DE69609907T2 - Verfahren zur Herstellung fehlerfreier Einkristalle mit grösserer Ausbringung - Google Patents

Verfahren zur Herstellung fehlerfreier Einkristalle mit grösserer Ausbringung

Info

Publication number
DE69609907T2
DE69609907T2 DE69609907T DE69609907T DE69609907T2 DE 69609907 T2 DE69609907 T2 DE 69609907T2 DE 69609907 T DE69609907 T DE 69609907T DE 69609907 T DE69609907 T DE 69609907T DE 69609907 T2 DE69609907 T2 DE 69609907T2
Authority
DE
Germany
Prior art keywords
production
single crystals
larger output
flawless single
flawless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69609907T
Other languages
English (en)
Other versions
DE69609907D1 (de
Inventor
Richard L Hansen
Robert D Shelley
Larry E Drafall
Robert M Mccutchan
John D Holder
Leon A Allan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
General Electric Co
Original Assignee
SunEdison Inc
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc, General Electric Co filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE69609907D1 publication Critical patent/DE69609907D1/de
Publication of DE69609907T2 publication Critical patent/DE69609907T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
DE69609907T 1995-06-14 1996-06-10 Verfahren zur Herstellung fehlerfreier Einkristalle mit grösserer Ausbringung Expired - Lifetime DE69609907T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/490,473 US5980629A (en) 1995-06-14 1995-06-14 Methods for improving zero dislocation yield of single crystals

Publications (2)

Publication Number Publication Date
DE69609907D1 DE69609907D1 (de) 2000-09-28
DE69609907T2 true DE69609907T2 (de) 2000-12-21

Family

ID=23948209

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69609907T Expired - Lifetime DE69609907T2 (de) 1995-06-14 1996-06-10 Verfahren zur Herstellung fehlerfreier Einkristalle mit grösserer Ausbringung

Country Status (9)

Country Link
US (1) US5980629A (de)
EP (1) EP0753605B1 (de)
JP (1) JP3054362B2 (de)
KR (1) KR100408906B1 (de)
CN (1) CN1087362C (de)
DE (1) DE69609907T2 (de)
MY (1) MY113247A (de)
SG (1) SG55205A1 (de)
TW (1) TW302499B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11162186B2 (en) 2016-09-23 2021-11-02 Sumco Corporation Quartz glass crucible, manufacturing method thereof, and manufacturing method of silicon single crystal using quartz glass crucible

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JP5509189B2 (ja) 2011-12-26 2014-06-04 ジルトロニック アクチエンゲゼルシャフト 単結晶シリコンの製造方法
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KR101856091B1 (ko) * 2013-12-28 2018-05-09 가부시키가이샤 섬코 석영 유리 도가니 및 그의 왜곡 측정 장치
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CN105239159A (zh) * 2015-09-10 2016-01-13 上海超硅半导体有限公司 直拉法生长单晶硅用石英坩埚的设计及制备方法
JP6743753B2 (ja) * 2017-04-27 2020-08-19 株式会社Sumco シリコン単結晶の引上げ方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11162186B2 (en) 2016-09-23 2021-11-02 Sumco Corporation Quartz glass crucible, manufacturing method thereof, and manufacturing method of silicon single crystal using quartz glass crucible

Also Published As

Publication number Publication date
US5980629A (en) 1999-11-09
KR970001618A (ko) 1997-01-24
EP0753605B1 (de) 2000-08-23
EP0753605A1 (de) 1997-01-15
DE69609907D1 (de) 2000-09-28
KR100408906B1 (ko) 2004-04-13
JP3054362B2 (ja) 2000-06-19
MY113247A (en) 2001-12-31
CN1152037A (zh) 1997-06-18
CN1087362C (zh) 2002-07-10
SG55205A1 (en) 1998-12-21
TW302499B (de) 1997-04-11
JPH09110579A (ja) 1997-04-28

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