AU500045B2 - Method of etching a semiconductor device - Google Patents

Method of etching a semiconductor device

Info

Publication number
AU500045B2
AU500045B2 AU85944/75A AU8594475A AU500045B2 AU 500045 B2 AU500045 B2 AU 500045B2 AU 85944/75 A AU85944/75 A AU 85944/75A AU 8594475 A AU8594475 A AU 8594475A AU 500045 B2 AU500045 B2 AU 500045B2
Authority
AU
Australia
Prior art keywords
etching
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU85944/75A
Other versions
AU8594475A (en
Inventor
Jg. Pierrepont M. Josh M. J. & Ayling Ma Summer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of AU8594475A publication Critical patent/AU8594475A/en
Application granted granted Critical
Publication of AU500045B2 publication Critical patent/AU500045B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
AU85944/75A 1974-10-29 1975-10-23 Method of etching a semiconductor device Expired AU500045B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB46726/74A GB1485015A (en) 1974-10-29 1974-10-29 Semi-conductor device manufacture
GBGB46726/74 1975-03-25

Publications (2)

Publication Number Publication Date
AU8594475A AU8594475A (en) 1977-04-28
AU500045B2 true AU500045B2 (en) 1979-05-10

Family

ID=10442362

Family Applications (1)

Application Number Title Priority Date Filing Date
AU85944/75A Expired AU500045B2 (en) 1974-10-29 1975-10-23 Method of etching a semiconductor device

Country Status (10)

Country Link
US (2) US4028140A (en)
JP (1) JPS533235B2 (en)
AU (1) AU500045B2 (en)
BE (1) BE834965A (en)
CA (1) CA1057172A (en)
CH (1) CH595697A5 (en)
DE (1) DE2546564A1 (en)
FR (1) FR2290033A1 (en)
GB (1) GB1485015A (en)
NL (1) NL7512514A (en)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
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JPS51149784A (en) * 1975-06-17 1976-12-22 Matsushita Electric Ind Co Ltd Solid state light emission device
IT1068248B (en) * 1976-11-16 1985-03-21 Selenia Ind Elettroniche PROCEDURE FOR THE PRODUCTION OF PASSIVATED SEMICONDUCTOR DEVICES WITH INTEGRATED HEAT DISSIPATOR
US4099987A (en) * 1977-07-25 1978-07-11 International Business Machines Corporation Fabricating integrated circuits incorporating high-performance bipolar transistors
US4104086A (en) * 1977-08-15 1978-08-01 International Business Machines Corporation Method for forming isolated regions of silicon utilizing reactive ion etching
US4162185A (en) * 1978-03-21 1979-07-24 International Business Machines Corporation Utilizing saturated and unsaturated halocarbon gases in plasma etching to increase etch of SiO2 relative to Si
US4176004A (en) * 1978-08-21 1979-11-27 Westinghouse Electric Corp. Method for modifying the characteristics of a semiconductor fusions
US4373255A (en) * 1979-06-19 1983-02-15 The United States Of America As Represented By The Secretary Of The Air Force Method of making oxide passivated mesa epitaxial diodes with integral plated heat sink
US4340900A (en) * 1979-06-19 1982-07-20 The United States Of America As Represented By The Secretary Of The Air Force Mesa epitaxial diode with oxide passivated junction and plated heat sink
US4211582A (en) * 1979-06-28 1980-07-08 International Business Machines Corporation Process for making large area isolation trenches utilizing a two-step selective etching technique
FR2476912A1 (en) * 1980-02-22 1981-08-28 Thomson Csf METHOD FOR ISOLATING INTERCONNECTIONS IN INTEGRATED CIRCUITS, AND INTEGRATED CIRCUIT USING THE SAME
US4351706A (en) * 1980-03-27 1982-09-28 International Business Machines Corporation Electrochemically eroding semiconductor device
US4354898A (en) * 1981-06-24 1982-10-19 Bell Telephone Laboratories, Incorporated Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures
US4389294A (en) * 1981-06-30 1983-06-21 International Business Machines Corporation Method for avoiding residue on a vertical walled mesa
US4740477A (en) * 1985-10-04 1988-04-26 General Instrument Corporation Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics
GB8607822D0 (en) * 1986-03-27 1986-04-30 Plessey Co Plc Iii-v semiconductor devices
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
US4980315A (en) * 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
JP3230829B2 (en) * 1992-01-14 2001-11-19 株式会社日立製作所 AC generators and rectifiers for vehicles
US5695632A (en) * 1995-05-02 1997-12-09 Exxon Research And Engineering Company Continuous in-situ combination process for upgrading heavy oil
CN1047469C (en) * 1996-09-05 1999-12-15 中国科学院半导体研究所 Technology for producing lateral current limiting structure of semiconductor mesa
US5844291A (en) * 1996-12-20 1998-12-01 Board Of Regents, The University Of Texas System Wide wavelength range high efficiency avalanche light detector with negative feedback
US5880490A (en) * 1997-07-28 1999-03-09 Board Of Regents, The University Of Texas System Semiconductor radiation detectors with intrinsic avalanche multiplication in self-limiting mode of operation
US6232229B1 (en) * 1999-11-19 2001-05-15 Micron Technology, Inc. Microelectronic device fabricating method, integrated circuit, and intermediate construction
US6514805B2 (en) * 2001-06-30 2003-02-04 Intel Corporation Trench sidewall profile for device isolation
FR2829616B1 (en) * 2001-09-10 2004-03-12 St Microelectronics Sa VERTICAL LOW CAPACITY DIODE
JP4046586B2 (en) * 2002-01-16 2008-02-13 シャープ株式会社 Compound semiconductor device and manufacturing method thereof
US7162133B2 (en) * 2004-08-20 2007-01-09 Agency For Science Technology And Research Method to trim and smooth high index contrast waveguide structures
JP2010021532A (en) * 2008-06-12 2010-01-28 Sanyo Electric Co Ltd Mesa type semiconductor device and manufacturing method thereof
JP2009302222A (en) * 2008-06-12 2009-12-24 Sanyo Electric Co Ltd Mesa type semiconductor device and method for manufacturing thereof
KR101371401B1 (en) * 2010-11-03 2014-03-10 한국전자통신연구원 Avalanche photodiode and method of forming the same
JP5803366B2 (en) * 2011-07-14 2015-11-04 住友電気工業株式会社 Method of manufacturing buried heterostructure semiconductor laser and buried heterostructure semiconductor laser

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1228285A (en) * 1959-03-11 1960-08-29 Semiconductor structures for parametric microwave amplifier
NL153947B (en) * 1967-02-25 1977-07-15 Philips Nv PROCEDURE FOR MANUFACTURING SEMICONDUCTOR DEVICES, USING A SELECTIVE ELECTROLYTIC ETCHING PROCESS AND OBTAINING SEMI-CONDUCTOR DEVICE BY APPLICATION OF THE PROCESS.
US3509428A (en) * 1967-10-18 1970-04-28 Hughes Aircraft Co Ion-implanted impatt diode
DE1963757C3 (en) * 1968-12-27 1979-05-03 Matsushita Electronics Corp., Kadoma, Osaka (Japan) Method for manufacturing a mesa semiconductor component
US3742593A (en) * 1970-12-11 1973-07-03 Gen Electric Semiconductor device with positively beveled junctions and process for its manufacture
NL7103156A (en) * 1971-03-10 1972-09-12 Philips Nv
DE2117199C3 (en) * 1971-04-08 1974-08-22 Philips Patentverwaltung Gmbh, 2000 Hamburg Process for the production of etched patterns in thin layers with defined edge profiles
US3761783A (en) * 1972-02-02 1973-09-25 Sperry Rand Corp Duel-mesa ring-shaped high frequency diode
US3880684A (en) * 1973-08-03 1975-04-29 Mitsubishi Electric Corp Process for preparing semiconductor
US3886580A (en) * 1973-10-09 1975-05-27 Cutler Hammer Inc Tantalum-gallium arsenide schottky barrier semiconductor device
US3894895A (en) * 1973-10-29 1975-07-15 Trw Inc Mesa etching without overhang for semiconductor devices
US3898141A (en) * 1974-02-08 1975-08-05 Bell Telephone Labor Inc Electrolytic oxidation and etching of III-V compound semiconductors
US3878008A (en) * 1974-02-25 1975-04-15 Us Navy Method of forming high reliability mesa diode

Also Published As

Publication number Publication date
NL7512514A (en) 1976-05-04
JPS5167079A (en) 1976-06-10
US4028140A (en) 1977-06-07
CH595697A5 (en) 1978-02-28
US4007104A (en) 1977-02-08
JPS533235B2 (en) 1978-02-04
GB1485015A (en) 1977-09-08
BE834965A (en) 1976-04-28
DE2546564A1 (en) 1976-05-06
FR2290033A1 (en) 1976-05-28
CA1057172A (en) 1979-06-26
AU8594475A (en) 1977-04-28

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