DE2801293A1 - Inverterschaltkreis mit feldeffekttransistoren - Google Patents
Inverterschaltkreis mit feldeffekttransistorenInfo
- Publication number
- DE2801293A1 DE2801293A1 DE19782801293 DE2801293A DE2801293A1 DE 2801293 A1 DE2801293 A1 DE 2801293A1 DE 19782801293 DE19782801293 DE 19782801293 DE 2801293 A DE2801293 A DE 2801293A DE 2801293 A1 DE2801293 A1 DE 2801293A1
- Authority
- DE
- Germany
- Prior art keywords
- gate
- field effect
- drain
- inverter circuit
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005669 field effect Effects 0.000 title claims description 17
- 230000003068 static effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
Landscapes
- Logic Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76080677A | 1977-01-19 | 1977-01-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2801293A1 true DE2801293A1 (de) | 1978-07-20 |
Family
ID=25060249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19782801293 Withdrawn DE2801293A1 (de) | 1977-01-19 | 1978-01-13 | Inverterschaltkreis mit feldeffekttransistoren |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | UST979006I4 (en, 2012) |
| JP (1) | JPS5390880A (en, 2012) |
| DE (1) | DE2801293A1 (en, 2012) |
| FR (1) | FR2378356A1 (en, 2012) |
| IT (1) | IT1114163B (en, 2012) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4546453A (en) * | 1982-06-22 | 1985-10-08 | Motorola, Inc. | Four-state ROM cell with increased differential between states |
-
1977
- 1977-08-31 JP JP10373477A patent/JPS5390880A/ja active Pending
- 1977-09-20 IT IT27707/77A patent/IT1114163B/it active
- 1977-12-09 FR FR7737953A patent/FR2378356A1/fr active Granted
-
1978
- 1978-01-13 DE DE19782801293 patent/DE2801293A1/de not_active Withdrawn
- 1978-06-28 US US05/920,026 patent/UST979006I4/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| UST979006I4 (en) | 1979-02-06 |
| IT1114163B (it) | 1986-01-27 |
| FR2378356B1 (en, 2012) | 1980-12-19 |
| FR2378356A1 (fr) | 1978-08-18 |
| JPS5390880A (en) | 1978-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2752473A1 (de) | Gegentakt-treiberschaltung | |
| DE3301648A1 (de) | Misfet mit eingangsverstaerker | |
| DE2424947C2 (de) | Wanderwellen-Feldeffekttransistor | |
| DE102007060031A1 (de) | Halbleitervorrichtung | |
| EP0104616A2 (de) | Statische Speicherzelle in Zwei-Kanal-Technik | |
| DE3240189A1 (de) | Aus feldeffekttransistoren mit isoliertem gate bestehender (igfet)-schaltkreis | |
| DE1942420C3 (de) | Antivalenz/ Äquivalenz-Schaltung mit Feldeffekt-Transistoren | |
| DE2835692C3 (de) | Binäres logisches ODER-Glied für programmierte logische Anordnungen | |
| DE2201028B2 (de) | Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens | |
| DE2809966A1 (de) | Feldeffekttransistorschaltung mit verbesserten betriebseigenschaften | |
| DE69314964T2 (de) | Nichtflüchtige Speicherzelle mit zwei Polysiliziumebenen | |
| DE2153284B2 (de) | Schaltungsanordnung zur Einstellung gewählter Feldeffektbauelemente einer Speichermatrix ohne Störung der nicht gewählten Elemente | |
| DE3244322A1 (de) | Schnell arbeitender analog/digital-umsetzer | |
| DE2301855C3 (de) | Schaltungsanordnung mit Feldeffekttransistoren zur Pegelanpassung | |
| DE112016006634T5 (de) | Anliegender bodykontakt für soi-transistor | |
| DE2754987A1 (de) | Leistungslose halbleiter-speichervorrichtung | |
| DE7141390U (de) | Halbleiteranordnung insbesondere feldeffekttransistor mit diffundierten schutzbereichen und/oder isolierenden torbereichen | |
| DE2653484A1 (de) | Integrierbarer konstantwiderstand | |
| DE1935862B2 (de) | Kettenverstaerker mit feld effekt transistoren | |
| DE2801293A1 (de) | Inverterschaltkreis mit feldeffekttransistoren | |
| DE2128536C3 (de) | Halbleiteranordnung aus zwei Feldeffekttransistoren von gleichem Aufbau | |
| DE2543615A1 (de) | Regenerierstufe fuer ladungsverschiebeanordnungen | |
| DE2733674A1 (de) | Rauscharme eingangsschaltung fuer ladungsgekoppelte schaltungsanordnungen | |
| DE2348246A1 (de) | Ladungsverstaerker | |
| DE2445079A1 (de) | Fet mit floatendem, isoliertem gate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |