IT1007513B - Memoria monolitica utilizzante celle di memoria difettose - Google Patents

Memoria monolitica utilizzante celle di memoria difettose

Info

Publication number
IT1007513B
IT1007513B IT7224373A IT2437372A IT1007513B IT 1007513 B IT1007513 B IT 1007513B IT 7224373 A IT7224373 A IT 7224373A IT 2437372 A IT2437372 A IT 2437372A IT 1007513 B IT1007513 B IT 1007513B
Authority
IT
Italy
Prior art keywords
memory
monolithic
defective
memory cells
cells
Prior art date
Application number
IT7224373A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1007513B publication Critical patent/IT1007513B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/76Masking faults in memories by using spares or by reconfiguring using address translation or modifications
IT7224373A 1971-11-15 1972-05-16 Memoria monolitica utilizzante celle di memoria difettose IT1007513B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19886971A 1971-11-15 1971-11-15

Publications (1)

Publication Number Publication Date
IT1007513B true IT1007513B (it) 1976-10-30

Family

ID=22735194

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7224373A IT1007513B (it) 1971-11-15 1972-05-16 Memoria monolitica utilizzante celle di memoria difettose

Country Status (7)

Country Link
US (1) US3781826A (it)
JP (1) JPS5145213B2 (it)
CA (1) CA988220A (it)
FR (1) FR2160391B2 (it)
IT (1) IT1007513B (it)
NL (1) NL180886C (it)
SE (1) SE391056B (it)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1461245A (en) * 1973-01-28 1977-01-13 Hawker Siddeley Dynamics Ltd Reliability of random access memory systems
US3940740A (en) * 1973-06-27 1976-02-24 Actron Industries, Inc. Method for providing reconfigurable microelectronic circuit devices and products produced thereby
USRE31318E (en) * 1973-09-10 1983-07-19 Computer Automation, Inc. Automatic modular memory address allocation system
US3900837A (en) * 1974-02-04 1975-08-19 Honeywell Inf Systems Variably addressable semiconductor mass memory
US3882470A (en) * 1974-02-04 1975-05-06 Honeywell Inf Systems Multiple register variably addressable semiconductor mass memory
NL7415966A (nl) * 1974-12-09 1976-06-11 Philips Nv Werkwijze en inrichting voor het opslaan van binaire informatie-elementen.
US4006457A (en) * 1975-02-18 1977-02-01 Motorola, Inc. Logic circuitry for selection of dedicated registers
US4024509A (en) * 1975-06-30 1977-05-17 Honeywell Information Systems, Inc. CCD register array addressing system including apparatus for by-passing selected arrays
US4051354A (en) * 1975-07-03 1977-09-27 Texas Instruments Incorporated Fault-tolerant cell addressable array
US4047163A (en) * 1975-07-03 1977-09-06 Texas Instruments Incorporated Fault-tolerant cell addressable array
US4152778A (en) * 1976-09-30 1979-05-01 Raytheon Company Digital computer memory
JPS5383538A (en) * 1976-12-29 1978-07-24 Takeda Riken Ind Co Ltd Memory tester
FR2379112A1 (fr) * 1977-01-27 1978-08-25 Cii Honeywell Bull Mode d'ecriture d'informations concernant les defauts d'un support d'enregistrement magnetique
US4162541A (en) * 1977-02-17 1979-07-24 Xerox Corporation Apparatus for overscribing binary data of a selected polarity into a semiconductor store
US4158227A (en) * 1977-10-12 1979-06-12 Bunker Ramo Corporation Paged memory mapping with elimination of recurrent decoding
US4188670A (en) * 1978-01-11 1980-02-12 Mcdonnell Douglas Corporation Associative interconnection circuit
US4228528B2 (en) * 1979-02-09 1992-10-06 Memory with redundant rows and columns
US4374411A (en) * 1980-02-14 1983-02-15 Hayes Microcomputer Products, Inc. Relocatable read only memory
DE3015992A1 (de) * 1980-04-25 1981-11-05 Ibm Deutschland Gmbh, 7000 Stuttgart Programmierbare logische anordnung
US4365318A (en) * 1980-09-15 1982-12-21 International Business Machines Corp. Two speed recirculating memory system using partially good components
US4450524A (en) * 1981-09-23 1984-05-22 Rca Corporation Single chip microcomputer with external decoder and memory and internal logic for disabling the ROM and relocating the RAM
US4461001A (en) * 1982-03-29 1984-07-17 International Business Machines Corporation Deterministic permutation algorithm
US4489403A (en) * 1982-05-24 1984-12-18 International Business Machines Corporation Fault alignment control system and circuits
US4485471A (en) * 1982-06-01 1984-11-27 International Business Machines Corporation Method of memory reconfiguration for fault tolerant memory
US4483001A (en) * 1982-06-16 1984-11-13 International Business Machines Corporation Online realignment of memory faults
US4488298A (en) * 1982-06-16 1984-12-11 International Business Machines Corporation Multi-bit error scattering arrangement to provide fault tolerant semiconductor static memories
US4479214A (en) * 1982-06-16 1984-10-23 International Business Machines Corporation System for updating error map of fault tolerant memory
US4453248A (en) * 1982-06-16 1984-06-05 International Business Machines Corporation Fault alignment exclusion method to prevent realignment of previously paired memory defects
US4506364A (en) * 1982-09-30 1985-03-19 International Business Machines Corporation Memory address permutation apparatus
US4719459A (en) * 1986-03-06 1988-01-12 Grumman Aerospace Corporation Signal distribution system switching module
US4922451A (en) * 1987-03-23 1990-05-01 International Business Machines Corporation Memory re-mapping in a microcomputer system
US5067105A (en) * 1987-11-16 1991-11-19 International Business Machines Corporation System and method for automatically configuring translation of logical addresses to a physical memory address in a computer memory system
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US7190617B1 (en) * 1989-04-13 2007-03-13 Sandisk Corporation Flash EEprom system
EP0935255A2 (en) 1989-04-13 1999-08-11 SanDisk Corporation Flash EEPROM system
US5051994A (en) * 1989-04-28 1991-09-24 International Business Machines Corporation Computer memory module
US5128941A (en) * 1989-12-20 1992-07-07 Bull Hn Information Systems Inc. Method of organizing a memory for fault tolerance
US4992984A (en) * 1989-12-28 1991-02-12 International Business Machines Corporation Memory module utilizing partially defective memory chips
US5105425A (en) * 1989-12-29 1992-04-14 Westinghouse Electric Corp. Adaptive or fault tolerant full wafer nonvolatile memory
US5134616A (en) * 1990-02-13 1992-07-28 International Business Machines Corporation Dynamic ram with on-chip ecc and optimized bit and word redundancy
US5644732A (en) * 1990-07-13 1997-07-01 Sun Microsystems, Inc. Method and apparatus for assigning addresses to a computer system's three dimensional packing arrangement
US5392288A (en) * 1991-02-08 1995-02-21 Quantum Corporation Addressing technique for a fault tolerant block-structured storage device
JP3059076B2 (ja) * 1995-06-19 2000-07-04 シャープ株式会社 不揮発性半導体記憶装置
US6119049A (en) * 1996-08-12 2000-09-12 Tandon Associates, Inc. Memory module assembly using partially defective chips
US5857069A (en) * 1996-12-30 1999-01-05 Lucent Technologies Inc. Technique for recovering defective memory
US5923682A (en) * 1997-01-29 1999-07-13 Micron Technology, Inc. Error correction chip for memory applications
US6332183B1 (en) 1998-03-05 2001-12-18 Micron Technology, Inc. Method for recovery of useful areas of partially defective synchronous memory components
US6314527B1 (en) 1998-03-05 2001-11-06 Micron Technology, Inc. Recovery of useful areas of partially defective synchronous memory components
US6381707B1 (en) * 1998-04-28 2002-04-30 Micron Technology, Inc. System for decoding addresses for a defective memory array
US6381708B1 (en) 1998-04-28 2002-04-30 Micron Technology, Inc. Method for decoding addresses for a defective memory array
US6496876B1 (en) 1998-12-21 2002-12-17 Micron Technology, Inc. System and method for storing a tag to identify a functional storage location in a memory device
US6578157B1 (en) 2000-03-06 2003-06-10 Micron Technology, Inc. Method and apparatus for recovery of useful areas of partially defective direct rambus rimm components
US7269765B1 (en) 2000-04-13 2007-09-11 Micron Technology, Inc. Method and apparatus for storing failing part locations in a module
US6567290B2 (en) * 2000-07-05 2003-05-20 Mosaic Systems, Inc. High-speed low-power semiconductor memory architecture
US6675319B2 (en) * 2000-12-27 2004-01-06 Han-Ping Chen Memory access and data control
US6678836B2 (en) 2001-01-19 2004-01-13 Honeywell International, Inc. Simple fault tolerance for memory

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1249926B (de) * 1961-08-08 1967-09-14 Radio Corporation of America New York, NY (V St A) Einrichtung zum Umadressieren fehlerhafter Speicherstellen eines beliebig zuganglichen Hauptspeichers in einer Datenverarbeitungsanlage
US3222653A (en) * 1961-09-18 1965-12-07 Ibm Memory system for using a memory despite the presence of defective bits therein
US3245049A (en) * 1963-12-24 1966-04-05 Ibm Means for correcting bad memory bits by bit address storage
US3348197A (en) * 1964-04-09 1967-10-17 Gen Electric Self-repairing digital computer circuitry employing adaptive techniques
US3402399A (en) * 1964-12-16 1968-09-17 Gen Electric Word-organized associative cryotron memory
US3422402A (en) * 1965-12-29 1969-01-14 Ibm Memory systems for using storage devices containing defective bits
US3444526A (en) * 1966-06-08 1969-05-13 Ibm Storage system using a storage device having defective storage locations
US3434116A (en) * 1966-06-15 1969-03-18 Ibm Scheme for circumventing bad memory cells
NL149927B (nl) * 1968-02-19 1976-06-15 Philips Nv Woordgeorganiseerd geheugen.
US3659275A (en) * 1970-06-08 1972-04-25 Cogar Corp Memory correction redundancy system

Also Published As

Publication number Publication date
NL180886B (nl) 1986-12-01
SE391056B (sv) 1977-01-31
JPS4859738A (it) 1973-08-22
CA988220A (en) 1976-04-27
NL180886C (nl) 1987-05-04
JPS5145213B2 (it) 1976-12-02
FR2160391A2 (it) 1973-06-29
NL7215001A (it) 1973-05-17
US3781826A (en) 1973-12-25
FR2160391B2 (it) 1976-04-09

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