DE2702145C3 - Verfahren zur Herstellung eines dotierten, in der r-Ebene orientierten α -Aluminiumoxid-Einkristalls von kreisförmigem Querschnitt - Google Patents
Verfahren zur Herstellung eines dotierten, in der r-Ebene orientierten α -Aluminiumoxid-Einkristalls von kreisförmigem QuerschnittInfo
- Publication number
- DE2702145C3 DE2702145C3 DE2702145A DE2702145A DE2702145C3 DE 2702145 C3 DE2702145 C3 DE 2702145C3 DE 2702145 A DE2702145 A DE 2702145A DE 2702145 A DE2702145 A DE 2702145A DE 2702145 C3 DE2702145 C3 DE 2702145C3
- Authority
- DE
- Germany
- Prior art keywords
- single crystal
- melt
- ppm
- section
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 44
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000155 melt Substances 0.000 claims description 18
- 229910021645 metal ion Inorganic materials 0.000 claims description 7
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 1
- 239000011651 chromium Substances 0.000 description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007792 addition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000011081 inoculation Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- AAQFSZFQCXLMNT-ACMTZBLWSA-N (3s)-3-amino-4-[[(2s)-1-methoxy-1-oxo-3-phenylpropan-2-yl]amino]-4-oxobutanoic acid;hydrochloride Chemical compound Cl.OC(=O)C[C@H](N)C(=O)N[C@H](C(=O)OC)CC1=CC=CC=C1 AAQFSZFQCXLMNT-ACMTZBLWSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 Iron ions Chemical class 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910001430 chromium ion Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65673676A | 1976-02-09 | 1976-02-09 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2702145A1 DE2702145A1 (de) | 1977-09-01 |
| DE2702145B2 DE2702145B2 (de) | 1980-10-16 |
| DE2702145C3 true DE2702145C3 (de) | 1981-06-04 |
Family
ID=24634338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2702145A Expired DE2702145C3 (de) | 1976-02-09 | 1977-01-20 | Verfahren zur Herstellung eines dotierten, in der r-Ebene orientierten α -Aluminiumoxid-Einkristalls von kreisförmigem Querschnitt |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS52107298A (OSRAM) |
| DE (1) | DE2702145C3 (OSRAM) |
| FR (1) | FR2340130A2 (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012012242A (ja) * | 2010-06-30 | 2012-01-19 | Showa Denko Kk | サファイア単結晶の製造方法、サファイア基板および半導体発光素子 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2430910C3 (de) * | 1974-06-27 | 1981-01-08 | Varta Batterie Ag, 3000 Hannover | Verfahren zur Herstellung von Silber-(H)-oxid für galvanische Elemente |
| DE2528585C3 (de) * | 1974-06-28 | 1979-10-11 | Union Carbide Corp., New York, N.Y. (V.St.A.) | Verfahren zur Herstellung von dotierten a -Aluminiumoxid-Einkristallen |
-
1977
- 1977-01-20 DE DE2702145A patent/DE2702145C3/de not_active Expired
- 1977-02-08 FR FR7703494A patent/FR2340130A2/fr active Granted
- 1977-02-08 JP JP1220177A patent/JPS52107298A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2702145B2 (de) | 1980-10-16 |
| DE2702145A1 (de) | 1977-09-01 |
| FR2340130A2 (fr) | 1977-09-02 |
| JPS52107298A (en) | 1977-09-08 |
| FR2340130B2 (OSRAM) | 1983-07-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69428962T2 (de) | Thermische Umwandlung von polykristallinem Aluminiumoxid in festem Zustand zu Saphir unter Verwendung eines Kristallkeimes | |
| DE69615282T2 (de) | Tiegel für die Züchtung fehlerfreier Einkristalle | |
| DE69609907T2 (de) | Verfahren zur Herstellung fehlerfreier Einkristalle mit grösserer Ausbringung | |
| EP1259663B1 (de) | Verfahren und vorrichtung zur züchtung von grossvolumigen orientierten einkristallen | |
| DE3686570T2 (de) | Verfahren und vorrichtung zum herstellen von einkristallen nach dem czochralski-verfahren. | |
| WO2003089693A1 (de) | Quarzglastiegel und verfahren zur herstellung desselben | |
| DE2619965A1 (de) | Verfahren zur einstellung des sauerstoffgehalts in siliciumkristallen | |
| DE1719493A1 (de) | Verfahren zur Herstellung von drahtfoermigen Koerpern (Haarkristallen) kreisfoermigen Querschnitts,die aus Siliciumcarbid-Einkristallen bestehen,und Gegenstaende aus Siliciumcarbid-Haarkristallen kreisfoermigen Querschnitts | |
| DE2942057C3 (de) | Verfahren zum Czochralski-Ziehen eines Silicium-Einkristallstabs | |
| DE3635064A1 (de) | Verfahren zur raffination von silicium und derart gereinigtes silicium | |
| DE69508473T2 (de) | Verfahren zur Herstellung von Silizium-Einkristall und Tiegel aus geschmolzenem Silika dafür | |
| DE112017004599T5 (de) | Quarzglastiegel und Verfahren zu dessen Herstellung | |
| DE69414652T2 (de) | Verbessertes Verfahren zur Bildung von Siliconkristallen | |
| DE1646804B2 (de) | Verfahren zur verbesserung der oberflaechenqualitaet von anorganischen oxidmaterialien | |
| DE2702145C3 (de) | Verfahren zur Herstellung eines dotierten, in der r-Ebene orientierten α -Aluminiumoxid-Einkristalls von kreisförmigem Querschnitt | |
| DE2528585C3 (de) | Verfahren zur Herstellung von dotierten a -Aluminiumoxid-Einkristallen | |
| SU677648A3 (ru) | Способ создани на поверхности известково-натриевого стекла непрерывной металлической дисперсии | |
| DE3013045C2 (de) | Vorrichtung zum Ziehen von Einkristallbirnen aus Gadolinium-Gallium-Granat | |
| DE68918821T2 (de) | Verfahren zur Fluoreszenzverbesserung von Titandotierten Oxid-Kristallen für abstimmbaren Laser. | |
| US4224099A (en) | Method for producing R-plane single crystal alpha alumina | |
| DE69117159T2 (de) | Verkleidung aus Metall zur Steigerung der Wachstumsgeschwindigkeit beim Aufdampfen von Diamant mittels CVD | |
| DE2555610C3 (de) | Verfahren zur Herstellung von A -Aluminiumoxid-Einkristallen | |
| DE2728314C3 (de) | Verfahren zum Ziehen eines Gadolinium-Gallium-Granat-Einkristalls aus einer Schmelze | |
| DE69201849T2 (de) | Verfahren zur Herstellung von Barium-Titanat Einkristallen. | |
| DE19546992C2 (de) | Hochfrequenz-Induktionsofen mit Faserführung, Suszeptor hierfür, einkristalline oxidische Aluminiumoxidendlosfasern und Herstellungsverfahren für diese Fasern |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) |