DE2947764C2 - Speichereinheit mit zusätzlicher Schreibeinheit zur Speicherzellen-Prüfung - Google Patents

Speichereinheit mit zusätzlicher Schreibeinheit zur Speicherzellen-Prüfung

Info

Publication number
DE2947764C2
DE2947764C2 DE2947764A DE2947764A DE2947764C2 DE 2947764 C2 DE2947764 C2 DE 2947764C2 DE 2947764 A DE2947764 A DE 2947764A DE 2947764 A DE2947764 A DE 2947764A DE 2947764 C2 DE2947764 C2 DE 2947764C2
Authority
DE
Germany
Prior art keywords
memory
write
transistors
memory cell
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2947764A
Other languages
German (de)
English (en)
Other versions
DE2947764A1 (de
Inventor
Masao Tokyo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of DE2947764A1 publication Critical patent/DE2947764A1/de
Application granted granted Critical
Publication of DE2947764C2 publication Critical patent/DE2947764C2/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE2947764A 1978-11-27 1979-11-27 Speichereinheit mit zusätzlicher Schreibeinheit zur Speicherzellen-Prüfung Expired DE2947764C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14617678A JPS5589980A (en) 1978-11-27 1978-11-27 Semiconductor memory unit

Publications (2)

Publication Number Publication Date
DE2947764A1 DE2947764A1 (de) 1980-06-12
DE2947764C2 true DE2947764C2 (de) 1982-05-06

Family

ID=15401845

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2947764A Expired DE2947764C2 (de) 1978-11-27 1979-11-27 Speichereinheit mit zusätzlicher Schreibeinheit zur Speicherzellen-Prüfung

Country Status (3)

Country Link
US (1) US4267583A (OSRAM)
JP (1) JPS5589980A (OSRAM)
DE (1) DE2947764C2 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4022157A1 (de) * 1989-07-13 1991-01-24 Mitsubishi Electric Corp Statische halbleiterspeichereinrichtung und steuerungsverfahren fuer diese

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6047666B2 (ja) * 1981-01-29 1985-10-23 富士通株式会社 半導体記憶装置の書込み方式
US4612630A (en) * 1984-07-27 1986-09-16 Harris Corporation EEPROM margin testing design
JP2559028B2 (ja) * 1986-03-20 1996-11-27 富士通株式会社 半導体記憶装置
KR920003269B1 (ko) * 1990-05-04 1992-04-27 삼성전자 주식회사 듀얼 포트 메모리소자의 모우드 전환방법
US5367472A (en) * 1991-10-16 1994-11-22 Alps Electric Co., Ltd. Keyboard testing methods and apparatus
US5459733A (en) * 1992-03-20 1995-10-17 National Semiconductor Corporation Input/output checker for a memory array
US5883844A (en) * 1997-05-23 1999-03-16 Stmicroelectronics, Inc. Method of stress testing integrated circuit having memory and integrated circuit having stress tester for memory thereof
US6873540B2 (en) * 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
AU2002340795A1 (en) 2001-05-07 2002-11-18 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
JP4886160B2 (ja) * 2001-05-07 2012-02-29 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド セルフアセンブリによるポリマーフィルムを用いた記憶装置およびその製造方法
AU2002340793A1 (en) * 2001-05-07 2002-11-18 Coatue Corporation Molecular memory device
JP4731794B2 (ja) * 2001-05-07 2011-07-27 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド メモリ効果を有するスイッチ素子及び該素子をスイッチングさせる方法
WO2002091476A1 (en) 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Floating gate memory device using composite molecular material
KR100860134B1 (ko) 2001-08-13 2008-09-25 어드밴스드 마이크로 디바이시즈, 인코포레이티드 메모리 셀
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
US6858481B2 (en) * 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
KR100433407B1 (ko) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 업라이트형 진공청소기
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
TW577194B (en) * 2002-11-08 2004-02-21 Endpoints Technology Corp Digital adjustable chip oscillator
WO2011001562A1 (ja) 2009-06-30 2011-01-06 パナソニック株式会社 半導体集積回路
KR20190086175A (ko) * 2018-01-12 2019-07-22 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS588079B2 (ja) * 1974-03-29 1983-02-14 株式会社日立製作所 ハンドウタイメモリ
JPS50134738A (OSRAM) * 1974-04-15 1975-10-25
JPS5279738A (en) * 1975-12-26 1977-07-05 Hitachi Ltd Semiconductor memory unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4022157A1 (de) * 1989-07-13 1991-01-24 Mitsubishi Electric Corp Statische halbleiterspeichereinrichtung und steuerungsverfahren fuer diese

Also Published As

Publication number Publication date
DE2947764A1 (de) 1980-06-12
JPS631676B2 (OSRAM) 1988-01-13
US4267583A (en) 1981-05-12
JPS5589980A (en) 1980-07-08

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Legal Events

Date Code Title Description
OAM Search report available
OC Search report available
OD Request for examination
8125 Change of the main classification

Ipc: G11C 29/00

D2 Grant after examination