DE2639707C2 - Verfahren zur Steuerung der Sauerstoffkonzentration beim Ziehen von Siliciumkristallen - Google Patents
Verfahren zur Steuerung der Sauerstoffkonzentration beim Ziehen von SiliciumkristallenInfo
- Publication number
- DE2639707C2 DE2639707C2 DE2639707A DE2639707A DE2639707C2 DE 2639707 C2 DE2639707 C2 DE 2639707C2 DE 2639707 A DE2639707 A DE 2639707A DE 2639707 A DE2639707 A DE 2639707A DE 2639707 C2 DE2639707 C2 DE 2639707C2
- Authority
- DE
- Germany
- Prior art keywords
- crystal
- crucible
- melt
- silicon
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 81
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims description 31
- 239000001301 oxygen Substances 0.000 title claims description 31
- 229910052760 oxygen Inorganic materials 0.000 title claims description 31
- 238000000034 method Methods 0.000 title claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 18
- 229910052710 silicon Inorganic materials 0.000 title claims description 18
- 239000010703 silicon Substances 0.000 title claims description 18
- 239000000155 melt Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 22
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 238000010586 diagram Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 230000035939 shock Effects 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 claims 2
- 239000004927 clay Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 238000002231 Czochralski process Methods 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 230000002349 favourable effect Effects 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 230000002452 interceptive effect Effects 0.000 claims 1
- 125000004429 atom Chemical group 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 230000002411 adverse Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 241001136792 Alle Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/916—Oxygen testing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/624,618 US4040895A (en) | 1975-10-22 | 1975-10-22 | Control of oxygen in silicon crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2639707A1 DE2639707A1 (de) | 1977-04-28 |
| DE2639707C2 true DE2639707C2 (de) | 1983-08-18 |
Family
ID=24502676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2639707A Expired DE2639707C2 (de) | 1975-10-22 | 1976-09-03 | Verfahren zur Steuerung der Sauerstoffkonzentration beim Ziehen von Siliciumkristallen |
Country Status (7)
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2758888C2 (de) * | 1977-12-30 | 1983-09-22 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung reinster Siliciumeinkristalle |
| US4415401A (en) * | 1980-03-10 | 1983-11-15 | Mobil Solar Energy Corporation | Control of atmosphere surrounding crystal growth zone |
| EP0042901B1 (fr) * | 1980-06-26 | 1984-10-31 | International Business Machines Corporation | Procédé pour contrôler la teneur en oxygène des barreaux de silicium tirés selon la méthode de Czochralski |
| DE3170781D1 (en) * | 1980-12-29 | 1985-07-04 | Monsanto Co | Method for regulating concentration and distribution of oxygen in czochralski grown silicon |
| US4436577A (en) | 1980-12-29 | 1984-03-13 | Monsanto Company | Method of regulating concentration and distribution of oxygen in Czochralski grown silicon |
| US4511428A (en) * | 1982-07-09 | 1985-04-16 | International Business Machines Corporation | Method of controlling oxygen content and distribution in grown silicon crystals |
| US4545849A (en) * | 1983-03-03 | 1985-10-08 | Motorola Inc. | Method for control of oxygen in silicon crystals |
| US4659423A (en) * | 1986-04-28 | 1987-04-21 | International Business Machines Corporation | Semiconductor crystal growth via variable melt rotation |
| JPH0699223B2 (ja) * | 1989-09-19 | 1994-12-07 | 信越半導体株式会社 | シリコン単結晶引上げ方法 |
| US5215620A (en) * | 1989-09-19 | 1993-06-01 | Shin-Etsu Handotai Co. Ltd. | Method for pulling a silicon single crystal by imposing a periodic rotation rate on a constant rotation rate |
| JPH0777999B2 (ja) * | 1989-11-24 | 1995-08-23 | 信越半導体株式会社 | アンチモンドープ単結晶シリコンの育成方法 |
| US5135218A (en) * | 1990-12-21 | 1992-08-04 | Mcgovern James R | Pool game table |
| JPH0532480A (ja) * | 1991-02-20 | 1993-02-09 | Sumitomo Metal Ind Ltd | 結晶成長方法 |
| EP0668613A1 (en) * | 1993-09-09 | 1995-08-23 | Soviet-German Joint Venture "Mamt" | Method of determining the concentration of oxygen in silicon crystals |
| US5474020A (en) * | 1994-05-06 | 1995-12-12 | Texas Instruments Incorporated | Oxygen precipitation control in czochralski-grown silicon cyrstals |
| US5820672A (en) * | 1994-05-09 | 1998-10-13 | Texas Instruments Incorporated | OISF control in czochralski-grown crystals |
| US5593498A (en) * | 1995-06-09 | 1997-01-14 | Memc Electronic Materials, Inc. | Apparatus for rotating a crucible of a crystal pulling machine |
| US5795381A (en) * | 1996-09-09 | 1998-08-18 | Memc Electrical Materials, Inc. | SIO probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon |
| DE69802864T2 (de) | 1997-05-21 | 2002-08-29 | Shin-Etsu Handotai Co., Ltd. | Silizium-Impfkristall, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Silizium-Einkristalls unter Verwendung des Silizium-Impfkristalls |
| US5911825A (en) * | 1997-09-30 | 1999-06-15 | Seh America, Inc. | Low oxygen heater |
| EP0947611A3 (en) * | 1998-03-17 | 2002-03-20 | Shin-Etsu Handotai Company Limited | A method for producing a silicon single crystal and the silicon single crystal produced thereby |
| RU2193079C1 (ru) * | 1999-04-14 | 2002-11-20 | Ремизов Олег Алексеевич | Способ получения монокристаллического кремния |
| JP4764007B2 (ja) * | 2002-11-12 | 2011-08-31 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | ルツボの回転を利用して温度勾配を制御し単結晶シリコンを製造する方法 |
| CN101935871A (zh) * | 2010-09-04 | 2011-01-05 | 山西天能科技有限公司 | 一种降低单晶硅位错的方法 |
| CN102011178B (zh) * | 2010-12-30 | 2012-10-03 | 宁晋晶兴电子材料有限公司 | 一种降低单晶硅内部气孔的生产方法 |
| CN107268080B (zh) * | 2017-07-06 | 2019-08-02 | 锦州神工半导体股份有限公司 | 一种大直径无双棱线单晶硅的提拉生长方法 |
| CN109576785A (zh) * | 2018-12-29 | 2019-04-05 | 徐州鑫晶半导体科技有限公司 | 调节单晶硅生长过程中氧含量的方法 |
| US12351938B2 (en) | 2022-02-10 | 2025-07-08 | Globalwafers Co., Ltd. | Methods for producing a product ingot having low oxygen content |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3353914A (en) * | 1964-12-30 | 1967-11-21 | Martin Marietta Corp | Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof |
| NL145151B (nl) * | 1965-08-05 | 1975-03-17 | Tno | Werkwijze en inrichting voor zonesmelten. |
| US3873463A (en) * | 1972-02-23 | 1975-03-25 | Philips Corp | Method of and device for manufacturing substituted single crystals |
| US3929557A (en) * | 1973-06-11 | 1975-12-30 | Us Air Force | Periodically and alternately accelerating and decelerating rotation rate of a feed crystal |
-
1975
- 1975-10-22 US US05/624,618 patent/US4040895A/en not_active Expired - Lifetime
-
1976
- 1976-07-28 FR FR7623756A patent/FR2328509A1/fr active Granted
- 1976-09-03 DE DE2639707A patent/DE2639707C2/de not_active Expired
- 1976-09-16 GB GB38428/76A patent/GB1519725A/en not_active Expired
- 1976-09-17 IT IT27309/76A patent/IT1068285B/it active
- 1976-09-29 JP JP51116085A patent/JPS5252185A/ja active Granted
- 1976-10-20 CA CA263,823A patent/CA1067800A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1519725A (en) | 1978-08-02 |
| DE2639707A1 (de) | 1977-04-28 |
| JPS5252185A (en) | 1977-04-26 |
| FR2328509B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-07-06 |
| IT1068285B (it) | 1985-03-21 |
| FR2328509A1 (fr) | 1977-05-20 |
| US4040895A (en) | 1977-08-09 |
| CA1067800A (en) | 1979-12-11 |
| JPS5329677B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-08-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8181 | Inventor (new situation) |
Free format text: PATRICK, WILLIAM JOHN, POUGHKEEPSIE, N.Y., US WESTDORF, WOLFGANG ALFRED, HOPEWELL JUNCTION, N.Y., US |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |