DE2750395A1 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE2750395A1
DE2750395A1 DE19772750395 DE2750395A DE2750395A1 DE 2750395 A1 DE2750395 A1 DE 2750395A1 DE 19772750395 DE19772750395 DE 19772750395 DE 2750395 A DE2750395 A DE 2750395A DE 2750395 A1 DE2750395 A1 DE 2750395A1
Authority
DE
Germany
Prior art keywords
implant
zone
storage
substrate
arrangement according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19772750395
Other languages
German (de)
English (en)
Inventor
Jun Al F Tasch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE2750395A1 publication Critical patent/DE2750395A1/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
DE19772750395 1976-11-10 1977-11-10 Halbleiterspeicheranordnung Ceased DE2750395A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/740,528 US4164751A (en) 1976-11-10 1976-11-10 High capacity dynamic ram cell

Publications (1)

Publication Number Publication Date
DE2750395A1 true DE2750395A1 (de) 1978-05-11

Family

ID=24976890

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772750395 Ceased DE2750395A1 (de) 1976-11-10 1977-11-10 Halbleiterspeicheranordnung

Country Status (6)

Country Link
US (1) US4164751A (enExample)
JP (1) JPS5368043A (enExample)
DE (1) DE2750395A1 (enExample)
FR (1) FR2371042A1 (enExample)
GB (1) GB1591428A (enExample)
NL (1) NL7712341A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2756855A1 (de) * 1976-12-20 1978-07-06 Texas Instruments Inc Verfahren zum herstellen einer matrix aus speicherzellen mit hoher speicherkapazitaet
EP0021217A1 (de) * 1979-06-29 1981-01-07 Siemens Aktiengesellschaft Dynamische Halbleiter-Speicherzelle und Verfahren zu ihrer Herstellung
DE3027175A1 (de) * 1980-07-17 1982-02-11 Siemens AG, 1000 Berlin und 8000 München Anordnung zur verringerung der strahlungsempfindlichkeit von in integrierter mos-schaltkreistechnik ausgefuehrten speicherzellen

Families Citing this family (58)

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US4392210A (en) * 1978-08-28 1983-07-05 Mostek Corporation One transistor-one capacitor memory cell
DE2837877C2 (de) * 1978-08-30 1987-04-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines MOS-integrierten Halbleiterspeichers
US4492973A (en) * 1978-12-25 1985-01-08 Tokyo Shibaura Denki Kabushiki Kaisha MOS Dynamic memory cells and method of fabricating the same
DE3065928D1 (en) * 1979-01-25 1984-01-26 Nec Corp Semiconductor memory device
JPS55107255A (en) * 1979-02-12 1980-08-16 Mitsubishi Electric Corp Substrate potential generating circuit device
US4592130A (en) * 1979-03-26 1986-06-03 Hughes Aircraft Company Method of fabricating a CCD read only memory utilizing dual-level junction formation
US4903097A (en) * 1979-03-26 1990-02-20 Hughes Aircraft Company CCD read only memory
US4313253A (en) * 1979-07-30 1982-02-02 Burroughs Corporation Method of fabricating a charge transfer channel covered by a stepped insulating layer
US4482908A (en) * 1979-07-30 1984-11-13 Burroughs Corporation High capacity memory cell having a charge transfer channel covered by a stepped insulating layer
JPS5623771A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Semiconductor memory
JPS5826829B2 (ja) * 1979-08-30 1983-06-06 富士通株式会社 ダイナミックメモリセルの製造方法
US4597805A (en) * 1979-10-11 1986-07-01 Texas Instruments Incorporated Making guard ring for reducing pattern sensitivity in MOS/LSI dynamic RAM
JPS5696854A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Semiconductor memory device
US4433257A (en) * 1980-03-03 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Voltage supply for operating a plurality of changing transistors in a manner which reduces minority carrier disruption of adjacent memory cells
US5109258A (en) * 1980-05-07 1992-04-28 Texas Instruments Incorporated Memory cell made by selective oxidation of polysilicon
US4457066A (en) * 1980-10-15 1984-07-03 Texas Instruments Incorporated Method of making single-level polysilicon dynamic memory array
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
US4352236A (en) * 1981-07-24 1982-10-05 Intel Corporation Double field oxidation process
US4535349A (en) * 1981-12-31 1985-08-13 International Business Machines Corporation Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing
US4887135A (en) * 1982-02-09 1989-12-12 American Telephone And Telegraph Company, At&T Bell Laboratories Dual level polysilicon single transistor-capacitor memory array
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ
US4641165A (en) * 1982-04-28 1987-02-03 Tokyo Shibaura Denki Kabushiki Kaisha Dynamic memory device with an RC circuit for inhibiting the effects of alpha particle radiation
US4542481A (en) * 1983-01-31 1985-09-17 International Business Machines Corporation One-device random access memory cell having enhanced capacitance
US5170234A (en) * 1984-07-03 1992-12-08 Texas Instruments Incorporated High density dynamic RAM with trench capacitor
USRE33261E (en) * 1984-07-03 1990-07-10 Texas Instruments, Incorporated Trench capacitor for high density dynamic RAM
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
JPS62141756A (ja) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp 半導体記憶装置
KR890001957B1 (ko) * 1986-08-22 1989-06-03 삼성전자 주식회사 디램셀의 제조방법
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
CA1340340C (en) 1987-06-02 1999-01-26 Joseph T. Evans, Jr. Non-volatile memory circuit using ferroelectric capacitor storage element
US4914627A (en) * 1987-07-02 1990-04-03 Ramtron Corporation One transistor memory cell with programmable capacitance divider
US4910708A (en) * 1987-07-02 1990-03-20 Ramtron Corporation Dram with programmable capacitance divider
US4853893A (en) * 1987-07-02 1989-08-01 Ramtron Corporation Data storage device and method of using a ferroelectric capacitance divider
US4918654A (en) * 1987-07-02 1990-04-17 Ramtron Corporation SRAM with programmable capacitance divider
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
US5266821A (en) * 1988-05-31 1993-11-30 Micron Technology, Inc. Chip decoupling capacitor
US5307309A (en) * 1988-05-31 1994-04-26 Micron Technology, Inc. Memory module having on-chip surge capacitors
US5687109A (en) * 1988-05-31 1997-11-11 Micron Technology, Inc. Integrated circuit module having on-chip surge capacitors
US5032892A (en) * 1988-05-31 1991-07-16 Micron Technology, Inc. Depletion mode chip decoupling capacitor
US6124625A (en) 1988-05-31 2000-09-26 Micron Technology, Inc. Chip decoupling capacitor
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
JP2503621B2 (ja) * 1989-01-23 1996-06-05 日本電気株式会社 半導体装置の製造方法
US5465249A (en) * 1991-11-26 1995-11-07 Cree Research, Inc. Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
US5270964A (en) * 1992-05-19 1993-12-14 Sun Microsystems, Inc. Single in-line memory module
US5655113A (en) * 1994-07-05 1997-08-05 Monolithic System Technology, Inc. Resynchronization circuit for a memory system and method of operating same
US6114756A (en) 1998-04-01 2000-09-05 Micron Technology, Inc. Interdigitated capacitor design for integrated circuit leadframes
US6414391B1 (en) 1998-06-30 2002-07-02 Micron Technology, Inc. Module assembly for stacked BGA packages with a common bus bar in the assembly
JP3678212B2 (ja) * 2002-05-20 2005-08-03 ウシオ電機株式会社 超高圧水銀ランプ
US6755700B2 (en) * 2002-11-12 2004-06-29 Modevation Enterprises Inc. Reset speed control for watercraft
US7274347B2 (en) * 2003-06-27 2007-09-25 Texas Instruments Incorporated Prevention of charge accumulation in micromirror devices through bias inversion
US7375873B2 (en) * 2005-02-28 2008-05-20 Texas Instruments Incorporated Method of repairing micromirrors in spatial light modulators
US20060193028A1 (en) * 2005-02-28 2006-08-31 Satyadev Patel Method of repairing micromirrors in spatial light modulators

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
US3740732A (en) * 1971-08-12 1973-06-19 Texas Instruments Inc Dynamic data storage cell
US3996655A (en) * 1973-12-14 1976-12-14 Texas Instruments Incorporated Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product
JPS51114079A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Construction of semiconductor memory device
US4012757A (en) * 1975-05-05 1977-03-15 Intel Corporation Contactless random-access memory cell and cell pair
US4003036A (en) * 1975-10-23 1977-01-11 American Micro-Systems, Inc. Single IGFET memory cell with buried storage element
US4060738A (en) * 1976-03-03 1977-11-29 Texas Instruments Incorporated Charge coupled device random access memory

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE Journal of Solid-State Circuits, Vol. SC-11, No. 1, Fev. 1976, S. 58-63 *
IEEE Transactions on Electron Devices Oct. 1976, S. 1187-1189 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2756855A1 (de) * 1976-12-20 1978-07-06 Texas Instruments Inc Verfahren zum herstellen einer matrix aus speicherzellen mit hoher speicherkapazitaet
EP0021217A1 (de) * 1979-06-29 1981-01-07 Siemens Aktiengesellschaft Dynamische Halbleiter-Speicherzelle und Verfahren zu ihrer Herstellung
DE3027175A1 (de) * 1980-07-17 1982-02-11 Siemens AG, 1000 Berlin und 8000 München Anordnung zur verringerung der strahlungsempfindlichkeit von in integrierter mos-schaltkreistechnik ausgefuehrten speicherzellen

Also Published As

Publication number Publication date
GB1591428A (en) 1981-06-24
FR2371042B1 (enExample) 1984-09-21
US4164751A (en) 1979-08-14
FR2371042A1 (fr) 1978-06-09
JPS5368043A (en) 1978-06-17
NL7712341A (nl) 1978-05-12

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8131 Rejection