NL7413266A - Werkwijze met planar-diffusie voor de vervaar- diging van een monolytisch geintegreerde vaste-stof-schakeling. - Google Patents

Werkwijze met planar-diffusie voor de vervaar- diging van een monolytisch geintegreerde vaste-stof-schakeling.

Info

Publication number
NL7413266A
NL7413266A NL7413266A NL7413266A NL7413266A NL 7413266 A NL7413266 A NL 7413266A NL 7413266 A NL7413266 A NL 7413266A NL 7413266 A NL7413266 A NL 7413266A NL 7413266 A NL7413266 A NL 7413266A
Authority
NL
Netherlands
Prior art keywords
manufacture
integrated solid
solid circuit
planar diffusion
monolytically
Prior art date
Application number
NL7413266A
Other languages
English (en)
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of NL7413266A publication Critical patent/NL7413266A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
NL7413266A 1973-10-17 1974-10-09 Werkwijze met planar-diffusie voor de vervaar- diging van een monolytisch geintegreerde vaste-stof-schakeling. NL7413266A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732351985 DE2351985A1 (de) 1973-10-17 1973-10-17 Planardiffusionsverfahren zum herstellen einer monolithisch integrierten festkoerperschaltung

Publications (1)

Publication Number Publication Date
NL7413266A true NL7413266A (nl) 1975-04-21

Family

ID=5895613

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7413266A NL7413266A (nl) 1973-10-17 1974-10-09 Werkwijze met planar-diffusie voor de vervaar- diging van een monolytisch geintegreerde vaste-stof-schakeling.

Country Status (7)

Country Link
US (1) US3956035A (nl)
JP (1) JPS50106592A (nl)
DE (1) DE2351985A1 (nl)
FR (1) FR2248613B1 (nl)
GB (1) GB1483801A (nl)
IT (1) IT1022944B (nl)
NL (1) NL7413266A (nl)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136281A (en) * 1978-04-14 1979-10-23 Toko Inc Semiconductor device and method of fabricating same
JPS56126960A (en) * 1980-03-11 1981-10-05 Nec Corp Manufacture of semiconductor device
JPS56129338A (en) * 1980-03-14 1981-10-09 Nec Corp Semiconductor device
JPS5750473A (en) * 1980-09-11 1982-03-24 Nec Corp Semiconductor integrated circuit device
NL8104862A (nl) * 1981-10-28 1983-05-16 Philips Nv Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan.
US4442591A (en) * 1982-02-01 1984-04-17 Texas Instruments Incorporated High-voltage CMOS process
US4613885A (en) * 1982-02-01 1986-09-23 Texas Instruments Incorporated High-voltage CMOS process
EP0093304B1 (en) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Semiconductor ic and method of making the same
WO1984001053A1 (en) * 1982-08-26 1984-03-15 Mitsubishi Electric Corp Semiconductor device
JPS60194558A (ja) * 1984-03-16 1985-10-03 Hitachi Ltd 半導体装置の製造方法
US6005282A (en) * 1986-09-26 1999-12-21 Analog Devices, Inc. Integrated circuit with complementary isolated bipolar transistors
DE3725429A1 (de) * 1987-07-31 1989-02-09 Bosch Gmbh Robert Monolithisch integrierte schaltungsanordnung
IT1217322B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina
USRE38510E1 (en) * 1987-12-22 2004-05-04 Stmicroelectronics Srl Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip
IT1218230B (it) * 1988-04-28 1990-04-12 Sgs Thomson Microelectronics Procedimento per la formazione di un circuito integrato su un substrato di tipo n,comprendente transistori pnp e npn verticali e isolati fra loro
US4910160A (en) * 1989-06-06 1990-03-20 National Semiconductor Corporation High voltage complementary NPN/PNP process
EP0451423A1 (en) * 1990-04-10 1991-10-16 International Business Machines Corporation Vertical isolated-collector PNP transistor structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449643A (en) * 1966-09-09 1969-06-10 Hitachi Ltd Semiconductor integrated circuit device
FR1510057A (fr) * 1966-12-06 1968-01-19 Csf Transistors intégrés complémentaires npn et pnp à collecteurs isolés
FR1559607A (nl) * 1967-06-30 1969-03-14
FR1559608A (nl) * 1967-06-30 1969-03-14
FR1559611A (nl) * 1967-06-30 1969-03-14
US3622842A (en) * 1969-12-29 1971-11-23 Ibm Semiconductor device having high-switching speed and method of making

Also Published As

Publication number Publication date
FR2248613A1 (nl) 1975-05-16
FR2248613B1 (nl) 1978-12-08
JPS50106592A (nl) 1975-08-22
GB1483801A (en) 1977-08-24
US3956035A (en) 1976-05-11
IT1022944B (it) 1978-04-20
DE2351985A1 (de) 1975-04-30

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Legal Events

Date Code Title Description
BV The patent application has lapsed