DE2429705C3 - Schottky-Diode und Verfahren zu ihrer Herstellung - Google Patents
Schottky-Diode und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE2429705C3 DE2429705C3 DE2429705A DE2429705A DE2429705C3 DE 2429705 C3 DE2429705 C3 DE 2429705C3 DE 2429705 A DE2429705 A DE 2429705A DE 2429705 A DE2429705 A DE 2429705A DE 2429705 C3 DE2429705 C3 DE 2429705C3
- Authority
- DE
- Germany
- Prior art keywords
- doping
- surface layer
- barrier
- flat surface
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 230000008569 process Effects 0.000 title description 2
- 230000004888 barrier function Effects 0.000 claims description 85
- 239000010410 layer Substances 0.000 claims description 56
- 239000002344 surface layer Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 40
- 150000002500 ions Chemical class 0.000 claims description 25
- 238000002513 implantation Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 8
- 238000010849 ion bombardment Methods 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 claims description 2
- 230000001276 controlling effect Effects 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 32
- 230000015556 catabolic process Effects 0.000 description 18
- 229910052759 nickel Inorganic materials 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 229910001439 antimony ion Inorganic materials 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 10
- 229910052787 antimony Inorganic materials 0.000 description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- WLNBMPZUVDTASE-HXIISURNSA-N (2r,3r,4s,5r)-2-amino-3,4,5,6-tetrahydroxyhexanal;sulfuric acid Chemical compound [O-]S([O-])(=O)=O.O=C[C@H]([NH3+])[C@@H](O)[C@H](O)[C@H](O)CO.O=C[C@H]([NH3+])[C@@H](O)[C@H](O)[C@H](O)CO WLNBMPZUVDTASE-HXIISURNSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000002969 egg yolk Anatomy 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- -1 krypton ion Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3017973A GB1459231A (en) | 1973-06-26 | 1973-06-26 | Semiconductor devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2429705A1 DE2429705A1 (de) | 1975-01-16 |
| DE2429705B2 DE2429705B2 (de) | 1980-05-22 |
| DE2429705C3 true DE2429705C3 (de) | 1981-01-29 |
Family
ID=10303529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2429705A Expired DE2429705C3 (de) | 1973-06-26 | 1974-06-20 | Schottky-Diode und Verfahren zu ihrer Herstellung |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3943552A (enrdf_load_stackoverflow) |
| JP (1) | JPS5223217B2 (enrdf_load_stackoverflow) |
| CA (1) | CA1003576A (enrdf_load_stackoverflow) |
| CH (1) | CH574167A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2429705C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2235492B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1459231A (enrdf_load_stackoverflow) |
| IT (1) | IT1015298B (enrdf_load_stackoverflow) |
| NL (1) | NL163904C (enrdf_load_stackoverflow) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4917311A (enrdf_load_stackoverflow) * | 1972-06-12 | 1974-02-15 | ||
| US4064620A (en) * | 1976-01-27 | 1977-12-27 | Hughes Aircraft Company | Ion implantation process for fabricating high frequency avalanche devices |
| GB1573309A (en) * | 1976-03-24 | 1980-08-20 | Mullard Ltd | Semiconductor devices and their manufacture |
| JPS55145103A (en) * | 1979-04-25 | 1980-11-12 | Sumitomo Electric Ind Ltd | Powder hot forging method |
| US4313971A (en) * | 1979-05-29 | 1982-02-02 | Rca Corporation | Method of fabricating a Schottky barrier contact |
| DE2950644C2 (de) * | 1979-12-15 | 1985-12-12 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Schottky-Diode |
| US4350413A (en) * | 1980-04-14 | 1982-09-21 | The United States Of America As Represented By The Secretary Of The Navy | Multi-color tunable filter |
| JPS5732680A (en) * | 1980-08-05 | 1982-02-22 | Mitsubishi Electric Corp | Manufacture of schottky barrier diode |
| US4394673A (en) * | 1980-09-29 | 1983-07-19 | International Business Machines Corporation | Rare earth silicide Schottky barriers |
| GB2090053B (en) * | 1980-12-19 | 1984-09-19 | Philips Electronic Associated | Mesfet |
| US4405934A (en) * | 1981-04-13 | 1983-09-20 | Texas Instruments Incorporated | NPM Anti-saturation clamp for NPN logic gate transistor |
| JPS57178354A (en) * | 1981-04-27 | 1982-11-02 | Hitachi Ltd | Semiconductor device |
| US4783688A (en) * | 1981-12-02 | 1988-11-08 | U.S. Philips Corporation | Schottky barrier field effect transistors |
| US4471367A (en) * | 1981-12-04 | 1984-09-11 | At&T Bell Laboratories | MESFET Using a shallow junction gate structure on GaInAs |
| US4492434A (en) * | 1982-01-07 | 1985-01-08 | The United States Of America As Represented By The Secretary Of The Navy | Multi-color tunable semiconductor device |
| US4665414A (en) * | 1982-07-23 | 1987-05-12 | American Telephone And Telegraph Company, At&T Bell Laboratories | Schottky-barrier MOS devices |
| JPS59135779A (ja) * | 1983-01-24 | 1984-08-04 | Mitsubishi Electric Corp | 赤外線検出器 |
| JPS60162701A (ja) * | 1984-02-01 | 1985-08-24 | Toyota Motor Corp | 焼結鍛造品の製造方法 |
| US4587096A (en) * | 1985-05-23 | 1986-05-06 | Inco Alloys International, Inc. | Canless method for hot working gas atomized powders |
| US4742017A (en) * | 1986-06-20 | 1988-05-03 | Ford Aerospace Corporation | Implantation method for forming Schottky barrier photodiodes |
| GB9907021D0 (en) | 1999-03-27 | 1999-05-19 | Koninkl Philips Electronics Nv | Switch circuit and semiconductor switch for battery-powered equipment |
| US20050098843A1 (en) * | 2002-12-01 | 2005-05-12 | Igor Touzov | Addressable active materials and technology applications |
| GB0401579D0 (en) | 2004-01-24 | 2004-02-25 | Koninkl Philips Electronics Nv | Transistor manufacture |
| US7772063B2 (en) * | 2004-08-11 | 2010-08-10 | Identifi Technologies, Inc. | Reduced-step CMOS processes for low-cost radio frequency identification devices |
| EP1641029A1 (en) * | 2004-09-27 | 2006-03-29 | STMicroelectronics S.r.l. | Process for manufacturing a Schottky contact on a semiconductor substrate |
| JP2006318956A (ja) * | 2005-05-10 | 2006-11-24 | Sumitomo Electric Ind Ltd | ショットキーダイオードを有する半導体装置 |
| JP2011119606A (ja) * | 2009-12-07 | 2011-06-16 | Sen Corp | 半導体装置の製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3560809A (en) * | 1968-03-04 | 1971-02-02 | Hitachi Ltd | Variable capacitance rectifying junction diode |
| US3550260A (en) * | 1968-12-26 | 1970-12-29 | Motorola Inc | Method for making a hot carrier pn-diode |
| US3897275A (en) * | 1969-05-22 | 1975-07-29 | Texas Instruments Inc | Process for fabricating schottky barrier phototransistor |
| BE759057A (enrdf_load_stackoverflow) * | 1969-11-19 | 1971-05-17 | Philips Nv | |
| US3706128A (en) * | 1970-06-30 | 1972-12-19 | Varian Associates | Surface barrier diode having a hypersensitive n region forming a hypersensitive voltage variable capacitor |
| US3634738A (en) * | 1970-10-06 | 1972-01-11 | Kev Electronics Corp | Diode having a voltage variable capacitance characteristic and method of making same |
| DE2104752B2 (de) * | 1971-02-02 | 1975-02-20 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode |
| US3719797A (en) * | 1971-12-16 | 1973-03-06 | Bell Telephone Labor Inc | Solid state temperature sensor employing a pair of dissimilar schottky-barrier diodes |
-
1973
- 1973-06-26 GB GB3017973A patent/GB1459231A/en not_active Expired
-
1974
- 1974-06-18 US US05/480,540 patent/US3943552A/en not_active Expired - Lifetime
- 1974-06-19 CA CA202,852A patent/CA1003576A/en not_active Expired
- 1974-06-20 DE DE2429705A patent/DE2429705C3/de not_active Expired
- 1974-06-21 IT IT24278/74A patent/IT1015298B/it active
- 1974-06-24 NL NL7408438.A patent/NL163904C/xx not_active IP Right Cessation
- 1974-06-24 CH CH863874A patent/CH574167A5/xx not_active IP Right Cessation
- 1974-06-25 FR FR7422048A patent/FR2235492B1/fr not_active Expired
- 1974-06-25 JP JP49071922A patent/JPS5223217B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL163904C (nl) | 1980-10-15 |
| US3943552A (en) | 1976-03-09 |
| FR2235492B1 (enrdf_load_stackoverflow) | 1979-01-05 |
| CH574167A5 (enrdf_load_stackoverflow) | 1976-03-31 |
| DE2429705A1 (de) | 1975-01-16 |
| CA1003576A (en) | 1977-01-11 |
| GB1459231A (en) | 1976-12-22 |
| NL163904B (nl) | 1980-05-16 |
| FR2235492A1 (enrdf_load_stackoverflow) | 1975-01-24 |
| DE2429705B2 (de) | 1980-05-22 |
| JPS5223217B2 (enrdf_load_stackoverflow) | 1977-06-22 |
| JPS5034484A (enrdf_load_stackoverflow) | 1975-04-02 |
| IT1015298B (it) | 1977-05-10 |
| NL7408438A (enrdf_load_stackoverflow) | 1974-12-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |