JPS52107298A - Method of making rrplane single crystal alphaaalumina - Google Patents

Method of making rrplane single crystal alphaaalumina

Info

Publication number
JPS52107298A
JPS52107298A JP1220177A JP1220177A JPS52107298A JP S52107298 A JPS52107298 A JP S52107298A JP 1220177 A JP1220177 A JP 1220177A JP 1220177 A JP1220177 A JP 1220177A JP S52107298 A JPS52107298 A JP S52107298A
Authority
JP
Japan
Prior art keywords
rrplane
alphaaalumina
making
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1220177A
Other languages
English (en)
Japanese (ja)
Inventor
Chiyaaruzu Makujiru Uiriamu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Publication of JPS52107298A publication Critical patent/JPS52107298A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1220177A 1976-02-09 1977-02-08 Method of making rrplane single crystal alphaaalumina Pending JPS52107298A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65673676A 1976-02-09 1976-02-09

Publications (1)

Publication Number Publication Date
JPS52107298A true JPS52107298A (en) 1977-09-08

Family

ID=24634338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1220177A Pending JPS52107298A (en) 1976-02-09 1977-02-08 Method of making rrplane single crystal alphaaalumina

Country Status (3)

Country Link
JP (1) JPS52107298A (OSRAM)
DE (1) DE2702145C3 (OSRAM)
FR (1) FR2340130A2 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012002089A1 (ja) * 2010-06-30 2012-01-05 昭和電工株式会社 サファイア単結晶の製造方法、サファイア基板および半導体発光素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5118999A (en) * 1974-06-28 1976-02-14 Union Carbide Corp Rr mentanketsusho arufua aruminaoseizosuruhoho
JPS5118994A (en) * 1974-06-27 1976-02-14 Varta Batterie Denchosankagin *2* noseiho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5118994A (en) * 1974-06-27 1976-02-14 Varta Batterie Denchosankagin *2* noseiho
JPS5118999A (en) * 1974-06-28 1976-02-14 Union Carbide Corp Rr mentanketsusho arufua aruminaoseizosuruhoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012002089A1 (ja) * 2010-06-30 2012-01-05 昭和電工株式会社 サファイア単結晶の製造方法、サファイア基板および半導体発光素子

Also Published As

Publication number Publication date
DE2702145C3 (de) 1981-06-04
DE2702145B2 (de) 1980-10-16
DE2702145A1 (de) 1977-09-01
FR2340130A2 (fr) 1977-09-02
FR2340130B2 (OSRAM) 1983-07-08

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