DE2806492A1 - Halbleiterbauelement und verfahren zu dessen herstellung - Google Patents

Halbleiterbauelement und verfahren zu dessen herstellung

Info

Publication number
DE2806492A1
DE2806492A1 DE19782806492 DE2806492A DE2806492A1 DE 2806492 A1 DE2806492 A1 DE 2806492A1 DE 19782806492 DE19782806492 DE 19782806492 DE 2806492 A DE2806492 A DE 2806492A DE 2806492 A1 DE2806492 A1 DE 2806492A1
Authority
DE
Germany
Prior art keywords
layer
passivation
silicon dioxide
particles
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19782806492
Other languages
German (de)
English (en)
Inventor
Walter Arthur Hicinbothem
Ming Liang Tarng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2806492A1 publication Critical patent/DE2806492A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19782806492 1977-02-24 1978-02-16 Halbleiterbauelement und verfahren zu dessen herstellung Ceased DE2806492A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77174977A 1977-02-24 1977-02-24

Publications (1)

Publication Number Publication Date
DE2806492A1 true DE2806492A1 (de) 1978-08-31

Family

ID=25092854

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782806492 Ceased DE2806492A1 (de) 1977-02-24 1978-02-16 Halbleiterbauelement und verfahren zu dessen herstellung

Country Status (10)

Country Link
JP (1) JPS53105979A (enrdf_load_stackoverflow)
BE (1) BE864271A (enrdf_load_stackoverflow)
DE (1) DE2806492A1 (enrdf_load_stackoverflow)
FR (1) FR2382095B1 (enrdf_load_stackoverflow)
GB (1) GB1552760A (enrdf_load_stackoverflow)
IN (1) IN147578B (enrdf_load_stackoverflow)
IT (1) IT1092729B (enrdf_load_stackoverflow)
PL (1) PL117841B1 (enrdf_load_stackoverflow)
SE (1) SE7801092L (enrdf_load_stackoverflow)
YU (1) YU42276B (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3021175A1 (de) * 1980-06-04 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum passivieren von siliciumbauelementen
FR2487576A1 (fr) * 1980-07-24 1982-01-29 Thomson Csf Procede de fabrication de diodes mesa glassivees
US4344985A (en) 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
US4420765A (en) 1981-05-29 1983-12-13 Rca Corporation Multi-layer passivant system
JPS60208886A (ja) * 1984-03-31 1985-10-21 株式会社東芝 電子部品の製造方法
US4826733A (en) * 1986-12-03 1989-05-02 Dow Corning Corporation Sin-containing coatings for electronic devices
FR2625839B1 (fr) * 1988-01-13 1991-04-26 Sgs Thomson Microelectronics Procede de passivation d'un circuit integre

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2513459A1 (de) * 1974-03-30 1975-10-09 Sony Corp Halbleiteranordnung und verfahren zu ihrer herstellung
DE2513945A1 (de) * 1974-04-19 1975-10-30 Rca Corp Verfahren zum passivieren der oberflaechen von halbleiterbauteilen
DE2600321A1 (de) * 1975-01-16 1976-07-22 Philips Nv Verfahren zur herstellung von halbleiteranordnungen, bei dem auf eine halbleiterscheibe ein glasueberzug angebracht wird, und durch dieses verfahren hergestellte halbleiteranordnungen

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1250099A (enrdf_load_stackoverflow) * 1969-04-14 1971-10-20
JPS6022497B2 (ja) * 1974-10-26 1985-06-03 ソニー株式会社 半導体装置
JPS6041458B2 (ja) * 1975-04-21 1985-09-17 ソニー株式会社 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2513459A1 (de) * 1974-03-30 1975-10-09 Sony Corp Halbleiteranordnung und verfahren zu ihrer herstellung
DE2513945A1 (de) * 1974-04-19 1975-10-30 Rca Corp Verfahren zum passivieren der oberflaechen von halbleiterbauteilen
DE2600321A1 (de) * 1975-01-16 1976-07-22 Philips Nv Verfahren zur herstellung von halbleiteranordnungen, bei dem auf eine halbleiterscheibe ein glasueberzug angebracht wird, und durch dieses verfahren hergestellte halbleiteranordnungen

Also Published As

Publication number Publication date
JPS5626981B2 (enrdf_load_stackoverflow) 1981-06-22
SE7801092L (sv) 1978-08-25
PL117841B1 (en) 1981-08-31
JPS53105979A (en) 1978-09-14
IT7819175A0 (it) 1978-01-11
IT1092729B (it) 1985-07-12
YU42276B (en) 1988-08-31
IN147578B (enrdf_load_stackoverflow) 1980-04-19
PL204821A1 (pl) 1978-11-06
BE864271A (fr) 1978-06-16
GB1552760A (en) 1979-09-19
FR2382095A1 (fr) 1978-09-22
YU19278A (en) 1982-06-30
FR2382095B1 (fr) 1985-10-18

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8131 Rejection