FR2829616B1 - Diode verticale de faible capacite - Google Patents

Diode verticale de faible capacite

Info

Publication number
FR2829616B1
FR2829616B1 FR0111680A FR0111680A FR2829616B1 FR 2829616 B1 FR2829616 B1 FR 2829616B1 FR 0111680 A FR0111680 A FR 0111680A FR 0111680 A FR0111680 A FR 0111680A FR 2829616 B1 FR2829616 B1 FR 2829616B1
Authority
FR
France
Prior art keywords
low capacity
vertical low
capacity diode
diode
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0111680A
Other languages
English (en)
Other versions
FR2829616A1 (fr
Inventor
Emmanuel Collard
Patrick Poveda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0111680A priority Critical patent/FR2829616B1/fr
Priority to EP02783155A priority patent/EP1428264A1/fr
Priority to PCT/FR2002/003080 priority patent/WO2003026020A1/fr
Priority to US10/489,153 priority patent/US6924546B2/en
Publication of FR2829616A1 publication Critical patent/FR2829616A1/fr
Application granted granted Critical
Publication of FR2829616B1 publication Critical patent/FR2829616B1/fr
Priority to US11/159,991 priority patent/US7507620B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
FR0111680A 2001-09-10 2001-09-10 Diode verticale de faible capacite Expired - Fee Related FR2829616B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0111680A FR2829616B1 (fr) 2001-09-10 2001-09-10 Diode verticale de faible capacite
EP02783155A EP1428264A1 (fr) 2001-09-10 2002-09-10 Diode verticale de faible capacite
PCT/FR2002/003080 WO2003026020A1 (fr) 2001-09-10 2002-09-10 Diode verticale de faible capacite
US10/489,153 US6924546B2 (en) 2001-09-10 2002-09-10 Low-capacity vertical diode
US11/159,991 US7507620B2 (en) 2001-09-10 2005-06-23 Low-capacity vertical diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0111680A FR2829616B1 (fr) 2001-09-10 2001-09-10 Diode verticale de faible capacite

Publications (2)

Publication Number Publication Date
FR2829616A1 FR2829616A1 (fr) 2003-03-14
FR2829616B1 true FR2829616B1 (fr) 2004-03-12

Family

ID=8867126

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0111680A Expired - Fee Related FR2829616B1 (fr) 2001-09-10 2001-09-10 Diode verticale de faible capacite

Country Status (4)

Country Link
US (2) US6924546B2 (fr)
EP (1) EP1428264A1 (fr)
FR (1) FR2829616B1 (fr)
WO (1) WO2003026020A1 (fr)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1485015A (en) * 1974-10-29 1977-09-08 Mullard Ltd Semi-conductor device manufacture
FR2559959B1 (fr) * 1984-02-21 1987-05-22 Thomson Csf Diode hyperfrequence a connexions externes prises au moyen de poutres et son procede de realisation
US4811080A (en) * 1985-08-27 1989-03-07 Fei Microwave, Inc. Monolithic pin diode and method for its manufacture
US4639756A (en) * 1986-05-05 1987-01-27 Santa Barbara Research Center Graded gap inversion layer photodiode array
US5119148A (en) * 1989-11-29 1992-06-02 Motorola, Inc. Fast damper diode and method
US5559336A (en) * 1994-07-05 1996-09-24 Santa Barbara Research Center Integrated LPE-grown structure for simultaneous detection of infrared radiation in two bands
US5646426A (en) * 1995-12-12 1997-07-08 Santa Barbara Research Center Contact metal diffusion barrier for semiconductor devices
JPH10256574A (ja) * 1997-03-14 1998-09-25 Toko Inc ダイオード装置
DE19737360C1 (de) * 1997-08-27 1999-01-21 Siemens Ag Hochfrequenzdiode und Verfahren zu deren Herstellung
JP3662402B2 (ja) * 1997-11-07 2005-06-22 三菱電機株式会社 光半導体モジュール
US6465860B2 (en) * 1998-09-01 2002-10-15 Kabushiki Kaisha Toshiba Multi-wavelength semiconductor image sensor and method of manufacturing the same
US6251501B1 (en) * 1999-03-29 2001-06-26 Delphi Technologies, Inc. Surface mount circuit device and solder bumping method therefor
DE10037103A1 (de) * 2000-07-27 2002-02-14 Aeg Infrarot Module Gmbh Multispektrale Photodiode
US6888420B2 (en) * 2002-11-14 2005-05-03 Hrl Laboratories, Llc RF MEMS switch matrix

Also Published As

Publication number Publication date
WO2003026020A1 (fr) 2003-03-27
US6924546B2 (en) 2005-08-02
US7507620B2 (en) 2009-03-24
FR2829616A1 (fr) 2003-03-14
US20050242363A1 (en) 2005-11-03
US20040207050A1 (en) 2004-10-21
EP1428264A1 (fr) 2004-06-16

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Legal Events

Date Code Title Description
ST Notification of lapse