BE808649A - Procede de realisation de memoire monolithique utilisant des blocs partiellement defectueux et memoire ainsi obtenue - Google Patents

Procede de realisation de memoire monolithique utilisant des blocs partiellement defectueux et memoire ainsi obtenue

Info

Publication number
BE808649A
BE808649A BE138877A BE138877A BE808649A BE 808649 A BE808649 A BE 808649A BE 138877 A BE138877 A BE 138877A BE 138877 A BE138877 A BE 138877A BE 808649 A BE808649 A BE 808649A
Authority
BE
Belgium
Prior art keywords
memory
realization process
defective blocks
partially defective
monolithic
Prior art date
Application number
BE138877A
Other languages
English (en)
Inventor
R F Boehm
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BE808649A publication Critical patent/BE808649A/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
BE138877A 1972-12-29 1973-12-14 Procede de realisation de memoire monolithique utilisant des blocs partiellement defectueux et memoire ainsi obtenue BE808649A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00319598A US3845476A (en) 1972-12-29 1972-12-29 Monolithic memory using partially defective chips

Publications (1)

Publication Number Publication Date
BE808649A true BE808649A (fr) 1974-03-29

Family

ID=23242929

Family Applications (1)

Application Number Title Priority Date Filing Date
BE138877A BE808649A (fr) 1972-12-29 1973-12-14 Procede de realisation de memoire monolithique utilisant des blocs partiellement defectueux et memoire ainsi obtenue

Country Status (10)

Country Link
US (1) US3845476A (fr)
JP (1) JPS5524199B2 (fr)
BE (1) BE808649A (fr)
BR (1) BR7309768D0 (fr)
CA (1) CA1005575A (fr)
DE (1) DE2364785C3 (fr)
FR (1) FR2212601B1 (fr)
GB (1) GB1455716A (fr)
IT (1) IT1001138B (fr)
NL (1) NL7317756A (fr)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528160B2 (fr) * 1974-12-16 1980-07-25
JPS5231624A (en) * 1975-05-15 1977-03-10 Nippon Telegr & Teleph Corp <Ntt> Memory system
US4047163A (en) * 1975-07-03 1977-09-06 Texas Instruments Incorporated Fault-tolerant cell addressable array
US4051354A (en) * 1975-07-03 1977-09-27 Texas Instruments Incorporated Fault-tolerant cell addressable array
JPS52124826A (en) * 1976-04-12 1977-10-20 Fujitsu Ltd Memory unit
US4228528B2 (en) * 1979-02-09 1992-10-06 Memory with redundant rows and columns
US4495603A (en) * 1980-07-31 1985-01-22 Varshney Ramesh C Test system for segmented memory
US4365318A (en) * 1980-09-15 1982-12-21 International Business Machines Corp. Two speed recirculating memory system using partially good components
US4446534A (en) * 1980-12-08 1984-05-01 National Semiconductor Corporation Programmable fuse circuit
US4376300A (en) * 1981-01-02 1983-03-08 Intel Corporation Memory system employing mostly good memories
US4450524A (en) * 1981-09-23 1984-05-22 Rca Corporation Single chip microcomputer with external decoder and memory and internal logic for disabling the ROM and relocating the RAM
US4476546A (en) * 1982-03-19 1984-10-09 Fairchild Camera & Instrument Corp. Programmable address buffer for partial products
GB2129585B (en) * 1982-10-29 1986-03-05 Inmos Ltd Memory system including a faulty rom array
US4581739A (en) * 1984-04-09 1986-04-08 International Business Machines Corporation Electronically selectable redundant array (ESRA)
US4653050A (en) * 1984-12-03 1987-03-24 Trw Inc. Fault-tolerant memory system
US4922451A (en) * 1987-03-23 1990-05-01 International Business Machines Corporation Memory re-mapping in a microcomputer system
US5051994A (en) * 1989-04-28 1991-09-24 International Business Machines Corporation Computer memory module
US5644732A (en) * 1990-07-13 1997-07-01 Sun Microsystems, Inc. Method and apparatus for assigning addresses to a computer system's three dimensional packing arrangement
JPH09282900A (ja) * 1996-04-11 1997-10-31 Oki Electric Ind Co Ltd メモリモジュール
US6134172A (en) * 1996-12-26 2000-10-17 Rambus Inc. Apparatus for sharing sense amplifiers between memory banks
US5923682A (en) * 1997-01-29 1999-07-13 Micron Technology, Inc. Error correction chip for memory applications
US6332183B1 (en) * 1998-03-05 2001-12-18 Micron Technology, Inc. Method for recovery of useful areas of partially defective synchronous memory components
US6314527B1 (en) 1998-03-05 2001-11-06 Micron Technology, Inc. Recovery of useful areas of partially defective synchronous memory components
US6381708B1 (en) 1998-04-28 2002-04-30 Micron Technology, Inc. Method for decoding addresses for a defective memory array
US6381707B1 (en) 1998-04-28 2002-04-30 Micron Technology, Inc. System for decoding addresses for a defective memory array
TW446955B (en) * 1998-10-30 2001-07-21 Siemens Ag The read/write memory with self-testing device and its associated test method
US6496876B1 (en) 1998-12-21 2002-12-17 Micron Technology, Inc. System and method for storing a tag to identify a functional storage location in a memory device
US6144598A (en) * 1999-07-06 2000-11-07 Micron Technology, Inc. Method and apparatus for efficiently testing rambus memory devices
US6163489A (en) * 1999-07-16 2000-12-19 Micron Technology Inc. Semiconductor memory having multiple redundant columns with offset segmentation boundaries
US6578157B1 (en) 2000-03-06 2003-06-10 Micron Technology, Inc. Method and apparatus for recovery of useful areas of partially defective direct rambus rimm components
US7269765B1 (en) * 2000-04-13 2007-09-11 Micron Technology, Inc. Method and apparatus for storing failing part locations in a module
KR100481849B1 (ko) * 2001-12-04 2005-04-11 삼성전자주식회사 용량 변경이 가능한 캐쉬 메모리 및 이를 구비한 프로세서칩

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3331058A (en) * 1964-12-24 1967-07-11 Fairchild Camera Instr Co Error free memory
US3444526A (en) * 1966-06-08 1969-05-13 Ibm Storage system using a storage device having defective storage locations
US3432812A (en) * 1966-07-15 1969-03-11 Ibm Memory system
US3588830A (en) * 1968-01-17 1971-06-28 Ibm System for using a memory having irremediable bad bits
NL149927B (nl) * 1968-02-19 1976-06-15 Philips Nv Woordgeorganiseerd geheugen.
US3633175A (en) * 1969-05-15 1972-01-04 Honeywell Inc Defect-tolerant digital memory system
US3654610A (en) * 1970-09-28 1972-04-04 Fairchild Camera Instr Co Use of faulty storage circuits by position coding
US3714637A (en) * 1970-09-30 1973-01-30 Ibm Monolithic memory utilizing defective storage cells
US3715735A (en) * 1970-12-14 1973-02-06 Monolithic Memories Inc Segmentized memory module and method of making same

Also Published As

Publication number Publication date
DE2364785C3 (de) 1978-09-07
NL7317756A (fr) 1974-07-02
JPS4998938A (fr) 1974-09-19
DE2364785A1 (de) 1974-07-18
FR2212601A1 (fr) 1974-07-26
GB1455716A (en) 1976-11-17
US3845476A (en) 1974-10-29
CA1005575A (en) 1977-02-15
DE2364785B2 (de) 1978-01-05
BR7309768D0 (pt) 1974-08-22
JPS5524199B2 (fr) 1980-06-27
IT1001138B (it) 1976-04-20
FR2212601B1 (fr) 1976-06-25

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