JPS5676583A - Semiconductor device and method of fabricating same - Google Patents
Semiconductor device and method of fabricating sameInfo
- Publication number
- JPS5676583A JPS5676583A JP15477080A JP15477080A JPS5676583A JP S5676583 A JPS5676583 A JP S5676583A JP 15477080 A JP15477080 A JP 15477080A JP 15477080 A JP15477080 A JP 15477080A JP S5676583 A JPS5676583 A JP S5676583A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- fabricating same
- fabricating
- same
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7927480A FR2469804A1 (fr) | 1979-11-07 | 1979-11-07 | Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5676583A true JPS5676583A (en) | 1981-06-24 |
Family
ID=9231399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15477080A Pending JPS5676583A (en) | 1979-11-07 | 1980-11-05 | Semiconductor device and method of fabricating same |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5676583A (fr) |
CA (1) | CA1165009A (fr) |
DE (1) | DE3041232A1 (fr) |
FR (1) | FR2469804A1 (fr) |
GB (1) | GB2062961A (fr) |
NL (1) | NL8006019A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59138385A (ja) * | 1983-01-28 | 1984-08-08 | Sanyo Electric Co Ltd | シヨツトキバリヤダイオ−ド装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007142603A1 (fr) * | 2006-06-09 | 2007-12-13 | Agency For Science, Technology And Research | Masque perforé intégré et son procédé de fabrication |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5439582A (en) * | 1977-09-02 | 1979-03-27 | Nec Corp | Integrated composite diode device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1244759A (en) * | 1968-12-11 | 1971-09-02 | Associated Semiconductor Mft | Improvements in and relating to methods of manufacturing semiconductor devices |
DE2001468A1 (de) * | 1970-01-14 | 1971-07-22 | Philips Nv | Verfahren zur Herstellung von Halbleiterbauelementen |
DE2106540A1 (de) * | 1970-02-13 | 1971-08-19 | Texas Instruments Inc | Halbleiterschaltung und Verfahren zu ihrer Herstellung |
FR2335957A1 (fr) * | 1975-12-17 | 1977-07-15 | Radiotechnique Compelec | Dispositif semiconducteur monolithique comprenant un pont de redressement |
FR2363896A2 (fr) * | 1976-09-01 | 1978-03-31 | Radiotechnique Compelec | Dispositif semi-conducteur monolithique comprenant un pont de redressement |
-
1979
- 1979-11-07 FR FR7927480A patent/FR2469804A1/fr active Granted
-
1980
- 1980-10-30 CA CA000363613A patent/CA1165009A/fr not_active Expired
- 1980-11-03 GB GB8035263A patent/GB2062961A/en not_active Withdrawn
- 1980-11-03 DE DE19803041232 patent/DE3041232A1/de not_active Withdrawn
- 1980-11-04 NL NL8006019A patent/NL8006019A/nl not_active Application Discontinuation
- 1980-11-05 JP JP15477080A patent/JPS5676583A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5439582A (en) * | 1977-09-02 | 1979-03-27 | Nec Corp | Integrated composite diode device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59138385A (ja) * | 1983-01-28 | 1984-08-08 | Sanyo Electric Co Ltd | シヨツトキバリヤダイオ−ド装置 |
Also Published As
Publication number | Publication date |
---|---|
FR2469804B1 (fr) | 1983-04-29 |
GB2062961A (en) | 1981-05-28 |
NL8006019A (nl) | 1981-06-01 |
FR2469804A1 (fr) | 1981-05-22 |
CA1165009A (fr) | 1984-04-03 |
DE3041232A1 (de) | 1981-05-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5615529A (en) | Semiconductor device and method of fabricating same | |
JPS55160473A (en) | Semiconductor device and method of fabricating same | |
JPS55108752A (en) | Semiconductor device and method of fabricating same | |
JPS5623779A (en) | Semiconductor device and method of manufacturing same | |
JPS55160476A (en) | Phtovoltaic device and method of fabricating same | |
JPS56124274A (en) | Serial connecting combination of 22terminal semiconductor device and method of forming same | |
JPS5567172A (en) | Method of fabricating semiconductor and semiconductor device | |
DE3174468D1 (en) | Semiconductor device and method of manufacturing the same | |
DE3069594D1 (en) | Semiconductor device and method of manufacturing the same | |
JPS54158190A (en) | Semiconductor device and method of fabricating same | |
JPS5650563A (en) | Method of manufacturing semiconductor device | |
JPS5650578A (en) | Semiconductor device and method of manufacturing same | |
JPS54158896A (en) | Piezooelectric device and method of fabricating same | |
JPS54158881A (en) | Field effect device and method of fabricating same | |
JPS55141753A (en) | Method of fabricating semiconductor device | |
JPS571260A (en) | Semiconductor device and method of manufacturing same | |
JPS55132054A (en) | Semiconductor device and method of fabricating same | |
JPS5596653A (en) | Semiconductor device and method of fabricating same | |
JPS5696868A (en) | Method of manufacturing semiconductor device | |
JPS54136281A (en) | Semiconductor device and method of fabricating same | |
JPS55146957A (en) | Semiconductor resistor and method of fabricating same | |
JPS5693366A (en) | Method of manufacturing semiconductor device | |
JPS5664461A (en) | Semiconductor device and method of manufacturing same | |
JPS5491187A (en) | Semiconductor and method of fabricating same | |
JPS5593271A (en) | Method of fabricating integrated semiconductor device |