DE2302264A1 - Dicken-oxidierungsprozess zur verbesserung der metallablagerung und der stabilitaet von halbleitereinrichtungen - Google Patents

Dicken-oxidierungsprozess zur verbesserung der metallablagerung und der stabilitaet von halbleitereinrichtungen

Info

Publication number
DE2302264A1
DE2302264A1 DE2302264A DE2302264A DE2302264A1 DE 2302264 A1 DE2302264 A1 DE 2302264A1 DE 2302264 A DE2302264 A DE 2302264A DE 2302264 A DE2302264 A DE 2302264A DE 2302264 A1 DE2302264 A1 DE 2302264A1
Authority
DE
Germany
Prior art keywords
layer
dielectric
dielectric layer
layers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2302264A
Other languages
German (de)
English (en)
Inventor
Frederick Benjamin Jenne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
North American Rockwell Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North American Rockwell Corp filed Critical North American Rockwell Corp
Publication of DE2302264A1 publication Critical patent/DE2302264A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
DE2302264A 1972-04-05 1973-01-18 Dicken-oxidierungsprozess zur verbesserung der metallablagerung und der stabilitaet von halbleitereinrichtungen Pending DE2302264A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24128472A 1972-04-05 1972-04-05

Publications (1)

Publication Number Publication Date
DE2302264A1 true DE2302264A1 (de) 1973-10-25

Family

ID=22910046

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2302264A Pending DE2302264A1 (de) 1972-04-05 1973-01-18 Dicken-oxidierungsprozess zur verbesserung der metallablagerung und der stabilitaet von halbleitereinrichtungen

Country Status (7)

Country Link
JP (1) JPS4910673A (enExample)
CA (1) CA959383A (enExample)
DE (1) DE2302264A1 (enExample)
FR (1) FR2178859B3 (enExample)
GB (1) GB1361357A (enExample)
IT (1) IT976934B (enExample)
NL (1) NL7303610A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113307224A (zh) * 2021-05-24 2021-08-27 上海芯物科技有限公司 一种旋转结构的制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128755A (en) * 1974-09-04 1976-03-11 Nippon Electric Co Handotaisochi no seizohoho
JPH03198327A (ja) * 1989-12-26 1991-08-29 Fujitsu Ltd 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113307224A (zh) * 2021-05-24 2021-08-27 上海芯物科技有限公司 一种旋转结构的制备方法

Also Published As

Publication number Publication date
GB1361357A (en) 1974-07-24
FR2178859A1 (enExample) 1973-11-16
CA959383A (en) 1974-12-17
JPS4910673A (enExample) 1974-01-30
IT976934B (it) 1974-09-10
FR2178859B3 (enExample) 1976-01-30
NL7303610A (enExample) 1973-10-09

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Legal Events

Date Code Title Description
OHA Expiration of time for request for examination