
US4352724A (en) | 1982-10-05 |
EP0030116B1 (de) | 1987-08-19 |
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