DE2335333B1 - Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-Technik - Google Patents
Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-TechnikInfo
- Publication number
- DE2335333B1 DE2335333B1 DE2335333A DE2335333A DE2335333B1 DE 2335333 B1 DE2335333 B1 DE 2335333B1 DE 2335333 A DE2335333 A DE 2335333A DE 2335333 A DE2335333 A DE 2335333A DE 2335333 B1 DE2335333 B1 DE 2335333B1
- Authority
- DE
- Germany
- Prior art keywords
- type
- layer
- areas
- field effect
- effect transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005669 field effect Effects 0.000 title claims description 38
- 238000000034 method Methods 0.000 title claims description 29
- 230000000295 complement effect Effects 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 35
- 238000009792 diffusion process Methods 0.000 claims description 27
- 239000002800 charge carrier Substances 0.000 claims description 23
- 239000012212 insulator Substances 0.000 claims description 18
- 238000005468 ion implantation Methods 0.000 claims description 14
- 230000000873 masking effect Effects 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 39
- 238000005530 etching Methods 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 239000011241 protective layer Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000004091 panning Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
- H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/147—Silicides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2335333A DE2335333B1 (de) | 1973-07-11 | 1973-07-11 | Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-Technik |
| GB2412474A GB1436975A (en) | 1973-07-11 | 1974-05-31 | Semiconductor arrangements |
| FR7423282A FR2237317B1 (enExample) | 1973-07-11 | 1974-07-04 | |
| IT24853/74A IT1015709B (it) | 1973-07-11 | 1974-07-05 | Procedimento per fabbricare un dispositivo con transistori a ef fetto di campo con la tecnologia mos a canali complementari |
| LU70489A LU70489A1 (enExample) | 1973-07-11 | 1974-07-09 | |
| US05/487,153 US3933529A (en) | 1973-07-11 | 1974-07-10 | Process for the production of a pair of complementary field effect transistors |
| JP49079726A JPS5039882A (enExample) | 1973-07-11 | 1974-07-11 | |
| BE146468A BE817544A (fr) | 1973-07-11 | 1974-07-11 | Procede pour fabriquer un dispositif comportant des transistors a effet de champ realises suivant la technique a mos complementaires |
| NL7409396A NL7409396A (nl) | 1973-07-11 | 1974-07-11 | Werkwijze voor de vervaardiging van een in- richting met veldeffekttransistors in comple- mentaire mos-techniek. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2335333A DE2335333B1 (de) | 1973-07-11 | 1973-07-11 | Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-Technik |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2335333B1 true DE2335333B1 (de) | 1975-01-16 |
Family
ID=5886601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2335333A Withdrawn DE2335333B1 (de) | 1973-07-11 | 1973-07-11 | Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-Technik |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3933529A (enExample) |
| JP (1) | JPS5039882A (enExample) |
| BE (1) | BE817544A (enExample) |
| DE (1) | DE2335333B1 (enExample) |
| FR (1) | FR2237317B1 (enExample) |
| GB (1) | GB1436975A (enExample) |
| IT (1) | IT1015709B (enExample) |
| LU (1) | LU70489A1 (enExample) |
| NL (1) | NL7409396A (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5132266U (enExample) * | 1974-08-30 | 1976-03-09 | ||
| US4002513A (en) * | 1975-02-25 | 1977-01-11 | General Electric Company | Bucket-brigade delay line having reduced parasitic capacitances and method for making the same |
| US4045810A (en) * | 1975-02-25 | 1977-08-30 | General Electric Company | Bucket-brigade delay line having reduced parasitic capacitances |
| US4027382A (en) * | 1975-07-23 | 1977-06-07 | Texas Instruments Incorporated | Silicon gate CCD structure |
| US4035906A (en) * | 1975-07-23 | 1977-07-19 | Texas Instruments Incorporated | Silicon gate CCD structure |
| US4050965A (en) * | 1975-10-21 | 1977-09-27 | The United States Of America As Represented By The Secretary Of The Air Force | Simultaneous fabrication of CMOS transistors and bipolar devices |
| US4069074A (en) * | 1976-01-07 | 1978-01-17 | Styapas Styapono Yanushonis | Method of manufacturing semiconductor devices |
| US4062699A (en) * | 1976-02-20 | 1977-12-13 | Western Digital Corporation | Method for fabricating diffusion self-aligned short channel MOS device |
| US4078947A (en) * | 1976-08-05 | 1978-03-14 | International Business Machines Corporation | Method for forming a narrow channel length MOS field effect transistor |
| NL7612883A (nl) * | 1976-11-19 | 1978-05-23 | Philips Nv | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. |
| US4097314A (en) * | 1976-12-30 | 1978-06-27 | Rca Corp. | Method of making a sapphire gate transistor |
| US4119992A (en) * | 1977-04-28 | 1978-10-10 | Rca Corp. | Integrated circuit structure and method for making same |
| US4145233A (en) * | 1978-05-26 | 1979-03-20 | Ncr Corporation | Method for making narrow channel FET by masking and ion-implantation |
| JPS5574172A (en) * | 1978-11-27 | 1980-06-04 | Mitsubishi Electric Corp | Interpolation type mos transistor |
| US4252574A (en) * | 1979-11-09 | 1981-02-24 | Rca Corporation | Low leakage N-channel SOS transistors and method of making them |
| JPS5683073A (en) * | 1979-12-11 | 1981-07-07 | Toshiba Corp | Semiconductor device |
| US4399605A (en) * | 1982-02-26 | 1983-08-23 | International Business Machines Corporation | Method of making dense complementary transistors |
| JPS5978557A (ja) * | 1982-10-27 | 1984-05-07 | Toshiba Corp | 相補型ｍｏｓ半導体装置の製造方法 |
| JPH0745209B2 (ja) * | 1986-03-03 | 1995-05-17 | 株式会社ブリヂストン | 空気入りタイヤの製造方法 |
| JPH0298968A (ja) * | 1988-10-06 | 1990-04-11 | Agency Of Ind Science & Technol | Ｍｏｓ型半導体装置 |
| US5151374A (en) * | 1991-07-24 | 1992-09-29 | Industrial Technology Research Institute | Method of forming a thin film field effect transistor having a drain channel junction that is spaced from the gate electrode |
| US6617644B1 (en) | 1998-11-09 | 2003-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7141821B1 (en) * | 1998-11-10 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an impurity gradient in the impurity regions and method of manufacture |
| US6518594B1 (en) * | 1998-11-16 | 2003-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor devices |
| US6909114B1 (en) | 1998-11-17 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having LDD regions |
| US6501098B2 (en) * | 1998-11-25 | 2002-12-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
| US6365917B1 (en) * | 1998-11-25 | 2002-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6277679B1 (en) | 1998-11-25 | 2001-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing thin film transistor |
| US6469317B1 (en) | 1998-12-18 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| EP3488471B1 (en) * | 2016-07-25 | 2024-09-11 | BOE Technology Group Co., Ltd. | Method of fabricating polycrystalline silicon thin film transistor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3436817A (en) * | 1967-02-13 | 1969-04-08 | Us Air Force | Method of making fringing field controlled thin film active device |
| NL6813833A (enExample) * | 1968-09-27 | 1970-04-01 | ||
| US3745072A (en) * | 1970-04-07 | 1973-07-10 | Rca Corp | Semiconductor device fabrication |
| US3749614A (en) * | 1970-09-14 | 1973-07-31 | Rca Corp | Fabrication of semiconductor devices |
| US3728591A (en) * | 1971-09-03 | 1973-04-17 | Rca Corp | Gate protective device for insulated gate field-effect transistors |
| US3739273A (en) * | 1971-11-02 | 1973-06-12 | Us Army | Spectrum analyzer |
| US3846194A (en) * | 1973-01-05 | 1974-11-05 | Inselek Inc | Process for producing lightly doped p and n-type regions of silicon on an insulating substrate |
-
1973
- 1973-07-11 DE DE2335333A patent/DE2335333B1/de not_active Withdrawn
-
1974
- 1974-05-31 GB GB2412474A patent/GB1436975A/en not_active Expired
- 1974-07-04 FR FR7423282A patent/FR2237317B1/fr not_active Expired
- 1974-07-05 IT IT24853/74A patent/IT1015709B/it active
- 1974-07-09 LU LU70489A patent/LU70489A1/xx unknown
- 1974-07-10 US US05/487,153 patent/US3933529A/en not_active Expired - Lifetime
- 1974-07-11 NL NL7409396A patent/NL7409396A/xx unknown
- 1974-07-11 BE BE146468A patent/BE817544A/xx unknown
- 1974-07-11 JP JP49079726A patent/JPS5039882A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT1015709B (it) | 1977-05-20 |
| LU70489A1 (enExample) | 1974-11-28 |
| FR2237317B1 (enExample) | 1978-11-24 |
| FR2237317A1 (enExample) | 1975-02-07 |
| NL7409396A (nl) | 1975-01-14 |
| GB1436975A (en) | 1976-05-26 |
| BE817544A (fr) | 1974-11-04 |
| JPS5039882A (enExample) | 1975-04-12 |
| US3933529A (en) | 1976-01-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BHJ | Nonpayment of the annual fee |