DE2718026C3 - Verfahren zum Beschichten von Halbleiterplättchen aus der Dampfphase und deren Anwendung - Google Patents

Verfahren zum Beschichten von Halbleiterplättchen aus der Dampfphase und deren Anwendung

Info

Publication number
DE2718026C3
DE2718026C3 DE2718026A DE2718026A DE2718026C3 DE 2718026 C3 DE2718026 C3 DE 2718026C3 DE 2718026 A DE2718026 A DE 2718026A DE 2718026 A DE2718026 A DE 2718026A DE 2718026 C3 DE2718026 C3 DE 2718026C3
Authority
DE
Germany
Prior art keywords
reaction
value
tube
plate
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2718026A
Other languages
German (de)
English (en)
Other versions
DE2718026A1 (de
DE2718026B2 (de
Inventor
Kazuo Chigasaki Kanagawa Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4492276A external-priority patent/JPS52129282A/ja
Priority claimed from JP4492376A external-priority patent/JPS52128890A/ja
Priority claimed from JP4850776A external-priority patent/JPS52132675A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE2718026A1 publication Critical patent/DE2718026A1/de
Publication of DE2718026B2 publication Critical patent/DE2718026B2/de
Application granted granted Critical
Publication of DE2718026C3 publication Critical patent/DE2718026C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/125—Polycrystalline passivation

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE2718026A 1976-04-22 1977-04-22 Verfahren zum Beschichten von Halbleiterplättchen aus der Dampfphase und deren Anwendung Expired DE2718026C3 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4492276A JPS52129282A (en) 1976-04-22 1976-04-22 Growth method of thin film by reduced pressure vapor phase growth method
JP4492376A JPS52128890A (en) 1976-04-22 1976-04-22 Production of thin film by decompression gas phase growth process
JP4850776A JPS52132675A (en) 1976-04-30 1976-04-30 Vapor-phase growth method of thin film

Publications (3)

Publication Number Publication Date
DE2718026A1 DE2718026A1 (de) 1977-11-10
DE2718026B2 DE2718026B2 (de) 1979-10-11
DE2718026C3 true DE2718026C3 (de) 1984-06-07

Family

ID=27292066

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2718026A Expired DE2718026C3 (de) 1976-04-22 1977-04-22 Verfahren zum Beschichten von Halbleiterplättchen aus der Dampfphase und deren Anwendung

Country Status (6)

Country Link
US (1) US4179326A (enExample)
DE (1) DE2718026C3 (enExample)
FR (1) FR2348983A1 (enExample)
GB (1) GB1575578A (enExample)
IT (1) IT1114781B (enExample)
SE (1) SE432162B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7812388A (nl) * 1978-12-21 1980-06-24 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US4411729A (en) * 1979-09-29 1983-10-25 Fujitsu Limited Method for a vapor phase growth of a compound semiconductor
DE3141567C2 (de) * 1981-10-20 1986-02-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von aus Tantal, Wolfram oder Molybdän bestehenden Schichten bei niedrigen Temperaturen und Verwendung dieser Schichten
US4694778A (en) * 1984-05-04 1987-09-22 Anicon, Inc. Chemical vapor deposition wafer boat
US4641604A (en) * 1984-05-04 1987-02-10 Anicon, Inc. Chemical vapor deposition wafer boat
US4582020A (en) * 1984-05-04 1986-04-15 Anicon, Inc. Chemical vapor deposition wafer boat
DE3530999A1 (de) * 1985-08-30 1987-03-05 Telefunken Electronic Gmbh Verfahren zur herstellung von halbleiteranordnungen
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate
US4946543A (en) * 1986-06-02 1990-08-07 Kalisher Murray H Method and apparatus for growing films on a substrate
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
WO1998000215A1 (fr) * 1996-07-02 1998-01-08 Jury Viktorovich Klevkov Procede permettant d'eliminer les impuretes de substances simples ou complexes
DE102015111144A1 (de) * 2015-07-09 2017-01-12 Hanwha Q.CELLS GmbH Vorrichtung zur paarweisen Aufnahme von Substraten

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1901319A1 (de) * 1969-01-11 1970-08-06 Siemens Ag Verfahren zur Herstellung von hochreinem Galliumarsenid
DE2124392A1 (en) * 1971-05-17 1972-11-30 Siemens Ag Doping germanium by diffusion - using source conditioned with moist oxygen, giving reproducibility and accuracy
DE2133843A1 (de) * 1971-07-07 1973-01-18 Siemens Ag Anordnung zum eindiffundieren von dotierstoffen in halbleiterscheiben
DE2133876A1 (de) * 1971-07-07 1973-01-18 Siemens Ag Anordnung zum eindiffundieren von dotierstoffen
FR2227640B1 (enExample) * 1973-04-27 1977-12-30 Radiotechnique Compelec
US4018183A (en) * 1973-11-15 1977-04-19 U.S. Philips Corporation Apparatus for treating a plurality of semiconductor slices to a reacting gas current

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NICHTS-ERMITTELT

Also Published As

Publication number Publication date
DE2718026A1 (de) 1977-11-10
DE2718026B2 (de) 1979-10-11
SE7704276L (sv) 1977-10-23
US4179326A (en) 1979-12-18
IT1114781B (it) 1986-01-27
FR2348983B1 (enExample) 1979-03-09
FR2348983A1 (fr) 1977-11-18
GB1575578A (en) 1980-09-24
SE432162B (sv) 1984-03-19

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Legal Events

Date Code Title Description
8281 Inventor (new situation)

Free format text: KUDO, DAIZIRO, YOKOHAMA, KANAGAWA, JP MAEDA, KAZUO, CHIGASAKI, KANAGAWA, JP TANIKAWA, EIKI, KAWASAKI, KANAGAWA, JP

C3 Grant after two publication steps (3rd publication)
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 81245 MUENCHEN