DE2915883C2 - Verfahren zum Anbringen einer epitaktischen Schicht - Google Patents
Verfahren zum Anbringen einer epitaktischen SchichtInfo
- Publication number
- DE2915883C2 DE2915883C2 DE2915883A DE2915883A DE2915883C2 DE 2915883 C2 DE2915883 C2 DE 2915883C2 DE 2915883 A DE2915883 A DE 2915883A DE 2915883 A DE2915883 A DE 2915883A DE 2915883 C2 DE2915883 C2 DE 2915883C2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- epitaxial layer
- layer
- support
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 51
- 238000005530 etching Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- DJHGAFSJWGLOIV-UHFFFAOYSA-K Arsenate3- Chemical compound [O-][As]([O-])([O-])=O DJHGAFSJWGLOIV-UHFFFAOYSA-K 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229940000489 arsenate Drugs 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7804268,A NL187414C (nl) | 1978-04-21 | 1978-04-21 | Werkwijze voor het aanbrengen van een epitaxiale laag. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2915883A1 DE2915883A1 (de) | 1979-10-31 |
| DE2915883C2 true DE2915883C2 (de) | 1987-01-22 |
Family
ID=19830695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2915883A Expired DE2915883C2 (de) | 1978-04-21 | 1979-04-19 | Verfahren zum Anbringen einer epitaktischen Schicht |
Country Status (8)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0671770B1 (en) * | 1993-02-09 | 2000-08-02 | GENERAL SEMICONDUCTOR, Inc. | Multilayer epitaxy for a silicon diode |
| JP6477210B2 (ja) | 2015-04-30 | 2019-03-06 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
| JP6358472B2 (ja) * | 2015-06-08 | 2018-07-18 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
| JP6447960B2 (ja) * | 2016-04-01 | 2019-01-09 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL288409A (US06811534-20041102-M00003.png) * | 1962-02-02 | |||
| DE2547692C3 (de) * | 1975-10-24 | 1979-10-31 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen einer Halbleiteranordnung |
-
1978
- 1978-04-21 NL NLAANVRAGE7804268,A patent/NL187414C/xx not_active IP Right Cessation
-
1979
- 1979-04-12 CA CA325,479A patent/CA1134059A/en not_active Expired
- 1979-04-12 AU AU46046/79A patent/AU523988B2/en not_active Ceased
- 1979-04-18 GB GB7913398A patent/GB2019644B/en not_active Expired
- 1979-04-18 JP JP4850279A patent/JPS54141560A/ja active Granted
- 1979-04-18 IT IT21949/79A patent/IT1112317B/it active
- 1979-04-19 DE DE2915883A patent/DE2915883C2/de not_active Expired
- 1979-04-20 FR FR7910090A patent/FR2423865A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54141560A (en) | 1979-11-02 |
| IT7921949A0 (it) | 1979-04-18 |
| IT1112317B (it) | 1986-01-13 |
| DE2915883A1 (de) | 1979-10-31 |
| AU523988B2 (en) | 1982-08-26 |
| JPS5538819B2 (US06811534-20041102-M00003.png) | 1980-10-07 |
| GB2019644A (en) | 1979-10-31 |
| AU4604679A (en) | 1979-10-25 |
| CA1134059A (en) | 1982-10-19 |
| NL7804268A (nl) | 1979-10-23 |
| NL187414C (nl) | 1991-09-16 |
| FR2423865A1 (fr) | 1979-11-16 |
| GB2019644B (en) | 1982-09-29 |
| FR2423865B1 (US06811534-20041102-M00003.png) | 1984-07-27 |
| NL187414B (nl) | 1991-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8126 | Change of the secondary classification |
Free format text: C30B 29/06 C30B 31/08 |
|
| 8110 | Request for examination paragraph 44 | ||
| 8128 | New person/name/address of the agent |
Representative=s name: NEHMZOW-DAVID, F., PAT.-ASS., 2000 HAMBURG |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |