JPS568438B2 - - Google Patents

Info

Publication number
JPS568438B2
JPS568438B2 JP133572A JP133572A JPS568438B2 JP S568438 B2 JPS568438 B2 JP S568438B2 JP 133572 A JP133572 A JP 133572A JP 133572 A JP133572 A JP 133572A JP S568438 B2 JPS568438 B2 JP S568438B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP133572A
Other versions
JPS4874128A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP133572A priority Critical patent/JPS568438B2/ja
Priority to CA160,103A priority patent/CA986223A/en
Priority to GB5989872A priority patent/GB1419970A/en
Priority to NL7217793A priority patent/NL7217793A/xx
Priority to DE19722264067 priority patent/DE2264067A1/de
Publication of JPS4874128A publication Critical patent/JPS4874128A/ja
Publication of JPS568438B2 publication Critical patent/JPS568438B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP133572A 1971-12-29 1971-12-29 Expired JPS568438B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP133572A JPS568438B2 (ja) 1971-12-29 1971-12-29
CA160,103A CA986223A (en) 1971-12-29 1972-12-28 Memory device
GB5989872A GB1419970A (en) 1971-12-29 1972-12-28 Field effect transistor memory circuits
NL7217793A NL7217793A (ja) 1971-12-29 1972-12-29
DE19722264067 DE2264067A1 (de) 1971-12-29 1972-12-29 Speicherschaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP133572A JPS568438B2 (ja) 1971-12-29 1971-12-29

Publications (2)

Publication Number Publication Date
JPS4874128A JPS4874128A (ja) 1973-10-05
JPS568438B2 true JPS568438B2 (ja) 1981-02-24

Family

ID=11498613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP133572A Expired JPS568438B2 (ja) 1971-12-29 1971-12-29

Country Status (5)

Country Link
JP (1) JPS568438B2 (ja)
CA (1) CA986223A (ja)
DE (1) DE2264067A1 (ja)
GB (1) GB1419970A (ja)
NL (1) NL7217793A (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134739A (ja) * 1974-04-15 1975-10-25
JPS5443634A (en) * 1977-09-13 1979-04-06 Nippon Telegr & Teleph Corp <Ntt> Memory erasing method
EP1312120A1 (en) 2000-08-14 2003-05-21 Matrix Semiconductor, Inc. Dense arrays and charge storage devices, and methods for making same

Also Published As

Publication number Publication date
JPS4874128A (ja) 1973-10-05
GB1419970A (en) 1975-12-31
DE2264067A1 (de) 1973-07-05
CA986223A (en) 1976-03-23
NL7217793A (ja) 1973-07-03

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