DE2264067A1 - Speicherschaltung - Google Patents
SpeicherschaltungInfo
- Publication number
- DE2264067A1 DE2264067A1 DE2264067A DE2264067A DE2264067A1 DE 2264067 A1 DE2264067 A1 DE 2264067A1 DE 2264067 A DE2264067 A DE 2264067A DE 2264067 A DE2264067 A DE 2264067A DE 2264067 A1 DE2264067 A1 DE 2264067A1
- Authority
- DE
- Germany
- Prior art keywords
- fet
- mis
- memory
- column
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000011159 matrix material Substances 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 5
- QZZYPHBVOQMBAT-JTQLQIEISA-N (2s)-2-amino-3-[4-(2-fluoroethoxy)phenyl]propanoic acid Chemical compound OC(=O)[C@@H](N)CC1=CC=C(OCCF)C=C1 QZZYPHBVOQMBAT-JTQLQIEISA-N 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 241001191009 Gymnomyza Species 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HLXGRHNZZSMNRX-UHFFFAOYSA-M sodium;3-(n-ethyl-3,5-dimethylanilino)-2-hydroxypropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC(C)=CC(C)=C1 HLXGRHNZZSMNRX-UHFFFAOYSA-M 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP133572A JPS568438B2 (enrdf_load_stackoverflow) | 1971-12-29 | 1971-12-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2264067A1 true DE2264067A1 (de) | 1973-07-05 |
Family
ID=11498613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2264067A Ceased DE2264067A1 (de) | 1971-12-29 | 1972-12-29 | Speicherschaltung |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS568438B2 (enrdf_load_stackoverflow) |
| CA (1) | CA986223A (enrdf_load_stackoverflow) |
| DE (1) | DE2264067A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1419970A (enrdf_load_stackoverflow) |
| NL (1) | NL7217793A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50134739A (enrdf_load_stackoverflow) * | 1974-04-15 | 1975-10-25 | ||
| JPS5443634A (en) * | 1977-09-13 | 1979-04-06 | Nippon Telegr & Teleph Corp <Ntt> | Memory erasing method |
| EP2323164B1 (en) * | 2000-08-14 | 2015-11-25 | SanDisk 3D LLC | Multilevel memory array and method for making same |
-
1971
- 1971-12-29 JP JP133572A patent/JPS568438B2/ja not_active Expired
-
1972
- 1972-12-28 GB GB5989872A patent/GB1419970A/en not_active Expired
- 1972-12-28 CA CA160,103A patent/CA986223A/en not_active Expired
- 1972-12-29 NL NL7217793A patent/NL7217793A/xx not_active Application Discontinuation
- 1972-12-29 DE DE2264067A patent/DE2264067A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4874128A (enrdf_load_stackoverflow) | 1973-10-05 |
| NL7217793A (enrdf_load_stackoverflow) | 1973-07-03 |
| JPS568438B2 (enrdf_load_stackoverflow) | 1981-02-24 |
| CA986223A (en) | 1976-03-23 |
| GB1419970A (en) | 1975-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8131 | Rejection |