DE2728771C2 - Verfahren zur epitaktischen Ablagerung einer Schicht aus Verbindungshalbleitermaterial - Google Patents

Verfahren zur epitaktischen Ablagerung einer Schicht aus Verbindungshalbleitermaterial

Info

Publication number
DE2728771C2
DE2728771C2 DE2728771A DE2728771A DE2728771C2 DE 2728771 C2 DE2728771 C2 DE 2728771C2 DE 2728771 A DE2728771 A DE 2728771A DE 2728771 A DE2728771 A DE 2728771A DE 2728771 C2 DE2728771 C2 DE 2728771C2
Authority
DE
Germany
Prior art keywords
deposition
current density
value
liquid phase
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2728771A
Other languages
German (de)
English (en)
Other versions
DE2728771A1 (de
Inventor
Elie Herouville Andre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2728771A1 publication Critical patent/DE2728771A1/de
Application granted granted Critical
Publication of DE2728771C2 publication Critical patent/DE2728771C2/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/103—Current controlled or induced growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE2728771A 1976-07-09 1977-06-25 Verfahren zur epitaktischen Ablagerung einer Schicht aus Verbindungshalbleitermaterial Expired DE2728771C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7621107A FR2358021A1 (fr) 1976-07-09 1976-07-09 Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide

Publications (2)

Publication Number Publication Date
DE2728771A1 DE2728771A1 (de) 1978-01-12
DE2728771C2 true DE2728771C2 (de) 1986-07-24

Family

ID=9175520

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2728771A Expired DE2728771C2 (de) 1976-07-09 1977-06-25 Verfahren zur epitaktischen Ablagerung einer Schicht aus Verbindungshalbleitermaterial

Country Status (5)

Country Link
US (1) US4133705A (enExample)
JP (1) JPS538563A (enExample)
DE (1) DE2728771C2 (enExample)
FR (1) FR2358021A1 (enExample)
GB (1) GB1581457A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4381598A (en) * 1981-06-11 1983-05-03 General Electric Company Method of making anode and cathode connections for electromigration
US4549912A (en) * 1981-06-11 1985-10-29 General Electric Company Anode and cathode connections for the practice of electromigration
EP0140565B1 (en) * 1983-09-19 1989-08-23 Fujitsu Limited Method for growing multicomponent compound semiconductor crystals
US6090651A (en) * 1999-11-05 2000-07-18 Lsi Logic Corporation Depletion free polysilicon gate electrodes
US11140838B2 (en) 2017-08-10 2021-10-12 Valmont Industries, Inc. System and method for variable rate, high speed irrigation control

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2842467A (en) * 1954-04-28 1958-07-08 Ibm Method of growing semi-conductors
US2999776A (en) * 1955-01-13 1961-09-12 Siemens Ag Method of producing differentiated doping zones in semiconductor crystals
BE562932A (enExample) * 1957-01-23
NL301226A (enExample) * 1962-12-03
GB1034503A (en) * 1963-05-14 1966-06-29 Nat Res Dev Improvements in or relating to the production of crystalline material
US3411946A (en) * 1963-09-05 1968-11-19 Raytheon Co Process and apparatus for producing an intermetallic compound
US3752713A (en) * 1970-02-14 1973-08-14 Oki Electric Ind Co Ltd Method of manufacturing semiconductor elements by liquid phase epitaxial growing method
US3879235A (en) * 1973-06-11 1975-04-22 Massachusetts Inst Technology Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface
US4012242A (en) * 1973-11-14 1977-03-15 International Rectifier Corporation Liquid epitaxy technique
US3948692A (en) * 1974-06-24 1976-04-06 Lev Vasilievich Golubev Method of preparing multi-layer semiconductor hetero-structures on the basis of compounds AIII BV where AIII is a metal of group three and BV is a non-metal of group five
US3993511A (en) * 1975-05-30 1976-11-23 North American Philips Corporation High temperature electrical contact for Peltier-induced liquid phase epitaxy on intermetallic III-V compounds of gallium

Also Published As

Publication number Publication date
FR2358021A1 (fr) 1978-02-03
DE2728771A1 (de) 1978-01-12
JPS5516532B2 (enExample) 1980-05-02
US4133705A (en) 1979-01-09
JPS538563A (en) 1978-01-26
GB1581457A (en) 1980-12-17
FR2358021B1 (enExample) 1978-12-22

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee