DE3026026C2 - - Google Patents

Info

Publication number
DE3026026C2
DE3026026C2 DE3026026A DE3026026A DE3026026C2 DE 3026026 C2 DE3026026 C2 DE 3026026C2 DE 3026026 A DE3026026 A DE 3026026A DE 3026026 A DE3026026 A DE 3026026A DE 3026026 C2 DE3026026 C2 DE 3026026C2
Authority
DE
Germany
Prior art keywords
layer
aluminum oxide
oxide layer
wiring
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3026026A
Other languages
German (de)
English (en)
Other versions
DE3026026A1 (de
Inventor
Toshio Yokosuka Kanagawa Jp Yonezawa
Masaharu Yokohama Kanagawa Jp Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8771879A external-priority patent/JPS6058587B2/ja
Priority claimed from JP8771779A external-priority patent/JPS5612740A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3026026A1 publication Critical patent/DE3026026A1/de
Application granted granted Critical
Publication of DE3026026C2 publication Critical patent/DE3026026C2/de
Granted legal-status Critical Current

Links

Classifications

    • H10P14/6314—
    • H10P14/6324—
    • H10P14/6329—
    • H10P14/665—
    • H10P14/6928—
    • H10P14/6929—
    • H10P14/6936—
    • H10P14/6939—
    • H10P14/69391—
    • H10P14/69397—
    • H10W20/4407—
    • H10W20/48—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/937—Hillock prevention

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19803026026 1979-07-11 1980-07-09 Halbleiterelement und verfahren zu seiner herstellung Granted DE3026026A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8771879A JPS6058587B2 (ja) 1979-07-11 1979-07-11 半導体装置の製造方法
JP8771779A JPS5612740A (en) 1979-07-11 1979-07-11 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
DE3026026A1 DE3026026A1 (de) 1981-01-22
DE3026026C2 true DE3026026C2 (enExample) 1990-12-06

Family

ID=26428965

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803026026 Granted DE3026026A1 (de) 1979-07-11 1980-07-09 Halbleiterelement und verfahren zu seiner herstellung

Country Status (2)

Country Link
US (2) US4433004A (enExample)
DE (1) DE3026026A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014211464A1 (de) * 2014-06-16 2015-12-17 Robert Bosch Gmbh Halbleitermodul mit einer elektrisch isolierten Wärmesenke

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US4520554A (en) * 1983-02-10 1985-06-04 Rca Corporation Method of making a multi-level metallization structure for semiconductor device
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US4790920A (en) * 1985-12-20 1988-12-13 Intel Corporation Method for depositing an al2 O3 cap layer on an integrated circuit substrate
JPH0656883B2 (ja) * 1986-03-03 1994-07-27 鐘淵化学工業株式会社 半導体装置
US4816895A (en) * 1986-03-06 1989-03-28 Nec Corporation Integrated circuit device with an improved interconnection line
DE3610036A1 (de) * 1986-03-21 1987-09-24 Schering Ag Kontaktieren von mikroelektronischen schaltungen
US4767724A (en) * 1986-03-27 1988-08-30 General Electric Company Unframed via interconnection with dielectric etch stop
DE3637513A1 (de) * 1986-11-04 1988-05-11 Semikron Elektronik Gmbh Verfahren zum herstellen feinstrukturierter kontaktelektroden von leistungs-halbleiterbauelementen
JPH0687464B2 (ja) * 1986-12-17 1994-11-02 日本電装株式会社 アルミニウム合金配線装置およびその製造方法
US5147484A (en) * 1987-10-19 1992-09-15 International Business Machines Corporation Method for producing multi-layer ceramic substrates with oxidation resistant metalization
US5227314A (en) * 1989-03-22 1993-07-13 At&T Bell Laboratories Method of making metal conductors having a mobile inn getterer therein
US5016081A (en) * 1989-03-22 1991-05-14 At&T Bell Laboratories Mobile ion getterer for metal conductors
JPH03233972A (ja) * 1990-02-08 1991-10-17 Matsushita Electron Corp 半導体装置用電極およびその製造方法
JPH04226054A (ja) * 1990-03-02 1992-08-14 Toshiba Corp 多層配線構造を有する半導体装置及びその製造方法
US5470769A (en) * 1990-03-27 1995-11-28 Goldstar Co., Ltd. Process for the preparation of a thin film transistor
JPH04174541A (ja) * 1990-03-28 1992-06-22 Nec Corp 半導体集積回路及びその製造方法
US5126283A (en) * 1990-05-21 1992-06-30 Motorola, Inc. Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
JPH05198575A (ja) * 1991-05-01 1993-08-06 Kobe Steel Ltd 耐食性ＡｌまたはＡｌ合金材
US5495121A (en) * 1991-09-30 1996-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5565378A (en) * 1992-02-17 1996-10-15 Mitsubishi Denki Kabushiki Kaisha Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution
US5406121A (en) * 1992-07-31 1995-04-11 Nec Corporation Semiconductor device having improved interconnection wiring structure
KR0131179B1 (ko) * 1993-02-22 1998-04-14 슌뻬이 야마자끼 전자회로 제조프로세스
US5783483A (en) * 1993-02-24 1998-07-21 Intel Corporation Method of fabricating a barrier against metal diffusion
US5393703A (en) * 1993-11-12 1995-02-28 Motorola, Inc. Process for forming a conductive layer for semiconductor devices
US5382447A (en) * 1993-12-02 1995-01-17 International Business Machines Corporation Process for fabricating improved multilayer interconnect systems
US5434104A (en) * 1994-03-02 1995-07-18 Vlsi Technology, Inc. Method of using corrosion prohibiters in aluminum alloy films
US5711858A (en) * 1994-04-12 1998-01-27 International Business Machines Corporation Process for depositing a conductive thin film upon an integrated circuit substrate
US6335062B1 (en) * 1994-09-13 2002-01-01 The United States Of America As Represented By The Secretary Of The Navy Reactive oxygen-assisted ion implantation into metals and products made therefrom
JP3105409B2 (ja) * 1994-10-24 2000-10-30 シャープ株式会社 金属配線基板および半導体装置およびそれらの製造方法
JPH0917785A (ja) * 1995-06-30 1997-01-17 Sony Corp 半導体装置のアルミニウム系金属配線
US6040613A (en) * 1996-01-19 2000-03-21 Micron Technology, Inc. Antireflective coating and wiring line stack
US5851920A (en) * 1996-01-22 1998-12-22 Motorola, Inc. Method of fabrication of metallization system
JPH09296111A (ja) * 1996-04-30 1997-11-18 Toray Dow Corning Silicone Co Ltd マイクロエマルジョンおよび繊維処理剤
US5913146A (en) * 1997-03-18 1999-06-15 Lucent Technologies Inc. Semiconductor device having aluminum contacts or vias and method of manufacture therefor
US6657376B1 (en) 1999-06-01 2003-12-02 Micron Technology, Inc. Electron emission devices and field emission display devices having buffer layer of microcrystalline silicon
US6650043B1 (en) * 1999-07-20 2003-11-18 Micron Technology, Inc. Multilayer conductor structure for use in field emission display
US7052350B1 (en) * 1999-08-26 2006-05-30 Micron Technology, Inc. Field emission device having insulated column lines and method manufacture
US6710525B1 (en) 1999-10-19 2004-03-23 Candescent Technologies Corporation Electrode structure and method for forming electrode structure for a flat panel display
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US7371467B2 (en) * 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US20060013942A1 (en) * 2004-07-16 2006-01-19 Muffoletto Barry C Method for improving electrical conductivity of metals, metal alloys and metal oxides by ion beam implantation
US8237235B2 (en) * 2009-04-14 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-ceramic multilayer structure
CN104185365B (zh) * 2013-05-23 2018-06-26 比亚迪股份有限公司 一种线路板及其制备方法
US9953940B2 (en) * 2015-06-26 2018-04-24 International Business Machines Corporation Corrosion resistant aluminum bond pad structure

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL87258C (enExample) * 1969-01-15
DE1910736C3 (de) * 1969-03-03 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens
US3704166A (en) * 1969-06-30 1972-11-28 Ibm Method for improving adhesion between conductive layers and dielectrics
BE756685A (fr) * 1969-09-25 1971-03-25 Motorola Inc Procede pour empecher une reaction chimique entre l'aluminium et le bioxyde de silicium dans un dispositif
US3716469A (en) * 1970-12-17 1973-02-13 Cogar Corp Fabrication method for making an aluminum alloy having a high resistance to electromigration
US3702427A (en) * 1971-02-22 1972-11-07 Fairchild Camera Instr Co Electromigration resistant metallization for integrated circuits, structure and process
JPS4842034A (enExample) * 1971-09-27 1973-06-19
US3827949A (en) * 1972-03-29 1974-08-06 Ibm Anodic oxide passivated planar aluminum metallurgy system and method of producing
JPS4995592A (enExample) * 1973-01-12 1974-09-10
NZ179621A (en) * 1975-01-06 1978-04-28 Ciba Geigy Synergistic pharmaceutical compositions containing a betareceptor blocking compound and l-tryptophene or a salt there of
DE2621956A1 (de) * 1975-05-19 1976-12-02 Nat Semiconductor Corp Verfahren zur passivierung einer aluminiumschicht auf einem halbleiter- schaltungsbaustein
JPS5223281A (en) * 1975-08-15 1977-02-22 Nec Corp Method of manufacturing semiconductor device
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance
JPS52117551A (en) * 1976-03-29 1977-10-03 Mitsubishi Electric Corp Semiconductor device
JPS5317287A (en) * 1976-08-02 1978-02-17 Toshiba Corp Production of semiconductor device
DE2649773A1 (de) * 1976-10-29 1978-05-11 Bosch Gmbh Robert Halbleiteranordnung
JPS5533057A (en) * 1978-08-30 1980-03-08 Yamamoto Electric Ind Co Ltd Motor speed controller
JPS55120162A (en) * 1979-03-12 1980-09-16 Fujitsu Ltd Semiconductor device
JPS55138859A (en) * 1979-04-16 1980-10-30 Nec Corp Multilayer wiring type semiconductor device
EP0042926A1 (en) * 1980-07-01 1982-01-06 Rockwell International Corporation Aluminum to aluminum ohmic contacts, multilevel interconnections

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014211464A1 (de) * 2014-06-16 2015-12-17 Robert Bosch Gmbh Halbleitermodul mit einer elektrisch isolierten Wärmesenke

Also Published As

Publication number Publication date
US4433004A (en) 1984-02-21
US4561009A (en) 1985-12-24
DE3026026A1 (de) 1981-01-22

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
8128 New person/name/address of the agent

Representative=s name: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZ

8127 New person/name/address of the applicant

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee