DE2517939C2 - Verfahren zur Herstellung einer für Infrarotstrahlung empfindlichen Photodiode - Google Patents

Verfahren zur Herstellung einer für Infrarotstrahlung empfindlichen Photodiode

Info

Publication number
DE2517939C2
DE2517939C2 DE2517939A DE2517939A DE2517939C2 DE 2517939 C2 DE2517939 C2 DE 2517939C2 DE 2517939 A DE2517939 A DE 2517939A DE 2517939 A DE2517939 A DE 2517939A DE 2517939 C2 DE2517939 C2 DE 2517939C2
Authority
DE
Germany
Prior art keywords
semiconductor body
intermediate layer
protective layer
thin intermediate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2517939A
Other languages
German (de)
English (en)
Other versions
DE2517939A1 (de
Inventor
Gerard David Paris Cohen-Solal
Alain Gilles Saint-Michel-sur-Orge Lussereau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TELECOMMUNICATIONS 75624 PARIS FR SA
Original Assignee
TELECOMMUNICATIONS 75624 PARIS FR SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TELECOMMUNICATIONS 75624 PARIS FR SA filed Critical TELECOMMUNICATIONS 75624 PARIS FR SA
Publication of DE2517939A1 publication Critical patent/DE2517939A1/de
Application granted granted Critical
Publication of DE2517939C2 publication Critical patent/DE2517939C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/69—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/153—Solar cells-implantations-laser beam

Landscapes

  • Light Receiving Elements (AREA)
DE2517939A 1974-08-06 1975-04-23 Verfahren zur Herstellung einer für Infrarotstrahlung empfindlichen Photodiode Expired DE2517939C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7427282A FR2281650A1 (fr) 1974-08-06 1974-08-06 Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede

Publications (2)

Publication Number Publication Date
DE2517939A1 DE2517939A1 (de) 1976-02-26
DE2517939C2 true DE2517939C2 (de) 1982-06-09

Family

ID=9142164

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2517939A Expired DE2517939C2 (de) 1974-08-06 1975-04-23 Verfahren zur Herstellung einer für Infrarotstrahlung empfindlichen Photodiode

Country Status (6)

Country Link
US (1) US3988774A (enExample)
JP (1) JPS5144396B2 (enExample)
DE (1) DE2517939C2 (enExample)
FR (1) FR2281650A1 (enExample)
GB (1) GB1508027A (enExample)
NL (1) NL160991C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2660229C2 (de) * 1975-12-23 1986-07-24 Société Anonyme de Télécommunications, Paris Verfahren zum Herstellen eines Photoelements

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037311A (en) * 1976-07-14 1977-07-26 U.S. Philips Corporation Methods of manufacturing infra-red detector elements
FR2376513A1 (fr) * 1976-12-31 1978-07-28 Radiotechnique Compelec Dispositif semiconducteur muni d'un film protecteur
JPS5455228A (en) * 1977-10-10 1979-05-02 Nippon Denso Co Ltd Fuel injection pump for internal combustion engine
US4170781A (en) * 1978-04-06 1979-10-09 The United States Of America As Represented By The Secretary Of The Army Photodiode and method of manufacture
EP0018744B1 (en) * 1979-05-01 1984-07-18 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Radiation detectors
JPS56169376A (en) * 1980-05-30 1981-12-26 New Japan Radio Co Ltd Light receiving semiconductor device
JPS5745289A (en) * 1980-08-29 1982-03-15 Fujitsu Ltd Production of multidimentional semiconductor device
US4376663A (en) * 1980-11-18 1983-03-15 The United States Of America As Represented By The Secretary Of The Army Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate
US4357620A (en) * 1980-11-18 1982-11-02 The United States Of America As Represented By The Secretary Of The Army Liquid-phase epitaxial growth of cdTe on HgCdTe
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
FR2592740B1 (fr) * 1986-01-08 1988-03-18 Commissariat Energie Atomique Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication
US4731640A (en) * 1986-05-20 1988-03-15 Westinghouse Electric Corp. High resistance photoconductor structure for multi-element infrared detector arrays
FR2604298B1 (fr) * 1986-09-19 1988-10-28 Commissariat Energie Atomique Procede de realisation d'une prise de contact electrique sur un substrat en hgcdte de conductivite p et application a la fabrication d'une diode n/p
US5936268A (en) * 1988-03-29 1999-08-10 Raytheon Company Epitaxial passivation of group II-VI infrared photodetectors
US4956304A (en) * 1988-04-07 1990-09-11 Santa Barbara Research Center Buried junction infrared photodetector process
US5880510A (en) * 1988-05-11 1999-03-09 Raytheon Company Graded layer passivation of group II-VI infrared photodetectors
US4910154A (en) * 1988-12-23 1990-03-20 Ford Aerospace Corporation Manufacture of monolithic infrared focal plane arrays
US4961098A (en) * 1989-07-03 1990-10-02 Santa Barbara Research Center Heterojunction photodiode array
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
JPH0492481A (ja) * 1990-08-07 1992-03-25 Mitsubishi Electric Corp 光検知装置
JP3029497B2 (ja) * 1991-12-20 2000-04-04 ローム株式会社 フォトダイオードアレイおよびその製造法
US5296384A (en) * 1992-07-21 1994-03-22 Santa Barbara Research Center Bake-stable HgCdTe photodetector and method for fabricating same
EP0635892B1 (en) * 1992-07-21 2002-06-26 Raytheon Company Bake-stable HgCdTe photodetector and method for fabricating same
US5633526A (en) * 1992-11-01 1997-05-27 Rohm Co., Ltd. Photodiode array and method for manufacturing the same
JP2859789B2 (ja) * 1992-11-13 1999-02-24 ローム株式会社 フォトダイオードアレイおよびその製法
US20120181545A1 (en) * 2009-09-30 2012-07-19 Sharp Kabushiki Kaisha Semiconductor device and method for producing same, and display device provided with semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614435B2 (de) * 1967-02-23 1979-05-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von aus Germanium bestehenden, doppeldiffundierten Halbleiteranordnungen
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
DE1948884B2 (de) * 1969-09-27 1971-09-30 Verfahren zum beseitigen von inversionsschichten

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2660229C2 (de) * 1975-12-23 1986-07-24 Société Anonyme de Télécommunications, Paris Verfahren zum Herstellen eines Photoelements

Also Published As

Publication number Publication date
NL160991B (nl) 1979-07-16
FR2281650A1 (fr) 1976-03-05
JPS5144396B2 (enExample) 1976-11-27
NL7506863A (nl) 1976-02-10
NL160991C (nl) 1979-12-17
DE2517939A1 (de) 1976-02-26
GB1508027A (en) 1978-04-19
FR2281650B1 (enExample) 1976-12-31
JPS5136088A (enExample) 1976-03-26
US3988774A (en) 1976-10-26

Similar Documents

Publication Publication Date Title
DE2517939C2 (de) Verfahren zur Herstellung einer für Infrarotstrahlung empfindlichen Photodiode
DE2654429A1 (de) Halbleitervorrichtung, insbesondere photovoltaische sonde, mit einem substrat auf der basis einer legierung cd tief x hg tief 1-x te, und verfahren fuer ihre herstellung
DE2160427C3 (enExample)
DE3334316A1 (de) Solarbatterie mit amorphem silicium
DE1153468B (de) Lichtempfindliche Halbleiteranordnung und Verfahren zu ihrer Herstellung
EP0142114B1 (de) Verfahren zum Herstellen einer Solarzelle
DE1032404B (de) Verfahren zur Herstellung von Flaechenhalbleiterelementen mit p-n-Schichten
DE1614356A1 (de) Integrierte Halbleiterbaugruppe mit komplementaeren Feldeffekttransistoren
DE1808928A1 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE2357376B2 (de) Mesa-thyristor und verfahren zu seiner herstellung
DE2225374B2 (de) Verfahren zum herstellen eines mos-feldeffekttransistors
DE19632277A1 (de) Dielektrischer Dünnfilm und eine einen Dünnfilm aufweisende Elektrolumineszenzvorrichtung, die den gleichen verwendet
DE2049507C3 (de) Lichtempfindliche Halbleiteranordnung
DE1564356A1 (de) Verfahren zum Herstellen von photoelektrischen Zellen unter Verwendung von polykristallinen pulverfoermigen Stoffen
DE1573720A1 (de) Elektro-mechanischer Wandler
DE69025784T2 (de) Nichtflüchtige Speicher-Halbleiteranordnung
DE1813551C3 (de) Hochfrequenz-Planartransistor
DE3151212A1 (de) Halbleiterelement
DE2613096A1 (de) Halbleiteranordnung
DE3617229A1 (de) Strahlungsdetektor
DE4101110A1 (de) Photoleitfaehiges material
DE2512898A1 (de) Halbleiter-photoelement mit pn- uebergang
DE2147291C3 (de) Kapazitätsdiode mit einem großen Kapazitätshub und Verfahren zu ihrer Herstellung
DE1285625C2 (de) Verfahren zur herstellung eines halbleiterbauelements
DE1959624C (de) Verfahren zur Herstellung von heteroepitaktischen Tunneldioden

Legal Events

Date Code Title Description
8126 Change of the secondary classification
D2 Grant after examination