DE2364785C3 - Integrierter Halbleiterspeicher mit nach guten und defekten Speicherzellen sortierten Speicherzellen - Google Patents
Integrierter Halbleiterspeicher mit nach guten und defekten Speicherzellen sortierten SpeicherzellenInfo
- Publication number
- DE2364785C3 DE2364785C3 DE2364785A DE2364785A DE2364785C3 DE 2364785 C3 DE2364785 C3 DE 2364785C3 DE 2364785 A DE2364785 A DE 2364785A DE 2364785 A DE2364785 A DE 2364785A DE 2364785 C3 DE2364785 C3 DE 2364785C3
- Authority
- DE
- Germany
- Prior art keywords
- memory
- defective
- octant
- semiconductor
- address
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 139
- 230000015654 memory Effects 0.000 title claims description 106
- 230000002950 deficient Effects 0.000 title claims description 71
- 235000012431 wafers Nutrition 0.000 claims description 70
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 210000004027 cell Anatomy 0.000 description 37
- 230000006870 function Effects 0.000 description 17
- 238000003860 storage Methods 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 12
- 239000003795 chemical substances by application Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 230000000295 complement effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 102100027890 Homeobox protein Nkx-2.3 Human genes 0.000 description 1
- 101000632181 Homo sapiens Homeobox protein Nkx-2.3 Proteins 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00319598A US3845476A (en) | 1972-12-29 | 1972-12-29 | Monolithic memory using partially defective chips |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2364785A1 DE2364785A1 (de) | 1974-07-18 |
| DE2364785B2 DE2364785B2 (de) | 1978-01-05 |
| DE2364785C3 true DE2364785C3 (de) | 1978-09-07 |
Family
ID=23242929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2364785A Expired DE2364785C3 (de) | 1972-12-29 | 1973-12-27 | Integrierter Halbleiterspeicher mit nach guten und defekten Speicherzellen sortierten Speicherzellen |
Country Status (10)
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5528160B2 (US07902200-20110308-C00004.png) * | 1974-12-16 | 1980-07-25 | ||
| JPS5231624A (en) * | 1975-05-15 | 1977-03-10 | Nippon Telegr & Teleph Corp <Ntt> | Memory system |
| US4047163A (en) * | 1975-07-03 | 1977-09-06 | Texas Instruments Incorporated | Fault-tolerant cell addressable array |
| US4051354A (en) * | 1975-07-03 | 1977-09-27 | Texas Instruments Incorporated | Fault-tolerant cell addressable array |
| JPS52124826A (en) * | 1976-04-12 | 1977-10-20 | Fujitsu Ltd | Memory unit |
| US4228528B2 (en) * | 1979-02-09 | 1992-10-06 | Memory with redundant rows and columns | |
| US4495603A (en) * | 1980-07-31 | 1985-01-22 | Varshney Ramesh C | Test system for segmented memory |
| US4365318A (en) * | 1980-09-15 | 1982-12-21 | International Business Machines Corp. | Two speed recirculating memory system using partially good components |
| US4446534A (en) * | 1980-12-08 | 1984-05-01 | National Semiconductor Corporation | Programmable fuse circuit |
| US4376300A (en) * | 1981-01-02 | 1983-03-08 | Intel Corporation | Memory system employing mostly good memories |
| US4450524A (en) * | 1981-09-23 | 1984-05-22 | Rca Corporation | Single chip microcomputer with external decoder and memory and internal logic for disabling the ROM and relocating the RAM |
| US4476546A (en) * | 1982-03-19 | 1984-10-09 | Fairchild Camera & Instrument Corp. | Programmable address buffer for partial products |
| GB2129585B (en) * | 1982-10-29 | 1986-03-05 | Inmos Ltd | Memory system including a faulty rom array |
| US4581739A (en) * | 1984-04-09 | 1986-04-08 | International Business Machines Corporation | Electronically selectable redundant array (ESRA) |
| US4653050A (en) * | 1984-12-03 | 1987-03-24 | Trw Inc. | Fault-tolerant memory system |
| US4922451A (en) * | 1987-03-23 | 1990-05-01 | International Business Machines Corporation | Memory re-mapping in a microcomputer system |
| US5051994A (en) * | 1989-04-28 | 1991-09-24 | International Business Machines Corporation | Computer memory module |
| US5644732A (en) * | 1990-07-13 | 1997-07-01 | Sun Microsystems, Inc. | Method and apparatus for assigning addresses to a computer system's three dimensional packing arrangement |
| JPH09282900A (ja) * | 1996-04-11 | 1997-10-31 | Oki Electric Ind Co Ltd | メモリモジュール |
| US6134172A (en) * | 1996-12-26 | 2000-10-17 | Rambus Inc. | Apparatus for sharing sense amplifiers between memory banks |
| US5923682A (en) * | 1997-01-29 | 1999-07-13 | Micron Technology, Inc. | Error correction chip for memory applications |
| US6314527B1 (en) * | 1998-03-05 | 2001-11-06 | Micron Technology, Inc. | Recovery of useful areas of partially defective synchronous memory components |
| US6332183B1 (en) * | 1998-03-05 | 2001-12-18 | Micron Technology, Inc. | Method for recovery of useful areas of partially defective synchronous memory components |
| US6381708B1 (en) | 1998-04-28 | 2002-04-30 | Micron Technology, Inc. | Method for decoding addresses for a defective memory array |
| US6381707B1 (en) | 1998-04-28 | 2002-04-30 | Micron Technology, Inc. | System for decoding addresses for a defective memory array |
| TW446955B (en) * | 1998-10-30 | 2001-07-21 | Siemens Ag | The read/write memory with self-testing device and its associated test method |
| US6496876B1 (en) | 1998-12-21 | 2002-12-17 | Micron Technology, Inc. | System and method for storing a tag to identify a functional storage location in a memory device |
| US6144598A (en) * | 1999-07-06 | 2000-11-07 | Micron Technology, Inc. | Method and apparatus for efficiently testing rambus memory devices |
| US6163489A (en) | 1999-07-16 | 2000-12-19 | Micron Technology Inc. | Semiconductor memory having multiple redundant columns with offset segmentation boundaries |
| US6578157B1 (en) | 2000-03-06 | 2003-06-10 | Micron Technology, Inc. | Method and apparatus for recovery of useful areas of partially defective direct rambus rimm components |
| US7269765B1 (en) | 2000-04-13 | 2007-09-11 | Micron Technology, Inc. | Method and apparatus for storing failing part locations in a module |
| KR100481849B1 (ko) * | 2001-12-04 | 2005-04-11 | 삼성전자주식회사 | 용량 변경이 가능한 캐쉬 메모리 및 이를 구비한 프로세서칩 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3331058A (en) * | 1964-12-24 | 1967-07-11 | Fairchild Camera Instr Co | Error free memory |
| US3444526A (en) * | 1966-06-08 | 1969-05-13 | Ibm | Storage system using a storage device having defective storage locations |
| US3432812A (en) * | 1966-07-15 | 1969-03-11 | Ibm | Memory system |
| US3588830A (en) * | 1968-01-17 | 1971-06-28 | Ibm | System for using a memory having irremediable bad bits |
| NL149927B (nl) * | 1968-02-19 | 1976-06-15 | Philips Nv | Woordgeorganiseerd geheugen. |
| US3633175A (en) * | 1969-05-15 | 1972-01-04 | Honeywell Inc | Defect-tolerant digital memory system |
| US3654610A (en) * | 1970-09-28 | 1972-04-04 | Fairchild Camera Instr Co | Use of faulty storage circuits by position coding |
| US3714637A (en) * | 1970-09-30 | 1973-01-30 | Ibm | Monolithic memory utilizing defective storage cells |
| US3715735A (en) * | 1970-12-14 | 1973-02-06 | Monolithic Memories Inc | Segmentized memory module and method of making same |
-
1972
- 1972-12-29 US US00319598A patent/US3845476A/en not_active Expired - Lifetime
-
1973
- 1973-11-15 JP JP12782773A patent/JPS5524199B2/ja not_active Expired
- 1973-11-20 CA CA186,208A patent/CA1005575A/en not_active Expired
- 1973-11-28 FR FR7343099A patent/FR2212601B1/fr not_active Expired
- 1973-12-13 BR BR9768/73A patent/BR7309768D0/pt unknown
- 1973-12-13 GB GB5793573A patent/GB1455716A/en not_active Expired
- 1973-12-14 BE BE138877A patent/BE808649A/xx unknown
- 1973-12-17 IT IT42920/73A patent/IT1001138B/it active
- 1973-12-27 DE DE2364785A patent/DE2364785C3/de not_active Expired
- 1973-12-28 NL NL7317756A patent/NL7317756A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2364785B2 (de) | 1978-01-05 |
| JPS5524199B2 (US07902200-20110308-C00004.png) | 1980-06-27 |
| CA1005575A (en) | 1977-02-15 |
| BR7309768D0 (pt) | 1974-08-22 |
| GB1455716A (en) | 1976-11-17 |
| BE808649A (fr) | 1974-03-29 |
| JPS4998938A (US07902200-20110308-C00004.png) | 1974-09-19 |
| NL7317756A (US07902200-20110308-C00004.png) | 1974-07-02 |
| FR2212601B1 (US07902200-20110308-C00004.png) | 1976-06-25 |
| DE2364785A1 (de) | 1974-07-18 |
| US3845476A (en) | 1974-10-29 |
| IT1001138B (it) | 1976-04-20 |
| FR2212601A1 (US07902200-20110308-C00004.png) | 1974-07-26 |
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| DE2004934A1 (US07902200-20110308-C00004.png) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |