DE3041232A1 - Halbleiteranordnung mit einer anzahl in reihe geschalteter dioden und verfahren zu deren herstellung - Google Patents
Halbleiteranordnung mit einer anzahl in reihe geschalteter dioden und verfahren zu deren herstellungInfo
- Publication number
- DE3041232A1 DE3041232A1 DE19803041232 DE3041232A DE3041232A1 DE 3041232 A1 DE3041232 A1 DE 3041232A1 DE 19803041232 DE19803041232 DE 19803041232 DE 3041232 A DE3041232 A DE 3041232A DE 3041232 A1 DE3041232 A1 DE 3041232A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- layer
- electrode
- highly doped
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 title claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 1
- 238000001816 cooling Methods 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000003518 caustics Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 239000004606 Fillers/Extenders Substances 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- VYRNMWDESIRGOS-UHFFFAOYSA-N [Mo].[Au] Chemical compound [Mo].[Au] VYRNMWDESIRGOS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7927480A FR2469804A1 (fr) | 1979-11-07 | 1979-11-07 | Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3041232A1 true DE3041232A1 (de) | 1981-05-14 |
Family
ID=9231399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803041232 Withdrawn DE3041232A1 (de) | 1979-11-07 | 1980-11-03 | Halbleiteranordnung mit einer anzahl in reihe geschalteter dioden und verfahren zu deren herstellung |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5676583A (fr) |
| CA (1) | CA1165009A (fr) |
| DE (1) | DE3041232A1 (fr) |
| FR (1) | FR2469804A1 (fr) |
| GB (1) | GB2062961A (fr) |
| NL (1) | NL8006019A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07107940B2 (ja) * | 1983-01-28 | 1995-11-15 | 三洋電機株式会社 | シヨツトキバリヤダイオ−ド装置 |
| WO2007142603A1 (fr) * | 2006-06-09 | 2007-12-13 | Agency For Science, Technology And Research | Masque perforé intégré et son procédé de fabrication |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2001468A1 (de) * | 1970-01-14 | 1971-07-22 | Philips Nv | Verfahren zur Herstellung von Halbleiterbauelementen |
| GB1300033A (en) * | 1970-02-13 | 1972-12-20 | Texas Instruments Inc | Integrated circuits |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1244759A (en) * | 1968-12-11 | 1971-09-02 | Associated Semiconductor Mft | Improvements in and relating to methods of manufacturing semiconductor devices |
| FR2335957A1 (fr) * | 1975-12-17 | 1977-07-15 | Radiotechnique Compelec | Dispositif semiconducteur monolithique comprenant un pont de redressement |
| FR2363896A2 (fr) * | 1976-09-01 | 1978-03-31 | Radiotechnique Compelec | Dispositif semi-conducteur monolithique comprenant un pont de redressement |
| JPS5439582A (en) * | 1977-09-02 | 1979-03-27 | Nec Corp | Integrated composite diode device |
-
1979
- 1979-11-07 FR FR7927480A patent/FR2469804A1/fr active Granted
-
1980
- 1980-10-30 CA CA000363613A patent/CA1165009A/fr not_active Expired
- 1980-11-03 GB GB8035263A patent/GB2062961A/en not_active Withdrawn
- 1980-11-03 DE DE19803041232 patent/DE3041232A1/de not_active Withdrawn
- 1980-11-04 NL NL8006019A patent/NL8006019A/nl not_active Application Discontinuation
- 1980-11-05 JP JP15477080A patent/JPS5676583A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2001468A1 (de) * | 1970-01-14 | 1971-07-22 | Philips Nv | Verfahren zur Herstellung von Halbleiterbauelementen |
| GB1300033A (en) * | 1970-02-13 | 1972-12-20 | Texas Instruments Inc | Integrated circuits |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2469804B1 (fr) | 1983-04-29 |
| GB2062961A (en) | 1981-05-28 |
| JPS5676583A (en) | 1981-06-24 |
| NL8006019A (nl) | 1981-06-01 |
| FR2469804A1 (fr) | 1981-05-22 |
| CA1165009A (fr) | 1984-04-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8130 | Withdrawal |