WO1998000215A1 - Procede permettant d'eliminer les impuretes de substances simples ou complexes - Google Patents
Procede permettant d'eliminer les impuretes de substances simples ou complexes Download PDFInfo
- Publication number
- WO1998000215A1 WO1998000215A1 PCT/RU1996/000176 RU9600176W WO9800215A1 WO 1998000215 A1 WO1998000215 A1 WO 1998000215A1 RU 9600176 W RU9600176 W RU 9600176W WO 9800215 A1 WO9800215 A1 WO 9800215A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- τρubοπροvοda
- πρimesey
- veschesτvο
- οchisτκi
- flow
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D7/00—Sublimation
Definitions
- Non-logical solutions to these tasks must take into account the specific properties of the connections ⁇ 2 ⁇ 6 , and specifically: 1) pressure in the case of solid compounds, high values are obtained at temperatures and temperatures are much less than those of the melting point; 2) all of these compounds are phases of a varied system that exist in a narrow range (less than 10 " %), thanks
- the 25th phase has been known for a long time and has been used extensively for a long time. Transport of materials is not a source of waste, either using a carrier gas or using a pressure transmitter. ⁇
- ⁇ ⁇ slednem case ⁇ tsess ⁇ chis ⁇ i ⁇ v ⁇ dya ⁇ in va ⁇ uumny ⁇ ⁇ ame ⁇ a ⁇ b ⁇ lsh ⁇ go ⁇ azme ⁇ a, most of all vy ⁇ lnenny ⁇ me ⁇ alla and bys ⁇ ⁇ achivaemy ⁇ d ⁇ ⁇ az ⁇ yazheniya ⁇ yad ⁇ a 10 "4 10" 6 ⁇ .
- Other pressures in the camcorder reach the usual few units
- the cleanable material When there is a sublimation or distillation calculation in a vacuum chamber, the cleanable material is placed in the crucible. In the case of a short supply of cleanable material, the coolable element is disposed of - a condensate (cleaning agent) of the cleaned material.
- a one-time terrace is established at the site of the property, while being at a higher temperature
- the steam is broken up into the isolated laminar flows, the quantity of the ejectors is shared.
- the func- tioning unit performs two functions: as an effective mixture of impurities and as an oxide and as a task of the waste,
- the processability of the finishing process depends on a few conditions, the main of which are: the process and the associated pressure of the products
- FIG. 1 a general view of the device for the implementation of the system is shown in schematic view
- Fig. 2 is an insert in the form of a set of pipes, in the view of the overlay is shown - view
- Fig. 1 shows a vacuumable unit 1, comprising a working 2 and an optional 3 parts, placed in a two-place separate payment for a definitive
- ⁇ ⁇ aches ⁇ ve v ⁇ ladyshey m ⁇ gu ⁇ z ⁇ is ⁇ lz ⁇ va ⁇ sya ⁇ azlichnye elemen ⁇ y, ⁇ l ⁇ schad ⁇ e ⁇ echn ⁇ g ⁇ ⁇ y ⁇ section and length vybi ⁇ ae ⁇ sya ⁇ a ⁇ im ⁇ b ⁇ az ⁇ m, ch ⁇ by ⁇ i zadanny ⁇ ⁇ a ⁇ ame ⁇ a ⁇ ⁇ a ⁇ a ⁇ v ⁇ y s ⁇ edy i ⁇ ⁇ us ⁇ naya s ⁇ s ⁇ bn ⁇ s ⁇ ⁇ a varied neznachi ⁇ eln ⁇ and ⁇ bschaya ⁇ l ⁇ schad ⁇ ve ⁇ n ⁇ s ⁇ ey
- the hornets serve as bunnies, eccentric and non-eccentric rings of various lengths and ⁇ . ⁇ . BEST MODE FOR CARRYING OUT THE INVENTION
- ⁇ bschaya ⁇ l ⁇ schad ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ azhd ⁇ go ⁇ ney ⁇ mba was vzya ⁇ a 3 ⁇ aza b ⁇ lshey vnu ⁇ enney n ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ ub ⁇ v ⁇ da in mes ⁇ e ⁇ as ⁇ l ⁇ zheniya ⁇ ney ⁇ mba and shyuschad ⁇ dn ⁇ g ⁇ sectional ⁇ azhd ⁇ go ⁇ ney ⁇ mba s ⁇ s ⁇ avlyala s ⁇ ve ⁇ s ⁇ venn ⁇ 0.5, 0.6 and 0.7 ⁇ l ⁇ schadi sectional ⁇ e ⁇ echn ⁇ g ⁇
- the working temperature was maintained from 540 ° ⁇ to 580 ° ⁇ .
- the temperature is lower than that of the temperature of the The process led 30
- the components of the minimum pressure system ( ⁇ MIP ) at the temperature of the finishing process are 630-660 ° ⁇ .
- the length of the outlet nozzle of the tank is 120 mm,
- the appliance was installed in a two-phase open furnace and through the 9 handheld with the help of a vacuum system, it was pumped out to a charge of 10 " -10 " ⁇ . With the first section of the func- tive furnace, the temperature of the working part was supported
- the coolers were cooled down to a room temperature. After this, the vacuum system was turned off and the purified cadmium telluride was removed.
- the total content of impurities (with the exception of impurities ⁇ , C, ⁇ , ⁇ , ⁇ , C1 and ⁇ ) is no more than 0.0003% by weight (99.9997%).
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Cette invention concerne un procédé permettant d'éliminer les impuretés dans des substances simples ou complexes, ainsi que dans des composés organiques ou non organiques. Ce procédé, qui comprend deux étapes, consiste à faire passer ces éléments en phase vapeur dans un tube sous vide. Lors de la première étape, la substance contenant des impuretés est placée dans un conteneur équipé d'une buse, puis chauffée de manière à créer un flux laminaire dans la zone de travail du tube. Lors de la seconde étape, on exerce sur ce flux une ou plusieurs actions géométriques en disposant dans ledit tube des inserts qui possèdent des canaux traversant ainsi qu'une surface développée. La section de passage de l'insert est supérieure à la section de la buse de sortie du conteneur, mais inférieure à la section de passage de l'insert suivant dans le sens d'écoulement du flux. La zone de travail est maintenue à une température qui est supérieure à celle correspondant au point de condensation critique de la substance à purifier. Lorsque l'on exerce l'action géométrique sur le flux, ce dernier se divise en au moins deux flux isolés. La substance purifiée est ensuite récupérée dans un élément de refroidissement dans lequel les vapeurs de ladite substance purifiée se trouvent à une pression allant de 10?-3 à 10-5¿ Torr. Lors de la purification, des turbulences locales assurent la création d'une couche de diffusion et de bordure à la sortie du conteneur d'alimentation ainsi qu'au niveau des inserts, ce qui permet d'obtenir un taux de purification élevé des substances.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/RU1996/000176 WO1998000215A1 (fr) | 1996-07-02 | 1996-07-02 | Procede permettant d'eliminer les impuretes de substances simples ou complexes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/RU1996/000176 WO1998000215A1 (fr) | 1996-07-02 | 1996-07-02 | Procede permettant d'eliminer les impuretes de substances simples ou complexes |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998000215A1 true WO1998000215A1 (fr) | 1998-01-08 |
Family
ID=20130010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/RU1996/000176 WO1998000215A1 (fr) | 1996-07-02 | 1996-07-02 | Procede permettant d'eliminer les impuretes de substances simples ou complexes |
Country Status (1)
Country | Link |
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WO (1) | WO1998000215A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2782932A1 (fr) * | 1998-09-07 | 2000-03-10 | Serge Medvedieff | Appareil pour la purificaiton, en phase gazeuse de substances inorganiques simples et composees |
KR100437762B1 (ko) * | 2001-05-22 | 2004-06-26 | 엘지전자 주식회사 | 유기물질의 정제장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3489621A (en) * | 1966-06-02 | 1970-01-13 | Siemens Ag | Method of producing highly pure crystalline,especially monocrystalline materials |
US3694166A (en) * | 1967-05-22 | 1972-09-26 | Hughes Aircraft Co | Crystal growth tube |
SU451446A1 (ru) * | 1970-10-26 | 1974-11-30 | Московский Ордена Ленина И Ордена Трудового Красного Знамени Государственный Университет Им. М.В.Ломоносова | Способ очистки веществ |
GB1575578A (en) * | 1976-04-22 | 1980-09-24 | Fujitsu Ltd | Process for the vapour deposition of a thin film |
-
1996
- 1996-07-02 WO PCT/RU1996/000176 patent/WO1998000215A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3489621A (en) * | 1966-06-02 | 1970-01-13 | Siemens Ag | Method of producing highly pure crystalline,especially monocrystalline materials |
US3694166A (en) * | 1967-05-22 | 1972-09-26 | Hughes Aircraft Co | Crystal growth tube |
SU451446A1 (ru) * | 1970-10-26 | 1974-11-30 | Московский Ордена Ленина И Ордена Трудового Красного Знамени Государственный Университет Им. М.В.Ломоносова | Способ очистки веществ |
GB1575578A (en) * | 1976-04-22 | 1980-09-24 | Fujitsu Ltd | Process for the vapour deposition of a thin film |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2782932A1 (fr) * | 1998-09-07 | 2000-03-10 | Serge Medvedieff | Appareil pour la purificaiton, en phase gazeuse de substances inorganiques simples et composees |
KR100437762B1 (ko) * | 2001-05-22 | 2004-06-26 | 엘지전자 주식회사 | 유기물질의 정제장치 |
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