GB1361357A - Production of semiconductor devices - Google Patents

Production of semiconductor devices

Info

Publication number
GB1361357A
GB1361357A GB5703772A GB5703772A GB1361357A GB 1361357 A GB1361357 A GB 1361357A GB 5703772 A GB5703772 A GB 5703772A GB 5703772 A GB5703772 A GB 5703772A GB 1361357 A GB1361357 A GB 1361357A
Authority
GB
United Kingdom
Prior art keywords
etched
layer
masked
substrate
expose
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5703772A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
North American Rockwell Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North American Rockwell Corp filed Critical North American Rockwell Corp
Publication of GB1361357A publication Critical patent/GB1361357A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials

Landscapes

  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Electrodes Of Semiconductors (AREA)
GB5703772A 1972-04-05 1972-12-11 Production of semiconductor devices Expired GB1361357A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24128472A 1972-04-05 1972-04-05

Publications (1)

Publication Number Publication Date
GB1361357A true GB1361357A (en) 1974-07-24

Family

ID=22910046

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5703772A Expired GB1361357A (en) 1972-04-05 1972-12-11 Production of semiconductor devices

Country Status (7)

Country Link
JP (1) JPS4910673A (enExample)
CA (1) CA959383A (enExample)
DE (1) DE2302264A1 (enExample)
FR (1) FR2178859B3 (enExample)
GB (1) GB1361357A (enExample)
IT (1) IT976934B (enExample)
NL (1) NL7303610A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0435187A3 (en) * 1989-12-26 1993-01-20 Fujitsu Limited Method of fabricating a semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128755A (en) * 1974-09-04 1976-03-11 Nippon Electric Co Handotaisochi no seizohoho
CN113307224B (zh) * 2021-05-24 2024-09-17 上海芯物科技有限公司 一种旋转结构的制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0435187A3 (en) * 1989-12-26 1993-01-20 Fujitsu Limited Method of fabricating a semiconductor device

Also Published As

Publication number Publication date
FR2178859A1 (enExample) 1973-11-16
NL7303610A (enExample) 1973-10-09
FR2178859B3 (enExample) 1976-01-30
JPS4910673A (enExample) 1974-01-30
IT976934B (it) 1974-09-10
DE2302264A1 (de) 1973-10-25
CA959383A (en) 1974-12-17

Similar Documents

Publication Publication Date Title
GB1444386A (en) Integrated circuit fabrication processes
GB1219986A (en) Improvements in or relating to the production of semiconductor bodies
GB1037519A (en) Electrical circuits
GB1381602A (en) Integrated circuit structure and method for making integrated circuit structure
US3745647A (en) Fabrication of semiconductor devices
US4131909A (en) Semiconductor integrated circuit isolated through dielectric material and a method for manufacturing the same
US4035829A (en) Semiconductor device and method of electrically isolating circuit components thereon
GB1505105A (en) Polycrystalline silicon resistive device for integrated circuits and method for making same
GB1413058A (en) Semoconductor devices
GB1422033A (en) Method of manufacturing a semiconductor device
GB1266243A (enExample)
GB1520718A (en) Field effect trasistors
GB1245116A (en) Insulated gate field effect transistors
GB1253294A (en) Improvements relating to polycrystalline films
GB1361357A (en) Production of semiconductor devices
JPS6430272A (en) Thin film transistor
JP2653092B2 (ja) 相補型薄膜トランジスタ及びその製造方法
GB1425864A (en) Monolithic semiconductor arrangements
JPS57191539A (en) Semiconductor ion sensor
CA1040320A (en) Depletion isolated semiconductor on insulator structures
GB1260544A (en) Method for manufacturing semiconductor device
JPS5764927A (en) Manufacture of semiconductor device
GB1495377A (en) Method of manufacturing a charge transfer device
JPS6428962A (en) Semiconductor device and manufacture thereof
JPS52117079A (en) Preparation of semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee