BE618732A - Procédé de fabrication de dispositifs semi-conducteurs par dépôt monocristallin à partir de la phase gazeuse - Google Patents

Procédé de fabrication de dispositifs semi-conducteurs par dépôt monocristallin à partir de la phase gazeuse

Info

Publication number
BE618732A
BE618732A BE618732A BE618732A BE618732A BE 618732 A BE618732 A BE 618732A BE 618732 A BE618732 A BE 618732A BE 618732 A BE618732 A BE 618732A BE 618732 A BE618732 A BE 618732A
Authority
BE
Belgium
Prior art keywords
gas phase
semiconductor devices
manufacturing semiconductor
monocrystalline deposition
monocrystalline
Prior art date
Application number
BE618732A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE618732A publication Critical patent/BE618732A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
BE618732A 1961-06-09 1962-06-08 Procédé de fabrication de dispositifs semi-conducteurs par dépôt monocristallin à partir de la phase gazeuse BE618732A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1961S0074267 DE1138481C2 (de) 1961-06-09 1961-06-09 Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase

Publications (1)

Publication Number Publication Date
BE618732A true BE618732A (fr) 1962-12-14

Family

ID=7504530

Family Applications (1)

Application Number Title Priority Date Filing Date
BE618732A BE618732A (fr) 1961-06-09 1962-06-08 Procédé de fabrication de dispositifs semi-conducteurs par dépôt monocristallin à partir de la phase gazeuse

Country Status (4)

Country Link
US (1) US3152933A (fr)
BE (1) BE618732A (fr)
DE (1) DE1138481C2 (fr)
GB (1) GB987895A (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE636316A (fr) * 1962-08-23 1900-01-01
DE1467360B2 (de) * 1962-12-01 1971-08-12 Siemens AG, 1000 Berlin u 8000 München Verfahren zum herstellen einkristalliner schichten aus indiumantimonid
US3304908A (en) * 1963-08-14 1967-02-21 Merck & Co Inc Epitaxial reactor including mask-work support
DE1544259A1 (de) * 1965-02-05 1970-07-09 Siemens Ag Verfahren zum Herstellen von gleichmaessigen epitaktischen Aufwachsschichten
US3607135A (en) * 1967-10-12 1971-09-21 Ibm Flash evaporating gallium arsenide
US3610202A (en) * 1969-05-23 1971-10-05 Siemens Ag Epitactic apparatus
US3658569A (en) * 1969-11-13 1972-04-25 Nasa Selective nickel deposition
US3647530A (en) * 1969-11-13 1972-03-07 Texas Instruments Inc Production of semiconductor material
US3936328A (en) * 1972-04-28 1976-02-03 Mitsubishi Denki Kabushiki Kaisha Process of manufacturing semiconductor devices
BE806098A (fr) * 1973-03-28 1974-02-01 Siemens Ag Procede de fabrication de silicium ou autre matiere semi-conductrice tres pure
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum
DE2541284A1 (de) * 1975-09-16 1977-03-24 Wacker Chemitronic Verfahren zur abscheidung von hochreinem halbleitermaterial
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US5651839A (en) * 1995-10-26 1997-07-29 Queen's University At Kingston Process for engineering coherent twin and coincident site lattice grain boundaries in polycrystalline materials
AU2009236679B2 (en) * 2008-04-14 2014-02-27 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
CA2721194A1 (fr) * 2008-04-14 2009-10-22 Hemlock Semiconductor Corporation Appareil de fabrication destine a deposer un materiau sur une electrode destinee a etre utilisee dans ledit appareil
RU2503905C2 (ru) * 2008-04-14 2014-01-10 Хемлок Семикондактор Корпорейшн Производственная установка для осаждения материала и электрод для использования в ней
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
KR101115697B1 (ko) * 2009-12-02 2012-03-06 웅진폴리실리콘주식회사 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE943422C (de) * 1949-04-02 1956-05-17 Licentia Gmbh Gesteuerter Trockengleichrichter, insbesondere mit Germanium, Silizium oder Siliziumkarbid als halbleitender Substanz
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen
NL193073A (fr) * 1954-03-05
DE1046196B (de) * 1954-11-27 1958-12-11 Siemens Ag Verfahren zur Herstellung eines Halbleiters fuer Flaechengleichrichter, -transistoren od. dgl. mit mehreren Bereichen verschiedener Leitfaehigkeit
NL109287C (fr) * 1955-11-02
FR1141561A (fr) * 1956-01-20 1957-09-04 Cedel Procédé et moyens pour la fabrication de matériaux semi-conducteurs
NL104094C (fr) * 1956-05-18
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
DE1061593B (de) * 1956-06-25 1959-07-16 Siemens Ag Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
DE1150366B (de) * 1958-12-09 1963-06-20 Siemens Ag Verfahren zur Herstellung von Reinstsilicium
US3085032A (en) * 1960-02-26 1963-04-09 Bell Telephone Labor Inc Treatment of gallium arsenide
CH428675A (de) * 1960-03-02 1967-01-31 Siemens Ag Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silizium

Also Published As

Publication number Publication date
DE1138481B (de) 1962-10-25
DE1138481C2 (de) 1963-05-22
GB987895A (en) 1965-03-31
US3152933A (en) 1964-10-13

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