DE2833068A1 - Integrierte halbleitervorrichtung - Google Patents

Integrierte halbleitervorrichtung

Info

Publication number
DE2833068A1
DE2833068A1 DE19782833068 DE2833068A DE2833068A1 DE 2833068 A1 DE2833068 A1 DE 2833068A1 DE 19782833068 DE19782833068 DE 19782833068 DE 2833068 A DE2833068 A DE 2833068A DE 2833068 A1 DE2833068 A1 DE 2833068A1
Authority
DE
Germany
Prior art keywords
zone
semiconductor
transistor
conductivity type
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19782833068
Other languages
German (de)
English (en)
Other versions
DE2833068C2 (enExample
Inventor
Tadahiko Hotta
Terumoto Nonaka
Shin Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yamaha Corp
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Publication of DE2833068A1 publication Critical patent/DE2833068A1/de
Application granted granted Critical
Publication of DE2833068C2 publication Critical patent/DE2833068C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE19782833068 1977-07-27 1978-07-27 Integrierte halbleitervorrichtung Granted DE2833068A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9014677A JPS5425175A (en) 1977-07-27 1977-07-27 Integrated circuit device

Publications (2)

Publication Number Publication Date
DE2833068A1 true DE2833068A1 (de) 1979-02-08
DE2833068C2 DE2833068C2 (enExample) 1989-08-24

Family

ID=13990351

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782833068 Granted DE2833068A1 (de) 1977-07-27 1978-07-27 Integrierte halbleitervorrichtung

Country Status (3)

Country Link
US (1) US4205334A (enExample)
JP (1) JPS5425175A (enExample)
DE (1) DE2833068A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2939193A1 (de) * 1978-09-28 1980-04-30 Zaidan Hojin Handotai Kenkyu Statischer induktionstransistor und eine diesen transistor verwendende schaltung
DE3214566A1 (de) * 1981-04-21 1983-01-27 Nippon Gakki Seizo K.K., Hamamatsu, Shizuoka Integrierte halbleiteranordnung
US4661726A (en) * 1985-10-31 1987-04-28 Honeywell Inc. Utilizing a depletion mode FET operating in the triode region and a depletion mode FET operating in the saturation region
US4800172A (en) * 1987-02-09 1989-01-24 Kabushiki Kaisha Toshiba Manufacturing method for cascaded junction field effect transistor
US5338949A (en) * 1992-04-14 1994-08-16 U.S. Philips Corporation Semiconductor device having series-connected junction field effect transistors
US6037618A (en) * 1998-02-17 2000-03-14 Linear Integrated Systems, Inc. Intergrated field effect transistor device for high power and voltage amplification of RF signals

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145486A (en) * 1978-05-08 1979-11-13 Handotai Kenkyu Shinkokai Gaas semiconductor device
US4362981A (en) * 1980-09-12 1982-12-07 Kabushiki Kaisha Daini Seikosha Driving circuit for a stepping motor
US4568957A (en) * 1984-01-16 1986-02-04 Mcdonnell Douglas Corporation GaAs Complementary enhancement mode junction field effect transistor structures and method of fabrication
DE102005002023B4 (de) * 2005-01-15 2007-08-16 Atmel Germany Gmbh Halbleiterstruktur mit vertikalem JFET
US8130023B2 (en) * 2009-11-23 2012-03-06 Northrop Grumman Systems Corporation System and method for providing symmetric, efficient bi-directional power flow and power conditioning
FR3045937A1 (fr) 2015-12-21 2017-06-23 St Microelectronics Crolles 2 Sas Procede de fabrication d'un transistor jfet au sein d'un circuit integre et circuit integre correspondant.
US10903371B2 (en) * 2016-01-07 2021-01-26 Lawrence Livermore National Security, Llc Three dimensional vertically structured MISFET/MESFET
US11018253B2 (en) * 2016-01-07 2021-05-25 Lawrence Livermore National Security, Llc Three dimensional vertically structured electronic devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2220789A1 (de) * 1971-04-28 1972-11-16 Handotai Kenkyu Shinkokai Feldeffekttransistor
JPH05124184A (ja) * 1991-10-31 1993-05-21 Canon Inc インクジエツト記録装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4117587A (en) * 1973-11-30 1978-10-03 Matsushita Electronics Corporation Negative-resistance semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2220789A1 (de) * 1971-04-28 1972-11-16 Handotai Kenkyu Shinkokai Feldeffekttransistor
JPH05124184A (ja) * 1991-10-31 1993-05-21 Canon Inc インクジエツト記録装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"IBM TDB", Bd. 18, No. 6, Nov. 1975, S. 1760 u. 1761 *
"IEEE Trans. on El.Dev.", Nov. 1975, S. 1047-1049 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2939193A1 (de) * 1978-09-28 1980-04-30 Zaidan Hojin Handotai Kenkyu Statischer induktionstransistor und eine diesen transistor verwendende schaltung
DE3214566A1 (de) * 1981-04-21 1983-01-27 Nippon Gakki Seizo K.K., Hamamatsu, Shizuoka Integrierte halbleiteranordnung
US4807011A (en) * 1981-04-21 1989-02-21 Nippon Gakki Seizo Kabushiki Kaisha Semiconductor integrated circuit incorporating SITS
US4661726A (en) * 1985-10-31 1987-04-28 Honeywell Inc. Utilizing a depletion mode FET operating in the triode region and a depletion mode FET operating in the saturation region
US4800172A (en) * 1987-02-09 1989-01-24 Kabushiki Kaisha Toshiba Manufacturing method for cascaded junction field effect transistor
US5338949A (en) * 1992-04-14 1994-08-16 U.S. Philips Corporation Semiconductor device having series-connected junction field effect transistors
US6037618A (en) * 1998-02-17 2000-03-14 Linear Integrated Systems, Inc. Intergrated field effect transistor device for high power and voltage amplification of RF signals

Also Published As

Publication number Publication date
US4205334A (en) 1980-05-27
JPS5425175A (en) 1979-02-24
DE2833068C2 (enExample) 1989-08-24

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: YAMAHA CORP., HAMAMATSU, SHIZUOKA, JP

D2 Grant after examination
8364 No opposition during term of opposition