DE2854073A1 - Feldeffekttransistor-anordnung sowie verfahren zu ihrer herstellung - Google Patents

Feldeffekttransistor-anordnung sowie verfahren zu ihrer herstellung

Info

Publication number
DE2854073A1
DE2854073A1 DE19782854073 DE2854073A DE2854073A1 DE 2854073 A1 DE2854073 A1 DE 2854073A1 DE 19782854073 DE19782854073 DE 19782854073 DE 2854073 A DE2854073 A DE 2854073A DE 2854073 A1 DE2854073 A1 DE 2854073A1
Authority
DE
Germany
Prior art keywords
zone
dopant
oxide layer
surface area
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19782854073
Other languages
German (de)
English (en)
Inventor
Arthur Douglas Ritchie
Shuichi Sato
Tadanori Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tektronix Inc
Original Assignee
Tektronix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tektronix Inc filed Critical Tektronix Inc
Publication of DE2854073A1 publication Critical patent/DE2854073A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H10D30/0287—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H10D30/0289—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/292—Non-planar channels of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H10P14/61—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
DE19782854073 1977-12-21 1978-12-14 Feldeffekttransistor-anordnung sowie verfahren zu ihrer herstellung Ceased DE2854073A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/862,715 US4217599A (en) 1977-12-21 1977-12-21 Narrow channel MOS devices and method of manufacturing

Publications (1)

Publication Number Publication Date
DE2854073A1 true DE2854073A1 (de) 1979-07-12

Family

ID=25339135

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782854073 Ceased DE2854073A1 (de) 1977-12-21 1978-12-14 Feldeffekttransistor-anordnung sowie verfahren zu ihrer herstellung

Country Status (7)

Country Link
US (1) US4217599A (cg-RX-API-DMAC10.html)
JP (1) JPS5491187A (cg-RX-API-DMAC10.html)
CA (1) CA1119733A (cg-RX-API-DMAC10.html)
DE (1) DE2854073A1 (cg-RX-API-DMAC10.html)
FR (1) FR2412942A1 (cg-RX-API-DMAC10.html)
GB (1) GB2011170B (cg-RX-API-DMAC10.html)
NL (1) NL7811920A (cg-RX-API-DMAC10.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4262298A (en) * 1979-09-04 1981-04-14 Burroughs Corporation Ram having a stabilized substrate bias and low-threshold narrow-width transfer gates
DE2947350A1 (de) * 1979-11-23 1981-05-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von mnos-speichertransistoren mit sehr kurzer kanallaenge in silizium-gate-technologie
US4370669A (en) * 1980-07-16 1983-01-25 General Motors Corporation Reduced source capacitance ring-shaped IGFET load transistor in mesa-type integrated circuit
US4654680A (en) * 1980-09-24 1987-03-31 Semiconductor Energy Laboratory Co., Ltd. Sidewall gate IGFET
IT1235693B (it) * 1989-05-02 1992-09-21 Sgs Thomson Microelectronics Transistore ad effetto di campo superficiale con regione di source e/o di drain scavate per dispositivi ulsi.
USRE35827E (en) * 1989-05-02 1998-06-23 Sgs-Thomson Microelectronics S.R.L. Surface field effect transistor with depressed source and/or drain areas for ULSI integrated devices
US6015737A (en) * 1991-07-26 2000-01-18 Denso Corporation Production method of a vertical type MOSFET
DE69223128T2 (de) * 1991-07-26 1998-07-09 Denso Corp Verfahren zur herstellung vertikaler mosfets
US6603173B1 (en) 1991-07-26 2003-08-05 Denso Corporation Vertical type MOSFET
US6261973B1 (en) * 1997-12-31 2001-07-17 Texas Instruments Incorporated Remote plasma nitridation to allow selectively etching of oxide

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49126281A (cg-RX-API-DMAC10.html) * 1973-04-04 1974-12-03
US3946419A (en) * 1973-06-27 1976-03-23 International Business Machines Corporation Field effect transistor structure for minimizing parasitic inversion and process for fabricating
JPS5222480A (en) * 1975-08-14 1977-02-19 Nippon Telegr & Teleph Corp <Ntt> Insulating gate field effect transistor
US4011105A (en) * 1975-09-15 1977-03-08 Mos Technology, Inc. Field inversion control for n-channel device integrated circuits
US4055444A (en) * 1976-01-12 1977-10-25 Texas Instruments Incorporated Method of making N-channel MOS integrated circuits
JPS6032989B2 (ja) * 1976-04-07 1985-07-31 松下電器産業株式会社 Ｍｏｓ型半導体装置の製造方法
US4029522A (en) * 1976-06-30 1977-06-14 International Business Machines Corporation Method to fabricate ion-implanted layers with abrupt edges to reduce the parasitic resistance of Schottky barrier fets and bipolar transistors
US4078947A (en) * 1976-08-05 1978-03-14 International Business Machines Corporation Method for forming a narrow channel length MOS field effect transistor
US4084175A (en) * 1976-09-30 1978-04-11 Research Corporation Double implanted planar mos device with v-groove and process of manufacture thereof
US4044452A (en) * 1976-10-06 1977-08-30 International Business Machines Corporation Process for making field effect and bipolar transistors on the same semiconductor chip
US4108686A (en) * 1977-07-22 1978-08-22 Rca Corp. Method of making an insulated gate field effect transistor by implanted double counterdoping
US4132998A (en) * 1977-08-29 1979-01-02 Rca Corp. Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate

Also Published As

Publication number Publication date
US4217599A (en) 1980-08-12
GB2011170A (en) 1979-07-04
JPS6318346B2 (cg-RX-API-DMAC10.html) 1988-04-18
FR2412942A1 (fr) 1979-07-20
JPS5491187A (en) 1979-07-19
NL7811920A (nl) 1979-06-25
GB2011170B (en) 1982-06-30
CA1119733A (en) 1982-03-09

Similar Documents

Publication Publication Date Title
DE60132994T2 (de) Verfahren zur herstellung eines leistungs-mosfets
DE69615458T2 (de) Dünnfilmtransistor über einem isolierten Halbleitersubstrat und Verfahren zur Herstellung
DE3437512C2 (de) Integrierte Halbleiterschaltung mit Isolationsbereichen und Verfahren zu ihrer Herstellung
DE2703877C2 (de) MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung
DE3011982C2 (cg-RX-API-DMAC10.html)
DE2253702C3 (de) Verfahren zur Herstellung eines Halbleiterbauelementes
DE2541548A1 (de) Isolierschicht-feldeffekttransistor und verfahren zu dessen herstellung
DE3334337A1 (de) Verfahren zur herstellung einer integrierten halbleitereinrichtung
EP0001574B1 (de) Halbleiteranordnung für Widerstandsstrukturen in hochintegrierten Schaltkreisen und Verfahren zur Herstellung dieser Halbleiteranordnung
DE2923995A1 (de) Verfahren zum herstellen von integrierten mos-schaltungen mit und ohne mnos-speichertransistoren in silizium-gate-technologie
DE2335799A1 (de) Sperrschicht-feldeffekttransistoren in dielektrisch isolierten mesas
EP0981155A2 (de) Verfahren zur Herstellung einer Halbleiter-Isolationsschicht und eines diese Halbleiter-Isolationsschicht enthaltenden Halbleiterbauelements
DE2546314A1 (de) Feldeffekt-transistorstruktur und verfahren zur herstellung
DE4042163A1 (de) Verfahren zur herstellung einer halbleitervorrichtung
DE19517002C2 (de) Halbleitervorrichtung und Verfahren zur Herstellung derselben
DE4221039C2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung mit einem vertikalen Halbleiterelement und einem weiteren Halbleiterbauelement
DE69231484T2 (de) Verfahren zur Herstellung von Isolationszonen des LOCOS-Typs für integrierte Schaltungen vom MOS-Typ
DE2420239A1 (de) Verfahren zur herstellung doppelt diffundierter lateraler transistoren
DE2447354A1 (de) Verfahren zur herstellung eines feldeffekttransistors
DE2854073A1 (de) Feldeffekttransistor-anordnung sowie verfahren zu ihrer herstellung
DE19618866B4 (de) Verfahren zur Herstellung einer Bauelementisolation in einem Halbleiterbauelement
DE3427293A1 (de) Vertikale mosfet-einrichtung
DE3133548C2 (cg-RX-API-DMAC10.html)
DE19853432A1 (de) Halbleiteranordnung und Verfahren zum Herstellen derselben
DE68916401T2 (de) Feldeffekttransistor auf einem Isolator und Verfahren zu seiner Herstellung.

Legal Events

Date Code Title Description
OAR Request for search filed
OB Request for examination as to novelty
OC Search report available
OD Request for examination
8131 Rejection