FR2269788A1 - Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity - Google Patents

Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity

Info

Publication number
FR2269788A1
FR2269788A1 FR7414979A FR7414979A FR2269788A1 FR 2269788 A1 FR2269788 A1 FR 2269788A1 FR 7414979 A FR7414979 A FR 7414979A FR 7414979 A FR7414979 A FR 7414979A FR 2269788 A1 FR2269788 A1 FR 2269788A1
Authority
FR
France
Prior art keywords
zone
conductivity
transistor
substrate
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7414979A
Other languages
English (en)
French (fr)
Other versions
FR2269788B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7414979A priority Critical patent/FR2269788A1/fr
Priority to JP50052434A priority patent/JPS50153558A/ja
Priority to DE19752519307 priority patent/DE2519307A1/de
Publication of FR2269788A1 publication Critical patent/FR2269788A1/fr
Application granted granted Critical
Publication of FR2269788B1 publication Critical patent/FR2269788B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7414979A 1974-04-30 1974-04-30 Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity Granted FR2269788A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7414979A FR2269788A1 (en) 1974-04-30 1974-04-30 Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity
JP50052434A JPS50153558A (enExample) 1974-04-30 1975-04-30
DE19752519307 DE2519307A1 (de) 1974-04-30 1975-04-30 Festkoerperschaltkreis und damit hergestellte bistabile kippschaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7414979A FR2269788A1 (en) 1974-04-30 1974-04-30 Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity

Publications (2)

Publication Number Publication Date
FR2269788A1 true FR2269788A1 (en) 1975-11-28
FR2269788B1 FR2269788B1 (enExample) 1978-04-14

Family

ID=9138305

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7414979A Granted FR2269788A1 (en) 1974-04-30 1974-04-30 Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity

Country Status (3)

Country Link
JP (1) JPS50153558A (enExample)
DE (1) DE2519307A1 (enExample)
FR (1) FR2269788A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003193A1 (fr) * 1978-01-13 1979-07-25 Thomson-Csf Elément de mémoire statique à accès aléatoire

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2373163A1 (fr) * 1976-12-03 1978-06-30 Thomson Csf Structure pour circuits logiques

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003193A1 (fr) * 1978-01-13 1979-07-25 Thomson-Csf Elément de mémoire statique à accès aléatoire

Also Published As

Publication number Publication date
FR2269788B1 (enExample) 1978-04-14
DE2519307A1 (de) 1975-11-13
JPS50153558A (enExample) 1975-12-10

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Legal Events

Date Code Title Description
ST Notification of lapse