BE785380A - Procede de construction d'une memoire monolithique utilisant des cellules de memoire defectueuses et memoire ainsi obtenue - Google Patents

Procede de construction d'une memoire monolithique utilisant des cellules de memoire defectueuses et memoire ainsi obtenue

Info

Publication number
BE785380A
BE785380A BE785380A BE785380A BE785380A BE 785380 A BE785380 A BE 785380A BE 785380 A BE785380 A BE 785380A BE 785380 A BE785380 A BE 785380A BE 785380 A BE785380 A BE 785380A
Authority
BE
Belgium
Prior art keywords
memory
constructing
monolithic
defective
cells
Prior art date
Application number
BE785380A
Other languages
English (en)
Inventor
W F Beausoleil
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BE785380A publication Critical patent/BE785380A/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1012—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using codes or arrangements adapted for a specific type of error
    • G06F11/1024—Identification of the type of error

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Hardware Redundancy (AREA)
BE785380A 1971-06-25 1972-06-23 Procede de construction d'une memoire monolithique utilisant des cellules de memoire defectueuses et memoire ainsi obtenue BE785380A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15663771A 1971-06-25 1971-06-25

Publications (1)

Publication Number Publication Date
BE785380A true BE785380A (fr) 1972-10-16

Family

ID=22560395

Family Applications (1)

Application Number Title Priority Date Filing Date
BE785380A BE785380A (fr) 1971-06-25 1972-06-23 Procede de construction d'une memoire monolithique utilisant des cellules de memoire defectueuses et memoire ainsi obtenue

Country Status (11)

Country Link
US (1) US3735368A (fr)
JP (1) JPS5210613B1 (fr)
AU (1) AU458408B2 (fr)
BE (1) BE785380A (fr)
BR (1) BR7204117D0 (fr)
CA (1) CA960775A (fr)
CH (1) CH554052A (fr)
FR (1) FR2143342B1 (fr)
GB (1) GB1354849A (fr)
IT (1) IT950714B (fr)
NL (1) NL7207823A (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1377859A (en) * 1972-08-03 1974-12-18 Catt I Digital integrated circuits
US4044341A (en) * 1976-03-22 1977-08-23 Rca Corporation Memory array
US4228528B2 (en) * 1979-02-09 1992-10-06 Memory with redundant rows and columns
WO1982002793A1 (fr) * 1981-02-02 1982-08-19 Otoole James E Circuit d'identification avec memoire a semi-conducteur a element redondant
US4430727A (en) * 1981-11-10 1984-02-07 International Business Machines Corp. Storage element reconfiguration
JPH0670880B2 (ja) * 1983-01-21 1994-09-07 株式会社日立マイコンシステム 半導体記憶装置
US4922451A (en) * 1987-03-23 1990-05-01 International Business Machines Corporation Memory re-mapping in a microcomputer system
US5088066A (en) * 1989-02-10 1992-02-11 Intel Corporation Redundancy decoding circuit using n-channel transistors
US5031142A (en) * 1989-02-10 1991-07-09 Intel Corporation Reset circuit for redundant memory using CAM cells
EP0675502B1 (fr) * 1989-04-13 2005-05-25 SanDisk Corporation Système EEPROM avec effacement en bloc contenant des puces multiples
US5051994A (en) * 1989-04-28 1991-09-24 International Business Machines Corporation Computer memory module
DE69027030T2 (de) * 1989-07-06 1996-12-12 Mv Ltd Eine fehlertolerante datenspeicherungsanordnung
US5128941A (en) * 1989-12-20 1992-07-07 Bull Hn Information Systems Inc. Method of organizing a memory for fault tolerance
US4992984A (en) * 1989-12-28 1991-02-12 International Business Machines Corporation Memory module utilizing partially defective memory chips
US5134616A (en) * 1990-02-13 1992-07-28 International Business Machines Corporation Dynamic ram with on-chip ecc and optimized bit and word redundancy
GB9023867D0 (en) * 1990-11-02 1990-12-12 Mv Ltd Improvements relating to a fault tolerant storage system
GB9305801D0 (en) * 1993-03-19 1993-05-05 Deans Alexander R Semiconductor memory system
GB2291516A (en) * 1995-03-28 1996-01-24 Memory Corp Plc Provision of write capability in partial memory systems
US6332183B1 (en) 1998-03-05 2001-12-18 Micron Technology, Inc. Method for recovery of useful areas of partially defective synchronous memory components
US6314527B1 (en) 1998-03-05 2001-11-06 Micron Technology, Inc. Recovery of useful areas of partially defective synchronous memory components
US6381708B1 (en) 1998-04-28 2002-04-30 Micron Technology, Inc. Method for decoding addresses for a defective memory array
US6381707B1 (en) 1998-04-28 2002-04-30 Micron Technology, Inc. System for decoding addresses for a defective memory array
US6496876B1 (en) 1998-12-21 2002-12-17 Micron Technology, Inc. System and method for storing a tag to identify a functional storage location in a memory device
US7111190B2 (en) 2001-02-23 2006-09-19 Intel Corporation Method and apparatus for reconfigurable memory
US6578157B1 (en) 2000-03-06 2003-06-10 Micron Technology, Inc. Method and apparatus for recovery of useful areas of partially defective direct rambus rimm components
US7269765B1 (en) * 2000-04-13 2007-09-11 Micron Technology, Inc. Method and apparatus for storing failing part locations in a module
KR102707649B1 (ko) * 2016-12-22 2024-09-20 에스케이하이닉스 주식회사 에러 정정 코드 회로를 갖는 반도체 메모리 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL281825A (fr) * 1961-08-08
US3444526A (en) * 1966-06-08 1969-05-13 Ibm Storage system using a storage device having defective storage locations
US3434116A (en) * 1966-06-15 1969-03-18 Ibm Scheme for circumventing bad memory cells
US3588830A (en) * 1968-01-17 1971-06-28 Ibm System for using a memory having irremediable bad bits

Also Published As

Publication number Publication date
GB1354849A (en) 1974-06-05
DE2230759B2 (de) 1976-12-30
IT950714B (it) 1973-06-20
CH554052A (de) 1974-09-13
DE2230759A1 (de) 1973-01-11
AU458408B2 (en) 1975-02-27
FR2143342A1 (fr) 1973-02-02
BR7204117D0 (pt) 1973-06-14
US3735368A (en) 1973-05-22
CA960775A (en) 1975-01-07
FR2143342B1 (fr) 1978-03-03
AU4390772A (en) 1974-01-03
JPS5210613B1 (fr) 1977-03-25
NL7207823A (fr) 1972-12-28

Similar Documents

Publication Publication Date Title
BE785380A (fr) Procede de construction d'une memoire monolithique utilisant des cellules de memoire defectueuses et memoire ainsi obtenue
BE773268A (fr) Methode de realisation d'une memoire monolithique utilisant descellulesd'emmagasinage defectueuses, et memoire ainsi obtenue
BE808649A (fr) Procede de realisation de memoire monolithique utilisant des blocs partiellement defectueux et memoire ainsi obtenue
IT1007513B (it) Memoria monolitica utilizzante celle di memoria difettose
DK136561B (da) Battericelle og fremgangsmåde til dens fremstilling.
IT1050143B (it) Impianto e metodo di purificazione dell acqua
DK674374A (da) Brændselscelle og fremgangsmåde til fremstilling deraf.
BE806231A (fr) Cellules electrolytiques et procedes y relatifs
BE751406A (fr) Procede de fabrication d'elements combustibles et/ou fertiles destines a des reacteurs nucleaires
BE814138A (fr) Procede et elements de construction de batiments constitues de cellules prefabriquees tridimensionnelles
IT999848B (it) Elemento combustibile nucleare e metodo di produzione dello stesso
IT955478B (it) Impianto di celle di memoria per matrici elettroniche
BE775987A (fr) Procede de fabrication d'une membrane seche et semi-permeable d'acetatede cellulose
IT1000224B (it) Processo di fabbricazione di composti alogenofenolsolfonici ed eventualmente di alogenofenoli
FR2284366A1 (fr) Microcapsules et double paroi et leur production
BE792455A (fr) Procede et installation pour l'execution des cellules spatialesen betonarme
IT981795B (it) Elemento di combustibile nucleare
IT977599B (it) Combustibile nucleare e procedimen to per la sua fabbricazione
BE786522A (fr) Procede de fabrication de barres de combustible nucleaire contenant du plutonium
IT988646B (it) Elemento di combustibile nucleare
DK290777A (da) Cylindrisk elektrokemisk generator og fremgangsmade til dens fremstilling
FR1201567A (fr) Constructions d'ensembles par éléments préfabriqués
BE795577A (fr) Nouveaux polyols et polyurethanes
FR1408197A (fr) Procédé de fabrication d'éléments de pile à combustible et éléments de pile ainsi fabriqués
CH539919A (de) Supraleitende Speicherzelle