DE2546564A1 - Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte anordnung - Google Patents
Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte anordnungInfo
- Publication number
- DE2546564A1 DE2546564A1 DE19752546564 DE2546564A DE2546564A1 DE 2546564 A1 DE2546564 A1 DE 2546564A1 DE 19752546564 DE19752546564 DE 19752546564 DE 2546564 A DE2546564 A DE 2546564A DE 2546564 A1 DE2546564 A1 DE 2546564A1
- Authority
- DE
- Germany
- Prior art keywords
- mesa
- shaped part
- etching
- semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 72
- 238000000034 method Methods 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000005530 etching Methods 0.000 claims description 65
- 238000011282 treatment Methods 0.000 claims description 34
- 230000000873 masking effect Effects 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 238000001020 plasma etching Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 70
- 239000000758 substrate Substances 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 210000002381 plasma Anatomy 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- -1 boron ions Chemical class 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000000866 electrolytic etching Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003518 caustics Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB46726/74A GB1485015A (en) | 1974-10-29 | 1974-10-29 | Semi-conductor device manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2546564A1 true DE2546564A1 (de) | 1976-05-06 |
Family
ID=10442362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752546564 Withdrawn DE2546564A1 (de) | 1974-10-29 | 1975-10-17 | Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte anordnung |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US4028140A (en, 2012) |
| JP (1) | JPS533235B2 (en, 2012) |
| AU (1) | AU500045B2 (en, 2012) |
| BE (1) | BE834965A (en, 2012) |
| CA (1) | CA1057172A (en, 2012) |
| CH (1) | CH595697A5 (en, 2012) |
| DE (1) | DE2546564A1 (en, 2012) |
| FR (1) | FR2290033A1 (en, 2012) |
| GB (1) | GB1485015A (en, 2012) |
| NL (1) | NL7512514A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5164813A (en) * | 1988-06-24 | 1992-11-17 | Unitrode Corporation | New diode structure |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51149784A (en) * | 1975-06-17 | 1976-12-22 | Matsushita Electric Ind Co Ltd | Solid state light emission device |
| IT1068248B (it) * | 1976-11-16 | 1985-03-21 | Selenia Ind Elettroniche | Procedimento per la realizzazione di dispositivi a semiconduttore passivati con dissipatore di calore integrato |
| US4099987A (en) * | 1977-07-25 | 1978-07-11 | International Business Machines Corporation | Fabricating integrated circuits incorporating high-performance bipolar transistors |
| US4104086A (en) * | 1977-08-15 | 1978-08-01 | International Business Machines Corporation | Method for forming isolated regions of silicon utilizing reactive ion etching |
| US4162185A (en) * | 1978-03-21 | 1979-07-24 | International Business Machines Corporation | Utilizing saturated and unsaturated halocarbon gases in plasma etching to increase etch of SiO2 relative to Si |
| US4176004A (en) * | 1978-08-21 | 1979-11-27 | Westinghouse Electric Corp. | Method for modifying the characteristics of a semiconductor fusions |
| US4340900A (en) * | 1979-06-19 | 1982-07-20 | The United States Of America As Represented By The Secretary Of The Air Force | Mesa epitaxial diode with oxide passivated junction and plated heat sink |
| US4373255A (en) * | 1979-06-19 | 1983-02-15 | The United States Of America As Represented By The Secretary Of The Air Force | Method of making oxide passivated mesa epitaxial diodes with integral plated heat sink |
| US4211582A (en) * | 1979-06-28 | 1980-07-08 | International Business Machines Corporation | Process for making large area isolation trenches utilizing a two-step selective etching technique |
| FR2476912A1 (fr) * | 1980-02-22 | 1981-08-28 | Thomson Csf | Procede d'isolement des interconnexions de circuits integres, et circuit integre utilisant ce procede |
| US4351706A (en) * | 1980-03-27 | 1982-09-28 | International Business Machines Corporation | Electrochemically eroding semiconductor device |
| US4354898A (en) * | 1981-06-24 | 1982-10-19 | Bell Telephone Laboratories, Incorporated | Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures |
| US4389294A (en) * | 1981-06-30 | 1983-06-21 | International Business Machines Corporation | Method for avoiding residue on a vertical walled mesa |
| US4740477A (en) * | 1985-10-04 | 1988-04-26 | General Instrument Corporation | Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics |
| GB8607822D0 (en) * | 1986-03-27 | 1986-04-30 | Plessey Co Plc | Iii-v semiconductor devices |
| US5166769A (en) * | 1988-07-18 | 1992-11-24 | General Instrument Corporation | Passitvated mesa semiconductor and method for making same |
| US4980315A (en) * | 1988-07-18 | 1990-12-25 | General Instrument Corporation | Method of making a passivated P-N junction in mesa semiconductor structure |
| JP3230829B2 (ja) * | 1992-01-14 | 2001-11-19 | 株式会社日立製作所 | 車両用交流発電機と整流器 |
| US5695632A (en) * | 1995-05-02 | 1997-12-09 | Exxon Research And Engineering Company | Continuous in-situ combination process for upgrading heavy oil |
| CN1047469C (zh) * | 1996-09-05 | 1999-12-15 | 中国科学院半导体研究所 | 制作半导体台面侧向电流限制结构的技术 |
| US5844291A (en) * | 1996-12-20 | 1998-12-01 | Board Of Regents, The University Of Texas System | Wide wavelength range high efficiency avalanche light detector with negative feedback |
| US5880490A (en) * | 1997-07-28 | 1999-03-09 | Board Of Regents, The University Of Texas System | Semiconductor radiation detectors with intrinsic avalanche multiplication in self-limiting mode of operation |
| US6232229B1 (en) | 1999-11-19 | 2001-05-15 | Micron Technology, Inc. | Microelectronic device fabricating method, integrated circuit, and intermediate construction |
| US6514805B2 (en) * | 2001-06-30 | 2003-02-04 | Intel Corporation | Trench sidewall profile for device isolation |
| FR2829616B1 (fr) * | 2001-09-10 | 2004-03-12 | St Microelectronics Sa | Diode verticale de faible capacite |
| JP4046586B2 (ja) * | 2002-01-16 | 2008-02-13 | シャープ株式会社 | 化合物半導体素子及びその製造方法 |
| US7162133B2 (en) * | 2004-08-20 | 2007-01-09 | Agency For Science Technology And Research | Method to trim and smooth high index contrast waveguide structures |
| JP2009302222A (ja) * | 2008-06-12 | 2009-12-24 | Sanyo Electric Co Ltd | メサ型半導体装置及びその製造方法 |
| JP2010021532A (ja) * | 2008-06-12 | 2010-01-28 | Sanyo Electric Co Ltd | メサ型半導体装置及びその製造方法 |
| KR101371401B1 (ko) * | 2010-11-03 | 2014-03-10 | 한국전자통신연구원 | 애벌런치 광다이오드 및 그 형성방법 |
| JP5803366B2 (ja) * | 2011-07-14 | 2015-11-04 | 住友電気工業株式会社 | 埋め込みヘテロ構造半導体レーザの製造方法及び埋め込みヘテロ構造半導体レーザ |
| CN115083922B (zh) * | 2022-05-31 | 2025-08-12 | 中国电子科技集团公司第十三研究所 | 一种正磨角氧化镓肖特基二极管器件及其制备方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1228285A (fr) * | 1959-03-11 | 1960-08-29 | Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes | |
| NL153947B (nl) * | 1967-02-25 | 1977-07-15 | Philips Nv | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze. |
| US3509428A (en) * | 1967-10-18 | 1970-04-28 | Hughes Aircraft Co | Ion-implanted impatt diode |
| DE1963757C3 (de) * | 1968-12-27 | 1979-05-03 | Matsushita Electronics Corp., Kadoma, Osaka (Japan) | Verfahren zum Herstellen eines Mesa-Halbleiterbauelements |
| US3742593A (en) * | 1970-12-11 | 1973-07-03 | Gen Electric | Semiconductor device with positively beveled junctions and process for its manufacture |
| NL7103156A (en, 2012) * | 1971-03-10 | 1972-09-12 | Philips Nv | |
| DE2117199C3 (de) * | 1971-04-08 | 1974-08-22 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur Herstellung geätzter Muster in dünnen Schichten mit definierten Kantenprofilen |
| US3761783A (en) * | 1972-02-02 | 1973-09-25 | Sperry Rand Corp | Duel-mesa ring-shaped high frequency diode |
| US3880684A (en) * | 1973-08-03 | 1975-04-29 | Mitsubishi Electric Corp | Process for preparing semiconductor |
| US3886580A (en) * | 1973-10-09 | 1975-05-27 | Cutler Hammer Inc | Tantalum-gallium arsenide schottky barrier semiconductor device |
| US3894895A (en) * | 1973-10-29 | 1975-07-15 | Trw Inc | Mesa etching without overhang for semiconductor devices |
| US3898141A (en) * | 1974-02-08 | 1975-08-05 | Bell Telephone Labor Inc | Electrolytic oxidation and etching of III-V compound semiconductors |
| US3878008A (en) * | 1974-02-25 | 1975-04-15 | Us Navy | Method of forming high reliability mesa diode |
-
1974
- 1974-10-29 GB GB46726/74A patent/GB1485015A/en not_active Expired
-
1975
- 1975-10-17 DE DE19752546564 patent/DE2546564A1/de not_active Withdrawn
- 1975-10-22 US US05/624,726 patent/US4028140A/en not_active Expired - Lifetime
- 1975-10-22 US US05/624,724 patent/US4007104A/en not_active Expired - Lifetime
- 1975-10-23 CA CA238,325A patent/CA1057172A/en not_active Expired
- 1975-10-23 AU AU85944/75A patent/AU500045B2/en not_active Expired
- 1975-10-25 JP JP12880075A patent/JPS533235B2/ja not_active Expired
- 1975-10-27 NL NL7512514A patent/NL7512514A/xx not_active Application Discontinuation
- 1975-10-27 CH CH1390675A patent/CH595697A5/xx not_active IP Right Cessation
- 1975-10-28 BE BE161335A patent/BE834965A/xx unknown
- 1975-10-29 FR FR7533030A patent/FR2290033A1/fr active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5164813A (en) * | 1988-06-24 | 1992-11-17 | Unitrode Corporation | New diode structure |
Also Published As
| Publication number | Publication date |
|---|---|
| AU500045B2 (en) | 1979-05-10 |
| BE834965A (fr) | 1976-04-28 |
| GB1485015A (en) | 1977-09-08 |
| FR2290033A1 (fr) | 1976-05-28 |
| NL7512514A (nl) | 1976-05-04 |
| JPS533235B2 (en, 2012) | 1978-02-04 |
| JPS5167079A (en, 2012) | 1976-06-10 |
| CH595697A5 (en, 2012) | 1978-02-28 |
| AU8594475A (en) | 1977-04-28 |
| US4028140A (en) | 1977-06-07 |
| US4007104A (en) | 1977-02-08 |
| CA1057172A (en) | 1979-06-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8139 | Disposal/non-payment of the annual fee |