NL7409396A - Werkwijze voor de vervaardiging van een in- richting met veldeffekttransistors in comple- mentaire mos-techniek. - Google Patents

Werkwijze voor de vervaardiging van een in- richting met veldeffekttransistors in comple- mentaire mos-techniek.

Info

Publication number
NL7409396A
NL7409396A NL7409396A NL7409396A NL7409396A NL 7409396 A NL7409396 A NL 7409396A NL 7409396 A NL7409396 A NL 7409396A NL 7409396 A NL7409396 A NL 7409396A NL 7409396 A NL7409396 A NL 7409396A
Authority
NL
Netherlands
Prior art keywords
manufacture
complete
field effect
effect transistors
mos technology
Prior art date
Application number
NL7409396A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NL7409396A publication Critical patent/NL7409396A/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/147Silicides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NL7409396A 1973-07-11 1974-07-11 Werkwijze voor de vervaardiging van een in- richting met veldeffekttransistors in comple- mentaire mos-techniek. NL7409396A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2335333A DE2335333B1 (de) 1973-07-11 1973-07-11 Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-Technik

Publications (1)

Publication Number Publication Date
NL7409396A true NL7409396A (nl) 1975-01-14

Family

ID=5886601

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7409396A NL7409396A (nl) 1973-07-11 1974-07-11 Werkwijze voor de vervaardiging van een in- richting met veldeffekttransistors in comple- mentaire mos-techniek.

Country Status (9)

Country Link
US (1) US3933529A (nl)
JP (1) JPS5039882A (nl)
BE (1) BE817544A (nl)
DE (1) DE2335333B1 (nl)
FR (1) FR2237317B1 (nl)
GB (1) GB1436975A (nl)
IT (1) IT1015709B (nl)
LU (1) LU70489A1 (nl)
NL (1) NL7409396A (nl)

Families Citing this family (30)

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Publication number Priority date Publication date Assignee Title
JPS5132266U (nl) * 1974-08-30 1976-03-09
US4002513A (en) * 1975-02-25 1977-01-11 General Electric Company Bucket-brigade delay line having reduced parasitic capacitances and method for making the same
US4045810A (en) * 1975-02-25 1977-08-30 General Electric Company Bucket-brigade delay line having reduced parasitic capacitances
US4027382A (en) * 1975-07-23 1977-06-07 Texas Instruments Incorporated Silicon gate CCD structure
US4035906A (en) * 1975-07-23 1977-07-19 Texas Instruments Incorporated Silicon gate CCD structure
US4050965A (en) * 1975-10-21 1977-09-27 The United States Of America As Represented By The Secretary Of The Air Force Simultaneous fabrication of CMOS transistors and bipolar devices
US4069074A (en) * 1976-01-07 1978-01-17 Styapas Styapono Yanushonis Method of manufacturing semiconductor devices
US4062699A (en) * 1976-02-20 1977-12-13 Western Digital Corporation Method for fabricating diffusion self-aligned short channel MOS device
US4078947A (en) * 1976-08-05 1978-03-14 International Business Machines Corporation Method for forming a narrow channel length MOS field effect transistor
NL7612883A (nl) * 1976-11-19 1978-05-23 Philips Nv Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan.
US4097314A (en) * 1976-12-30 1978-06-27 Rca Corp. Method of making a sapphire gate transistor
US4119992A (en) * 1977-04-28 1978-10-10 Rca Corp. Integrated circuit structure and method for making same
US4145233A (en) * 1978-05-26 1979-03-20 Ncr Corporation Method for making narrow channel FET by masking and ion-implantation
JPS5574172A (en) * 1978-11-27 1980-06-04 Mitsubishi Electric Corp Interpolation type mos transistor
US4252574A (en) * 1979-11-09 1981-02-24 Rca Corporation Low leakage N-channel SOS transistors and method of making them
JPS5683073A (en) * 1979-12-11 1981-07-07 Toshiba Corp Semiconductor device
US4399605A (en) * 1982-02-26 1983-08-23 International Business Machines Corporation Method of making dense complementary transistors
JPS5978557A (ja) * 1982-10-27 1984-05-07 Toshiba Corp 相補型mos半導体装置の製造方法
JPH0745209B2 (ja) * 1986-03-03 1995-05-17 株式会社ブリヂストン 空気入りタイヤの製造方法
JPH0298968A (ja) * 1988-10-06 1990-04-11 Agency Of Ind Science & Technol Mos型半導体装置
US5151374A (en) * 1991-07-24 1992-09-29 Industrial Technology Research Institute Method of forming a thin film field effect transistor having a drain channel junction that is spaced from the gate electrode
US6617644B1 (en) 1998-11-09 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7141821B1 (en) * 1998-11-10 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity gradient in the impurity regions and method of manufacture
US6518594B1 (en) * 1998-11-16 2003-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devices
US6909114B1 (en) * 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
US6277679B1 (en) 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
US6365917B1 (en) * 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6501098B2 (en) 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
WO2018018356A1 (en) * 2016-07-25 2018-02-01 Boe Technology Group Co., Ltd. Polycrystalline silicon thin film transistor and method of fabricating the same, and display apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436817A (en) * 1967-02-13 1969-04-08 Us Air Force Method of making fringing field controlled thin film active device
NL6813833A (nl) * 1968-09-27 1970-04-01
US3745072A (en) * 1970-04-07 1973-07-10 Rca Corp Semiconductor device fabrication
US3749614A (en) * 1970-09-14 1973-07-31 Rca Corp Fabrication of semiconductor devices
US3728591A (en) * 1971-09-03 1973-04-17 Rca Corp Gate protective device for insulated gate field-effect transistors
US3739273A (en) * 1971-11-02 1973-06-12 Us Army Spectrum analyzer
US3846194A (en) * 1973-01-05 1974-11-05 Inselek Inc Process for producing lightly doped p and n-type regions of silicon on an insulating substrate

Also Published As

Publication number Publication date
LU70489A1 (nl) 1974-11-28
IT1015709B (it) 1977-05-20
FR2237317B1 (nl) 1978-11-24
BE817544A (fr) 1974-11-04
GB1436975A (en) 1976-05-26
US3933529A (en) 1976-01-20
FR2237317A1 (nl) 1975-02-07
JPS5039882A (nl) 1975-04-12
DE2335333B1 (de) 1975-01-16

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