JPS5349961A - Semiconductor element structure and method of producing same - Google Patents

Semiconductor element structure and method of producing same

Info

Publication number
JPS5349961A
JPS5349961A JP10375777A JP10375777A JPS5349961A JP S5349961 A JPS5349961 A JP S5349961A JP 10375777 A JP10375777 A JP 10375777A JP 10375777 A JP10375777 A JP 10375777A JP S5349961 A JPS5349961 A JP S5349961A
Authority
JP
Japan
Prior art keywords
semiconductor element
element structure
producing same
producing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10375777A
Other languages
English (en)
Other versions
JPS5514545B2 (ja
Inventor
Robaato Uorushiyu Roido
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of JPS5349961A publication Critical patent/JPS5349961A/ja
Publication of JPS5514545B2 publication Critical patent/JPS5514545B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
JP10375777A 1976-10-15 1977-08-31 Semiconductor element structure and method of producing same Granted JPS5349961A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/732,614 US4097885A (en) 1976-10-15 1976-10-15 Compact, two-phase charge-coupled-device structure utilizing multiple layers of conductive material

Publications (2)

Publication Number Publication Date
JPS5349961A true JPS5349961A (en) 1978-05-06
JPS5514545B2 JPS5514545B2 (ja) 1980-04-17

Family

ID=24944271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10375777A Granted JPS5349961A (en) 1976-10-15 1977-08-31 Semiconductor element structure and method of producing same

Country Status (6)

Country Link
US (1) US4097885A (ja)
JP (1) JPS5349961A (ja)
CA (1) CA1111137A (ja)
DE (1) DE2743299A1 (ja)
FR (1) FR2368144A1 (ja)
GB (1) GB1575690A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56138951A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Manufacture of semiconductor memory device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4385432A (en) * 1978-05-18 1983-05-31 Texas Instruments Incorporated Closely-spaced double level conductors for MOS read only
US4377904A (en) * 1978-10-10 1983-03-29 Texas Instruments Incorporated Method of fabricating a narrow band-gap semiconductor CCD imaging device
US4231149A (en) * 1978-10-10 1980-11-04 Texas Instruments Incorporated Narrow band-gap semiconductor CCD imaging device and method of fabrication
US4234362A (en) * 1978-11-03 1980-11-18 International Business Machines Corporation Method for forming an insulator between layers of conductive material
NL8303268A (nl) * 1983-09-23 1985-04-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd door toepassing van een dergelijke werkwijze.
DD253709A1 (de) * 1986-09-04 1988-01-27 Werk Fernsehelektronik Veb Register mit kleinstem raster
JPH02266537A (ja) * 1989-04-07 1990-10-31 Mitsubishi Electric Corp 電荷転送素子
JP2642523B2 (ja) * 1991-03-19 1997-08-20 株式会社東芝 電荷結合素子を持つ半導体集積回路装置の製造方法
KR0165326B1 (ko) * 1995-12-28 1998-12-15 김광호 전하전송소자 및 그 제조방법
US6218686B1 (en) 1995-12-28 2001-04-17 Samsung Electronics Co. Ltd. Charge coupled devices
KR100268440B1 (ko) 1998-09-21 2000-10-16 윤종용 고감도 고체 촬상 장치
KR20010001327A (ko) * 1999-06-03 2001-01-05 김영환 전하 결합 소자
JP2004006671A (ja) * 2002-03-22 2004-01-08 Sanyo Electric Co Ltd 電荷結合素子およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51138175A (en) * 1975-05-26 1976-11-29 Fujitsu Ltd Method of manufacturing charge coupled device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795847A (en) * 1973-03-26 1974-03-05 Gen Electric Method and apparatus for storing and transferring information
US3967306A (en) * 1973-08-01 1976-06-29 Trw Inc. Asymmetrical well charge coupled device
US3931674A (en) * 1974-02-08 1976-01-13 Fairchild Camera And Instrument Corporation Self aligned CCD element including two levels of electrodes and method of manufacture therefor
US3909925A (en) * 1974-05-06 1975-10-07 Telex Computer Products N-Channel charge coupled device fabrication process
US3943543A (en) * 1974-07-26 1976-03-09 Texas Instruments Incorporated Three level electrode configuration for three phase charge coupled device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51138175A (en) * 1975-05-26 1976-11-29 Fujitsu Ltd Method of manufacturing charge coupled device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56138951A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Manufacture of semiconductor memory device
JPS6317229B2 (ja) * 1980-03-31 1988-04-13 Fujitsu Ltd

Also Published As

Publication number Publication date
FR2368144A1 (fr) 1978-05-12
CA1111137A (en) 1981-10-20
DE2743299A1 (de) 1978-04-20
FR2368144B1 (ja) 1983-09-09
JPS5514545B2 (ja) 1980-04-17
GB1575690A (en) 1980-09-24
US4097885A (en) 1978-06-27

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