DE2743299A1 - Ladungskopplungsanordnung - Google Patents
LadungskopplungsanordnungInfo
- Publication number
- DE2743299A1 DE2743299A1 DE19772743299 DE2743299A DE2743299A1 DE 2743299 A1 DE2743299 A1 DE 2743299A1 DE 19772743299 DE19772743299 DE 19772743299 DE 2743299 A DE2743299 A DE 2743299A DE 2743299 A1 DE2743299 A1 DE 2743299A1
- Authority
- DE
- Germany
- Prior art keywords
- areas
- conductive material
- layer
- semiconductor
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000010168 coupling process Methods 0.000 title description 11
- 238000005859 coupling reaction Methods 0.000 title description 11
- 230000008878 coupling Effects 0.000 title description 10
- 239000004065 semiconductor Substances 0.000 claims description 36
- 239000004020 conductor Substances 0.000 claims description 30
- 239000011810 insulating material Substances 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 2
- 238000010292 electrical insulation Methods 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 2
- 238000013461 design Methods 0.000 description 8
- 238000003491 array Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/01—Manufacture or treatment
- H10D44/041—Manufacture or treatment having insulated gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
- H10D44/474—Two-phase CCD
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/732,614 US4097885A (en) | 1976-10-15 | 1976-10-15 | Compact, two-phase charge-coupled-device structure utilizing multiple layers of conductive material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2743299A1 true DE2743299A1 (de) | 1978-04-20 |
Family
ID=24944271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772743299 Withdrawn DE2743299A1 (de) | 1976-10-15 | 1977-09-27 | Ladungskopplungsanordnung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4097885A (forum.php) |
| JP (1) | JPS5349961A (forum.php) |
| CA (1) | CA1111137A (forum.php) |
| DE (1) | DE2743299A1 (forum.php) |
| FR (1) | FR2368144A1 (forum.php) |
| GB (1) | GB1575690A (forum.php) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4385432A (en) * | 1978-05-18 | 1983-05-31 | Texas Instruments Incorporated | Closely-spaced double level conductors for MOS read only |
| US4377904A (en) * | 1978-10-10 | 1983-03-29 | Texas Instruments Incorporated | Method of fabricating a narrow band-gap semiconductor CCD imaging device |
| US4231149A (en) * | 1978-10-10 | 1980-11-04 | Texas Instruments Incorporated | Narrow band-gap semiconductor CCD imaging device and method of fabrication |
| US4234362A (en) * | 1978-11-03 | 1980-11-18 | International Business Machines Corporation | Method for forming an insulator between layers of conductive material |
| JPS56138951A (en) * | 1980-03-31 | 1981-10-29 | Fujitsu Ltd | Manufacture of semiconductor memory device |
| NL8303268A (nl) * | 1983-09-23 | 1985-04-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd door toepassing van een dergelijke werkwijze. |
| DD253709A1 (de) * | 1986-09-04 | 1988-01-27 | Werk Fernsehelektronik Veb | Register mit kleinstem raster |
| JPH02266537A (ja) * | 1989-04-07 | 1990-10-31 | Mitsubishi Electric Corp | 電荷転送素子 |
| JP2642523B2 (ja) * | 1991-03-19 | 1997-08-20 | 株式会社東芝 | 電荷結合素子を持つ半導体集積回路装置の製造方法 |
| US6218686B1 (en) | 1995-12-28 | 2001-04-17 | Samsung Electronics Co. Ltd. | Charge coupled devices |
| KR0165326B1 (ko) * | 1995-12-28 | 1998-12-15 | 김광호 | 전하전송소자 및 그 제조방법 |
| KR100268440B1 (ko) | 1998-09-21 | 2000-10-16 | 윤종용 | 고감도 고체 촬상 장치 |
| KR20010001327A (ko) * | 1999-06-03 | 2001-01-05 | 김영환 | 전하 결합 소자 |
| JP2004006671A (ja) * | 2002-03-22 | 2004-01-08 | Sanyo Electric Co Ltd | 電荷結合素子およびその製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3795847A (en) * | 1973-03-26 | 1974-03-05 | Gen Electric | Method and apparatus for storing and transferring information |
| US3967306A (en) * | 1973-08-01 | 1976-06-29 | Trw Inc. | Asymmetrical well charge coupled device |
| US3931674A (en) * | 1974-02-08 | 1976-01-13 | Fairchild Camera And Instrument Corporation | Self aligned CCD element including two levels of electrodes and method of manufacture therefor |
| US3909925A (en) * | 1974-05-06 | 1975-10-07 | Telex Computer Products | N-Channel charge coupled device fabrication process |
| US3943543A (en) * | 1974-07-26 | 1976-03-09 | Texas Instruments Incorporated | Three level electrode configuration for three phase charge coupled device |
| JPS51138175A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Method of manufacturing charge coupled device |
-
1976
- 1976-10-15 US US05/732,614 patent/US4097885A/en not_active Expired - Lifetime
-
1977
- 1977-07-04 CA CA281,899A patent/CA1111137A/en not_active Expired
- 1977-07-07 GB GB28582/77A patent/GB1575690A/en not_active Expired
- 1977-08-31 JP JP10375777A patent/JPS5349961A/ja active Granted
- 1977-09-27 DE DE19772743299 patent/DE2743299A1/de not_active Withdrawn
- 1977-10-13 FR FR7730866A patent/FR2368144A1/fr active Granted
Non-Patent Citations (1)
| Title |
|---|
| NICHTS-ERMITTELT * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2368144A1 (fr) | 1978-05-12 |
| JPS5514545B2 (forum.php) | 1980-04-17 |
| JPS5349961A (en) | 1978-05-06 |
| FR2368144B1 (forum.php) | 1983-09-09 |
| CA1111137A (en) | 1981-10-20 |
| US4097885A (en) | 1978-06-27 |
| GB1575690A (en) | 1980-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3788499T2 (de) | Halbleiter-Grabenkondensator-Struktur. | |
| DE2954481C2 (de) | Leistungs-mosfet-anordnung. | |
| DE69530232T2 (de) | Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung derselben | |
| DE19611438B4 (de) | Flash-EEPROM-Speicherzelle mit zwei Floatinggate-Elektroden und Verfahren zu deren Herstellung | |
| DE2502235A1 (de) | Ladungskopplungs-halbleiteranordnung | |
| DE2312413B2 (de) | Verfahren zur herstellung eines matrixschaltkreises | |
| EP0024311A2 (de) | Verfahren zum Herstellen eines hochintegrierten Festwertspeichers | |
| DE10353387A1 (de) | Leistungstransistoranordnung und Verfahren zu deren Herstellung | |
| DE2703877A1 (de) | Mis-feldeffekttransistor mit kurzer kanallaenge | |
| DE69505348T2 (de) | Hochspannungs-MOSFET mit Feldplatten-Elektrode und Verfahren zur Herstellung | |
| DE2743299A1 (de) | Ladungskopplungsanordnung | |
| DE19501557A1 (de) | Halbleitervorrichtung und Verfahren zu deren Herstellung | |
| DE2454705A1 (de) | Ladungskopplungsanordnung | |
| DE69226223T2 (de) | Kontaktausrichtung für Festwertspeicher | |
| DE68905487T2 (de) | Verfahren zur herstellung einer integrierten schaltung mit bauelementen, die gates auf zwei ebenen enthalten. | |
| DE69202634T2 (de) | Feldemissionsvorrichtung und Verfahren zur Herstellung. | |
| DE2453279C3 (de) | Halbleiteranordnung | |
| DE69401243T2 (de) | Feldemissionsvorrichtung mit Kleinradiuskathode und Herstellungsverfahren dieser Vorrichtung | |
| DE2410628A1 (de) | Ladungsgekoppelte halbleiteranordnung | |
| DE3940388C2 (forum.php) | ||
| DE2746335C2 (forum.php) | ||
| DE2645014C3 (de) | Verfahren zur Herstellung einer integrierten MOS-Schaltungsstrukrur mit doppelten Schichten aus polykristallinem Silizium auf einem Silizium-Substrat | |
| DE2556668A1 (de) | Halbleiter-speichervorrichtung | |
| EP0019722A1 (de) | Integrierte Ladungsverschiebe-Mikroschaltung | |
| DE2342923C2 (de) | Verfahren zur Herstellung einer Zweiphasen-Ladungsverschlebeanordnung und nach diesem Verfahren hergestellte Zweiphasen-Ladungs Verschiebeanordnung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: H01L 29/66 |
|
| 8139 | Disposal/non-payment of the annual fee |