DE2560577C2 - Integrierte Injektions-Halbleiterschaltungsanordnung - Google Patents
Integrierte Injektions-HalbleiterschaltungsanordnungInfo
- Publication number
- DE2560577C2 DE2560577C2 DE19752560577 DE2560577A DE2560577C2 DE 2560577 C2 DE2560577 C2 DE 2560577C2 DE 19752560577 DE19752560577 DE 19752560577 DE 2560577 A DE2560577 A DE 2560577A DE 2560577 C2 DE2560577 C2 DE 2560577C2
- Authority
- DE
- Germany
- Prior art keywords
- area
- semiconductor
- region
- semiconductor layer
- circuit arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 65
- 238000002347 injection Methods 0.000 title description 2
- 239000007924 injection Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000926 separation method Methods 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49148565A JPS5182578A (sv) | 1974-12-27 | 1974-12-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2560577C2 true DE2560577C2 (de) | 1986-04-17 |
Family
ID=15455579
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752560577 Expired DE2560577C2 (de) | 1974-12-27 | 1975-12-29 | Integrierte Injektions-Halbleiterschaltungsanordnung |
| DE19752558975 Expired DE2558975C2 (de) | 1974-12-27 | 1975-12-29 | Integrierte Injektions-Halbleiterschaltungsanordnung |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752558975 Expired DE2558975C2 (de) | 1974-12-27 | 1975-12-29 | Integrierte Injektions-Halbleiterschaltungsanordnung |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5182578A (sv) |
| DE (2) | DE2560577C2 (sv) |
| FR (1) | FR2296269A1 (sv) |
| GB (1) | GB1528028A (sv) |
| NL (1) | NL182763C (sv) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5368087A (en) * | 1976-11-29 | 1978-06-17 | Fujitsu Ltd | Semiconductor device |
| DE3338131A1 (de) * | 1983-10-20 | 1985-05-15 | Telefunken electronic GmbH, 7100 Heilbronn | I(pfeil hoch)2(pfeil hoch)l-schaltung |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1507061A (en) * | 1974-03-26 | 1978-04-12 | Signetics Corp | Semiconductors |
| JPS5513583B2 (sv) * | 1974-11-14 | 1980-04-10 |
-
1974
- 1974-12-27 JP JP49148565A patent/JPS5182578A/ja active Pending
-
1975
- 1975-12-24 NL NL7515036A patent/NL182763C/xx not_active IP Right Cessation
- 1975-12-29 DE DE19752560577 patent/DE2560577C2/de not_active Expired
- 1975-12-29 DE DE19752558975 patent/DE2558975C2/de not_active Expired
- 1975-12-29 FR FR7539997A patent/FR2296269A1/fr active Granted
- 1975-12-29 GB GB5301375A patent/GB1528028A/en not_active Expired
Non-Patent Citations (2)
| Title |
|---|
| DE-Z.: "Valvo-Berichte", Bd. XVIII, H. 1/2, 1974, S. 215-226 * |
| In Betracht gezogenes älteres Patent: DE-PS 25 12 737 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2296269A1 (fr) | 1976-07-23 |
| DE2558975A1 (de) | 1976-07-08 |
| FR2296269B1 (sv) | 1979-10-05 |
| DE2558975C2 (de) | 1985-11-07 |
| JPS5182578A (sv) | 1976-07-20 |
| NL7515036A (nl) | 1976-06-29 |
| GB1528028A (en) | 1978-10-11 |
| NL182763C (nl) | 1988-05-02 |
| NL182763B (nl) | 1987-12-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| Q172 | Divided out of (supplement): |
Ref country code: DE Ref document number: 2558975 |
|
| 8110 | Request for examination paragraph 44 | ||
| AC | Divided out of |
Ref country code: DE Ref document number: 2558975 Format of ref document f/p: P |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |
|
| 8339 | Ceased/non-payment of the annual fee |