SE7704276L - Forfarande for att utifran en anga bringa en tunn film att tillvexa - Google Patents

Forfarande for att utifran en anga bringa en tunn film att tillvexa

Info

Publication number
SE7704276L
SE7704276L SE7704276A SE7704276A SE7704276L SE 7704276 L SE7704276 L SE 7704276L SE 7704276 A SE7704276 A SE 7704276A SE 7704276 A SE7704276 A SE 7704276A SE 7704276 L SE7704276 L SE 7704276L
Authority
SE
Sweden
Prior art keywords
thin film
wafers
anga
bringing
procedure
Prior art date
Application number
SE7704276A
Other languages
English (en)
Other versions
SE432162B (sv
Inventor
D Kudo
K Maeda
E Tanikawa
Original Assignee
Jujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4492276A external-priority patent/JPS52129282A/ja
Priority claimed from JP4492376A external-priority patent/JPS52128890A/ja
Priority claimed from JP4850776A external-priority patent/JPS52132675A/ja
Application filed by Jujitsu Ltd filed Critical Jujitsu Ltd
Publication of SE7704276L publication Critical patent/SE7704276L/sv
Publication of SE432162B publication Critical patent/SE432162B/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/125—Polycrystalline passivation

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
SE7704276A 1976-04-22 1977-04-14 Forfarande for att utifran en anga bringa en tunn film att tillvexa SE432162B (sv)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4492276A JPS52129282A (en) 1976-04-22 1976-04-22 Growth method of thin film by reduced pressure vapor phase growth method
JP4492376A JPS52128890A (en) 1976-04-22 1976-04-22 Production of thin film by decompression gas phase growth process
JP4850776A JPS52132675A (en) 1976-04-30 1976-04-30 Vapor-phase growth method of thin film

Publications (2)

Publication Number Publication Date
SE7704276L true SE7704276L (sv) 1977-10-23
SE432162B SE432162B (sv) 1984-03-19

Family

ID=27292066

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7704276A SE432162B (sv) 1976-04-22 1977-04-14 Forfarande for att utifran en anga bringa en tunn film att tillvexa

Country Status (6)

Country Link
US (1) US4179326A (sv)
DE (1) DE2718026C3 (sv)
FR (1) FR2348983A1 (sv)
GB (1) GB1575578A (sv)
IT (1) IT1114781B (sv)
SE (1) SE432162B (sv)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7812388A (nl) * 1978-12-21 1980-06-24 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US4411729A (en) * 1979-09-29 1983-10-25 Fujitsu Limited Method for a vapor phase growth of a compound semiconductor
DE3141567C2 (de) * 1981-10-20 1986-02-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von aus Tantal, Wolfram oder Molybdän bestehenden Schichten bei niedrigen Temperaturen und Verwendung dieser Schichten
US4582020A (en) * 1984-05-04 1986-04-15 Anicon, Inc. Chemical vapor deposition wafer boat
US4641604A (en) * 1984-05-04 1987-02-10 Anicon, Inc. Chemical vapor deposition wafer boat
US4694778A (en) * 1984-05-04 1987-09-22 Anicon, Inc. Chemical vapor deposition wafer boat
DE3530999A1 (de) * 1985-08-30 1987-03-05 Telefunken Electronic Gmbh Verfahren zur herstellung von halbleiteranordnungen
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate
US4946543A (en) * 1986-06-02 1990-08-07 Kalisher Murray H Method and apparatus for growing films on a substrate
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
WO1998000215A1 (fr) * 1996-07-02 1998-01-08 Jury Viktorovich Klevkov Procede permettant d'eliminer les impuretes de substances simples ou complexes
DE102015111144A1 (de) * 2015-07-09 2017-01-12 Hanwha Q.CELLS GmbH Vorrichtung zur paarweisen Aufnahme von Substraten

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1901319A1 (de) * 1969-01-11 1970-08-06 Siemens Ag Verfahren zur Herstellung von hochreinem Galliumarsenid
DE2124392A1 (en) * 1971-05-17 1972-11-30 Siemens Ag Doping germanium by diffusion - using source conditioned with moist oxygen, giving reproducibility and accuracy
DE2133843A1 (de) * 1971-07-07 1973-01-18 Siemens Ag Anordnung zum eindiffundieren von dotierstoffen in halbleiterscheiben
DE2133876A1 (de) * 1971-07-07 1973-01-18 Siemens Ag Anordnung zum eindiffundieren von dotierstoffen
FR2227640B1 (sv) * 1973-04-27 1977-12-30 Radiotechnique Compelec
US4018183A (en) * 1973-11-15 1977-04-19 U.S. Philips Corporation Apparatus for treating a plurality of semiconductor slices to a reacting gas current

Also Published As

Publication number Publication date
DE2718026B2 (de) 1979-10-11
FR2348983B1 (sv) 1979-03-09
DE2718026C3 (de) 1984-06-07
SE432162B (sv) 1984-03-19
IT1114781B (it) 1986-01-27
FR2348983A1 (fr) 1977-11-18
GB1575578A (en) 1980-09-24
US4179326A (en) 1979-12-18
DE2718026A1 (de) 1977-11-10

Similar Documents

Publication Publication Date Title
SE7704276L (sv) Forfarande for att utifran en anga bringa en tunn film att tillvexa
SE7513336L (sv) Forfarande och anordning for framstellning av tunna hinnor av en forening
SE7511927L (sv) Halvledardon och sett att framstella detsamma
GB1060925A (en) Growth of insulating films such as for semiconductor devices
BE618732A (fr) Procédé de fabrication de dispositifs semi-conducteurs par dépôt monocristallin à partir de la phase gazeuse
GB914126A (en) Improvements in or relating to the production of thin films
GB1118757A (en) Method of depositing silicon nitride films
IT7820149A0 (it) Processo per accrescere pellicole semiconduttrici epitassiali.
GB1132491A (en) Improvements in or relating to the manufacture of semiconductor systems
JPS52115185A (en) Vapor phase growing apparatus
JPS52123870A (en) Thin semiconductor film producing apparatus
JPS5234668A (en) Gaseous phase growing process of semiconductor
JPS51144400A (en) Process for production of thin film silicon nitride
JPS5243369A (en) Flat etching method for silicon
JPS5352368A (en) Quartz tube for furnace
JPS526080A (en) Production method of semiconductor wafer
JPS5375770A (en) X-ray copying mask
JPS5589467A (en) Growth of aluminum in gaseous phase
JPS52129282A (en) Growth method of thin film by reduced pressure vapor phase growth method
JPS5326663A (en) Manu facture of semiconductor device
KR790000582B1 (en) Semiconductor device
JPS5396673A (en) Gas plasma etching method for sio2 film
JPS51124379A (en) Plasma etching method
JPS5360564A (en) Deposition method of semiconductor wafers
ES278662A1 (es) Procedimiento para formar sobre un substrato semiconductivo una película semiconductiva epitaxil.

Legal Events

Date Code Title Description
NAL Patent in force

Ref document number: 7704276-0

Format of ref document f/p: F

NUG Patent has lapsed

Ref document number: 7704276-0

Format of ref document f/p: F