DE2519307A1 - Festkoerperschaltkreis und damit hergestellte bistabile kippschaltung - Google Patents
Festkoerperschaltkreis und damit hergestellte bistabile kippschaltungInfo
- Publication number
- DE2519307A1 DE2519307A1 DE19752519307 DE2519307A DE2519307A1 DE 2519307 A1 DE2519307 A1 DE 2519307A1 DE 19752519307 DE19752519307 DE 19752519307 DE 2519307 A DE2519307 A DE 2519307A DE 2519307 A1 DE2519307 A1 DE 2519307A1
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- emitter
- zone
- base
- circuit according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 17
- 230000000295 complement effect Effects 0.000 claims description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000013601 eggs Nutrition 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7414979A FR2269788A1 (en) | 1974-04-30 | 1974-04-30 | Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2519307A1 true DE2519307A1 (de) | 1975-11-13 |
Family
ID=9138305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752519307 Pending DE2519307A1 (de) | 1974-04-30 | 1975-04-30 | Festkoerperschaltkreis und damit hergestellte bistabile kippschaltung |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS50153558A (enExample) |
| DE (1) | DE2519307A1 (enExample) |
| FR (1) | FR2269788A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2753882A1 (de) * | 1976-12-03 | 1978-06-08 | Thomson Csf | Struktur fuer digitale integrierte schaltungen |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2414778A1 (fr) * | 1978-01-13 | 1979-08-10 | Thomson Csf | Element de memoire statique a acces aleatoire |
-
1974
- 1974-04-30 FR FR7414979A patent/FR2269788A1/fr active Granted
-
1975
- 1975-04-30 JP JP50052434A patent/JPS50153558A/ja active Pending
- 1975-04-30 DE DE19752519307 patent/DE2519307A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2753882A1 (de) * | 1976-12-03 | 1978-06-08 | Thomson Csf | Struktur fuer digitale integrierte schaltungen |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2269788A1 (en) | 1975-11-28 |
| FR2269788B1 (enExample) | 1978-04-14 |
| JPS50153558A (enExample) | 1975-12-10 |
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