DE3039261A1 - Integrierte halbleiterschaltungsvorrichtung - Google Patents

Integrierte halbleiterschaltungsvorrichtung

Info

Publication number
DE3039261A1
DE3039261A1 DE19803039261 DE3039261A DE3039261A1 DE 3039261 A1 DE3039261 A1 DE 3039261A1 DE 19803039261 DE19803039261 DE 19803039261 DE 3039261 A DE3039261 A DE 3039261A DE 3039261 A1 DE3039261 A1 DE 3039261A1
Authority
DE
Germany
Prior art keywords
amplifier circuit
substrate
semiconductor substrate
wire connection
connection strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19803039261
Other languages
German (de)
English (en)
Inventor
Kunio Tokyo Seki
Ritsuji Hino Tokyo Takeshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3039261A1 publication Critical patent/DE3039261A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/311—Design considerations for internal polarisation in bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/206—Wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)
  • Amplifiers (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19803039261 1979-10-26 1980-10-17 Integrierte halbleiterschaltungsvorrichtung Ceased DE3039261A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13764579A JPS5662352A (en) 1979-10-26 1979-10-26 Semiconductor integrated circuit device for acoustic amplification circuit

Publications (1)

Publication Number Publication Date
DE3039261A1 true DE3039261A1 (de) 1981-05-07

Family

ID=15203472

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803039261 Ceased DE3039261A1 (de) 1979-10-26 1980-10-17 Integrierte halbleiterschaltungsvorrichtung

Country Status (8)

Country Link
US (1) US4403240A (https=)
JP (1) JPS5662352A (https=)
DE (1) DE3039261A1 (https=)
GB (1) GB2061617B (https=)
HK (1) HK37785A (https=)
IT (1) IT1134010B (https=)
MY (1) MY8600121A (https=)
SG (1) SG63084G (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3309223A1 (de) * 1982-03-15 1983-10-06 Mitsubishi Electric Corp Halbleiterelement mit integrierter schaltung
DE3428881A1 (de) * 1983-08-10 1985-02-28 Rca Corp., New York, N.Y. Verfahren zum herstellen einer integrierten schaltungsvorrichtung

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210661A (en) * 1981-06-19 1982-12-24 Hitachi Ltd Semiconductor integrated circuit device
JPS5870564A (ja) * 1981-10-23 1983-04-27 Hitachi Ltd 集積回路の電源供給回路
JPS594050A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
US4631572A (en) * 1983-09-27 1986-12-23 Trw Inc. Multiple path signal distribution to large scale integration chips
JPS6079754U (ja) * 1983-11-07 1985-06-03 三洋電機株式会社 半導体集積回路装置
US4751458A (en) * 1984-04-02 1988-06-14 American Telephone And Telegraph Company, At&T Bell Laboratories Test pads for integrated circuit chips
EP0204177A1 (de) * 1985-05-31 1986-12-10 Siemens Aktiengesellschaft Anschlussanordnung für einen integrierten Halbleiterschaltkreis
DE3626151C3 (de) * 1986-08-01 1995-06-14 Siemens Ag Spannungszuführungsanordnung für eine integrierte Halbleiterschaltung
JPH0249463A (ja) * 1988-05-27 1990-02-19 Matsushita Electron Corp 半導体装置
JPH0233801U (https=) * 1988-08-22 1990-03-02
JPH03259561A (ja) * 1990-03-09 1991-11-19 Fujitsu Ltd 半導体装置
JP2917607B2 (ja) * 1991-10-02 1999-07-12 セイコーエプソン株式会社 半導体装置用リードフレーム
JP3246129B2 (ja) * 1993-10-01 2002-01-15 ソニー株式会社 半導体素子の製造方法
JP2807396B2 (ja) * 1993-05-25 1998-10-08 ローム株式会社 半導体装置
JP2520225B2 (ja) * 1994-01-26 1996-07-31 富士通株式会社 半導体集積回路装置
US5684332A (en) * 1994-05-27 1997-11-04 Advanced Semiconductor Engineering, Inc. Method of packaging a semiconductor device with minimum bonding pad pitch and packaged device therefrom
RU2133067C1 (ru) * 1996-02-20 1999-07-10 Завьялов Дмитрий Валентинович Интегральная схема
FR2769131B1 (fr) * 1997-09-29 1999-12-24 St Microelectronics Sa Dispositif semi-conducteur a deux plots de connexion de masse relies a une patte de connexion de masse et procede pour tester un tel dispositif
US6351040B1 (en) 1998-01-22 2002-02-26 Micron Technology, Inc. Method and apparatus for implementing selected functionality on an integrated circuit device
US6169331B1 (en) 1998-08-28 2001-01-02 Micron Technology, Inc. Apparatus for electrically coupling bond pads of a microelectronic device
US6373143B1 (en) 1998-09-24 2002-04-16 International Business Machines Corporation Integrated circuit having wirebond pads suitable for probing
WO2002005342A1 (en) * 2000-07-06 2002-01-17 Zeta, A Division Of Sierratech, Inc. A solid state power amplifying device
US8258616B1 (en) 2002-01-16 2012-09-04 Marvell International Ltd. Semiconductor dice having a shielded area created under bond wires connecting pairs of bonding pads
US6770982B1 (en) 2002-01-16 2004-08-03 Marvell International, Ltd. Semiconductor device power distribution system and method
US6861762B1 (en) * 2002-05-01 2005-03-01 Marvell Semiconductor Israel Ltd. Flip chip with novel power and ground arrangement

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3688132A (en) * 1969-09-11 1972-08-29 Brian Gill A high frequency integrated circuit having circuit elements in separate and mutually spaced isolation regions

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3558992A (en) 1968-06-17 1971-01-26 Rca Corp Integrated circuit having bonding pads over unused active area components
JPS525228B2 (https=) * 1972-09-18 1977-02-10
JPS5851426B2 (ja) * 1977-07-22 1983-11-16 株式会社日立製作所 半導体集積回路装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3688132A (en) * 1969-09-11 1972-08-29 Brian Gill A high frequency integrated circuit having circuit elements in separate and mutually spaced isolation regions

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TTL-Kochbuch, herausgeg. v. Texas Instr. Freising, 5.Aufl. 1978, S.76-79 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3309223A1 (de) * 1982-03-15 1983-10-06 Mitsubishi Electric Corp Halbleiterelement mit integrierter schaltung
DE3428881A1 (de) * 1983-08-10 1985-02-28 Rca Corp., New York, N.Y. Verfahren zum herstellen einer integrierten schaltungsvorrichtung

Also Published As

Publication number Publication date
HK37785A (en) 1985-05-24
GB2061617B (en) 1983-12-21
JPS5662352A (en) 1981-05-28
MY8600121A (en) 1986-12-31
US4403240A (en) 1983-09-06
IT1134010B (it) 1986-07-24
GB2061617A (en) 1981-05-13
IT8025539A0 (it) 1980-10-23
SG63084G (en) 1985-03-29
JPS6331105B2 (https=) 1988-06-22

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Legal Events

Date Code Title Description
OR8 Request for search as to paragraph 43 lit. 1 sentence 1 patent law
8128 New person/name/address of the agent

Representative=s name: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBE

8110 Request for examination paragraph 44
8131 Rejection