FR2269788B1 - - Google Patents
Info
- Publication number
- FR2269788B1 FR2269788B1 FR7414979A FR7414979A FR2269788B1 FR 2269788 B1 FR2269788 B1 FR 2269788B1 FR 7414979 A FR7414979 A FR 7414979A FR 7414979 A FR7414979 A FR 7414979A FR 2269788 B1 FR2269788 B1 FR 2269788B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7414979A FR2269788A1 (en) | 1974-04-30 | 1974-04-30 | Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity |
| JP50052434A JPS50153558A (enExample) | 1974-04-30 | 1975-04-30 | |
| DE19752519307 DE2519307A1 (de) | 1974-04-30 | 1975-04-30 | Festkoerperschaltkreis und damit hergestellte bistabile kippschaltung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7414979A FR2269788A1 (en) | 1974-04-30 | 1974-04-30 | Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2269788A1 FR2269788A1 (en) | 1975-11-28 |
| FR2269788B1 true FR2269788B1 (enExample) | 1978-04-14 |
Family
ID=9138305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7414979A Granted FR2269788A1 (en) | 1974-04-30 | 1974-04-30 | Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS50153558A (enExample) |
| DE (1) | DE2519307A1 (enExample) |
| FR (1) | FR2269788A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2373163A1 (fr) * | 1976-12-03 | 1978-06-30 | Thomson Csf | Structure pour circuits logiques |
| FR2414778A1 (fr) * | 1978-01-13 | 1979-08-10 | Thomson Csf | Element de memoire statique a acces aleatoire |
-
1974
- 1974-04-30 FR FR7414979A patent/FR2269788A1/fr active Granted
-
1975
- 1975-04-30 JP JP50052434A patent/JPS50153558A/ja active Pending
- 1975-04-30 DE DE19752519307 patent/DE2519307A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2269788A1 (en) | 1975-11-28 |
| DE2519307A1 (de) | 1975-11-13 |
| JPS50153558A (enExample) | 1975-12-10 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |